Lower Rydberg series of methane: A combined coupled cluster linear response and molecular quantum defect orbital calculation

Electronic structure of the ground and excited states of neutral and charged silicon hydrides, SiHx0/+/-, x = 1-4

The ground and excited electronic states of the titled species are investigated with multi-reference configuration interaction and diffuse basis sets. We found that in addition to the valence orbitals, the inclusion of the 4s, 4p, and especially 3d orbitals (although with minimal population) of silicon in the active space of the reference complete active space self-consistent field wavefunction are necessary for the proper convergence of the calculations. We also demonstrate that the aug-cc-pVTZ basis set provides quite accurate results compared to both larger basis sets and basis set limit results at a lower computational cost. The excited states involve excitations within the 3s and 3p orbitals of silicon (especially for the mono- and di-hydrides), followed by excitations from the Si-H bonding orbitals to either silicon valence or Rydberg (4s, 4p) orbitals. The number of electronic states per energy unit decrease as we add hydrogen atoms, and the first excited state of SiH₄ is at 9.0 eV and leads to SiH₃ + H. All species have stable ground state structures with all hydrogen atoms bound to silicon, except for SiH₄⁺ and SiH₄^-. The former dissociates to SiH₂⁺ + H₂, while the latter loses an electron or can dissociