Geometries, stabilities, and electronic properties of different-sized ZrSin (n=1–16) clusters: A density-functional investigation

Unveiling the electronic structures and ligation effect of the superatom-polymeric zirconium oxide clusters: a computational study

Discovering the non-noble ZrO cluster as an analog of the noble metal catalyst Pd is of significance toward designing functional materials with fine-tuned properties using the superatom concept. The effect of gradually assembling the ZrO superatomic unit on the electronic structures and chemical bonding of larger ZrO-polymeric clusters, however, is unclear. Herein, by using density functional theory (DFT) calculations, the lowest-energy structures and low-lying isomers of the (ZrO)n-/0 (n = 2-5) clusters were optimized, in which every O atom in these clusters tends to connect its adjacent two Zr atoms forming metal oxygen bridge bonds. Insights into the electronic characteristics of these clusters were obtained by analyzing their molecular orbitals (MOs) and density of states (DOS). More importantly, our studies on the CO (electron acceptor) and PH3 (electron donor) ligated Zr3O3 clusters unveil that the ligation process can substantially alter the electronic properties of the clusters by tuning the HOMO and LUMO states, which may have potential applications in photovoltaics. Strikingly, the successive attachment of PH3 on Zr3O3 dramatically lowers the adiabatic ionization potential (AIP) of the ligated clusters, resulting in the formation of stable superalkali clusters with large HOMO-LUMO gaps. Furthermore, the potential of constructing the superalkali Zr3O3(PH3)5 based 1-D cluster assembled material was also examined.

Study on Structural Evolution, Thermochemistry and Electron Affinity of Neutral, Mono- and Di-Anionic Zirconium-Doped Silicon Clusters ZrSin0/-/2- (n = 6-16)

We have carried out a global search of systematic isomers for the lowest energy of neutral and Zintl anionic Zr-doped Si clusters ZrSi_n^0/-/2- (n = 6–16) by employing the ABCluster global search method combined with the mPW2PLYP double-hybrid density functional. In terms of the evaluated energies, adiabatic electron affinities, vertical detachment energies, and agreement between simulated and experimental photoelectron spectroscopy, the true global minimal structures are confirmed. The results reveal that structural evolution patterns for neutral ZrSi_n clusters prefer the attaching type (n = 6–9) to the half-cage motif (n = 10–13), and finally to a Zr-encapsulated configuration with a Zr atom centered in a Si cage (n = 14–16). For Zintl mono- and di-anionic ZrSi_n^-/2-, their growth patterns adopt the attaching configuration (n = 6–11) to encapsulated shape (n = 12–16). The further analyses of stability and chemical bonding make it known that two extra electrons not only perfect the structure of ZrSi₁₅ but also improve its chemical and thermodynamic stability, making it the most suitable building block for novel multi-functional nanomaterials.

Bond dissociation energies of TiSi, ZrSi, HfSi, VSi, NbSi, and TaSi

Predissociation thresholds have been observed in the resonant two-photon ionization spectra of TiSi, ZrSi, HfSi, VSi, NbSi, and TaSi. It is argued that because of the high density of electronic states at the ground separated atom limit in these molecules, the predissociation threshold in each case corresponds to the thermochemical bond dissociation energy. The resulting bond dissociation energies are D₀(TiSi) = 2.201(3) eV, D₀(ZrSi) = 2.950(3) eV, D₀(HfSi) = 2.871(3) eV, D₀(VSi) = 2.234(3) eV, D₀(NbSi) = 3.080(3) eV, and D₀(TaSi) = 2.999(3) eV. The enthalpies of formation were also calculated as Δ_f,0KH°(TiSi(g)) = 705(19) kJ mol^-1, Δ_f,0KH°(ZrSi(g)) = 770(12) kJ mol^-1, Δ_f,0KH°(HfSi(g)) = 787(10) kJ mol^-1, Δ_f,0KH°(VSi(g)) = 743(11) kJ mol^-1, Δ_f,0KH°(NbSi(g)) = 879(11) kJ mol^-1, and Δ_f,0KH°(TaSi(g)) = 938(8) kJ mol^-1. Using thermochemical cycles, ionization energies of IE(TiSi) = 6.49(17) eV and IE(VSi) = 6.61(15) eV and bond dissociation energies of the ZrSi^- and NbSi^- anions, D₀(Zr-Si^-) ≤ 3.149(15) eV, D₀(Zr^--Si) ≤ 4.108(20) eV, D₀(Nb-Si^-) ≤ 3.525(31) eV, and D₀(Nb^--Si) ≤ 4.017(39) eV, have also been obtained. Calculations on the possible low-lying electronic states of each species are also reported.

Structural determination of niobium-doped silicon clusters by far-infrared spectroscopy and theory

The structures of niobium doped silicon cluster cations are determined by a combination of infrared multiple photon dissociation spectroscopy and density functional theory calculations.

Structures, Stabilities, and Electronic Properties of Small-Sized Zr2Si n (n=1–11) Clusters: A Density Functional Study

Ab initio methods based on density functional theory at B3LYP level have been applied in investigating the equilibrium geometries, growth patterns, relative stabilities, and electronic properties of Zr2-doped Si n clusters. The optimisation results shown that the lowest-energy configurations for Zr2Si n clusters do not keep the corresponding silicon framework unchanged, which reflects that the doped Zr atoms dramatically affect the most stable structures of the Si n clusters. By analysing the relative stabilities, it is found that the doping of zirconium atoms reduces the chemical stabilities of silicon host. The Zr2Si4 and Zr2Si7 clusters are the magic numbers. The natural population and natural electronic configuration analyses indicated that the Zr atoms possess positive charge for n=1–6 and negative charge for n=7–11. In addition, the chemical hardness, chemical potential, infrared, and Raman spectra are also discussed.

Probing the valence orbitals of transition metal-silicon diatomic anions: ZrSi, NbSi, MoSi, PdSi and WSi

Evolution of electronic properties and the nature of bonding of the 4d-transition metal silicides (ZrSi, NbSi, MoSi and PdSi) are discussed, revealing interesting trends in the transition metal-silicon interactions across the period. The electronic properties of select transition metal silicide diatomics have been determined by anion photoelectron imaging spectroscopy and theoretical methods. The electron binding energy spectra and photoelectron angular distributions obtained by 2.33 eV (532 nm) photons have revealed the distinct features of these diatomics. The theoretical calculations were performed at the density functional theory (DFT) level using the unrestricted B3LYP hybrid functional and at the ab initio unrestricted coupled cluster singles and doubles (triplets) (UCCSD(T)) methods to assign the ground electronic states of the neutral and anionic diatomics. The excited electronic states were calculated by the DFT (TD-DFT)/UB3LYP method. We have observed that the valence molecular orbital configuration of the ZrSi and NbSi anions are significantly different from that of the MoSi and PdSi anions. By combining our experimental and theoretical results, we report that the composition of the highest occupied molecular orbitals shift from a majority of transition metal s- and d-orbital contribution in ZrSi and NbSi, to mainly silicon p-orbital contribution for MoSi and PdSi. We expect these observed atomic scale transition metal-silicon interactions to be of increasing importance with the miniaturization of devices approaching the sub-nanometer size regime.

DENSITY FUNCTIONAL THEORY STUDIES OF CHARGED, COPPER-DOPED, SMALL SILICON CLUSTERS, ${\rm CuSi}_{n}^{+}/{\rm CuSi}_{n}^{-}$ (n = 1–7)

The structures and stabilities of charged, copper-doped, small silicon clusters [Formula: see text] (n = 1–7) have been systematically investigated using the density functional theory method at the B3LYP/6-311+G* level. For comparison, the geometries of neutral CuSi n clusters were also optimized at the same level, although most of them have been reported previously [see Xiao CY, Abraham A, Quinn R, Hagelberg F, Comparative study on the interaction of scandium and copper atoms with small silicon clusters, J Phys Chem A106:11380, 2002; Liu X, Zhao GF, Guo LJ, Wang XW, Zhang J, Jing Q, Luo YH, First-principle studies of the geometries and electronic properties of Cu m Si n (2 ≤ m + n ≤ 7) clusters, Chin Phys16:3359, 2007]. Our results for the ground state structures of neutral CuSi n clusters agree well with those of Liu et al. and Xiao et al. except for CuSi3 and CuSi7 . Removing or adding an electron greatly changes some ground state structures, i.e. for [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], and [Formula: see text]; others are almost unchanged, e.g. [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text]. The ground states of ionic [Formula: see text] are all singlet, except for the smaller CuSi- and [Formula: see text]. Based on the optimized geometries, various energetic properties, including binding energies, second-order difference energies, the highest occupied molecular orbit and the lowest unoccupied molecular orbital (HOMO–LUMO) energy gaps, ionization potential and electron affinities, were calculated for the most stable isomers of [Formula: see text]. All the results indicate that anionic [Formula: see text] and cationic [Formula: see text] clusters are relatively stable. The higher stability of the latter has been confirmed by Beck's observations.

Transition from exo- to endo- Cu absorption in CuSi(n) clusters: A Genetic Algorithms Density Functional Theory (DFT) Study

The characterization and prediction of the structures of metal silicon clusters is important for nanotechnology research because these clusters can be used as building blocks for nano devices, integrated circuits and solar cells. Several authors have postulated that there is a transition between exo to endo absorption of Cu in Si(n) clusters and showed that for n larger than 9 it is possible to find endohedral clusters. Unfortunately, no global searchers have confirmed this observation, which is based on local optimizations of plausible structures. Here we use parallel Genetic Algorithms (GA), as implemented in our MGAC software, directly coupled with DFT energy calculations to show that the global search of CuSi(n) cluster structures does not find endohedral clusters for n < 8 but finds them for n ≥ 10.

No quenching of magnetic moment for the GenCo (n=1-13) clusters: first-principles calculations

The authors predict that for the Ge(n)Co (n=1-13) clusters the magnetic moment does not quench, which is dark contrast to the previous results with transition-metal-doped Si(n) clusters. It may be due to the unpaired electrons of the Co atom in the clusters. For the ground state structures of the Ge(n)Co (n>or=9) clusters, the Co atom completely falls into the center of the Ge outer frame, forming metal-encapsulated Ge(n) cages. The doping of the Co atom enhances the stability of the host Ge(n) clusters. The Ge(10)Co cluster with the bicapped tetragonal antiprism structure is more stable than others, which agrees very well with the results of the experiment of the Co/Ge binary clusters by the laser vaporization.

Computational investigation of TiSin (n=2–15) clusters by the density-functional theory

The geometries, stabilities, and electronic properties of TiSin (n=2-15) clusters with different spin configurations have been systematically investigated by using density-functional theory approach at B3LYP/LanL2DZ level. According to the optimum TiSin clusters, the equilibrium site of Ti atom gradually moves from convex to surface, and to a concave site as the number of Si atom increases from 2 to 15. When n=12, the Ti atom in TiSi12 completely falls into the center of the Si outer frame, forming metal-encapsulated Si cages, which can be explained by using 16-electron rule. On the basis of the optimized geometries, various energetic properties are calculated for the most stable isomers of TiSin clusters, including the average binding energy, the highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gap, fragmentation energy, and the second-order difference of energy. It is found that at size n=6,8,12 the clusters are more stable than neighboring ones. According to the Mulliken charge population analysis, charges always transfer from Si atoms to Ti atom. Furthermore, the HOMO-LUMO gaps of the most stable TiSin clusters are usually smaller than those of Sin clusters.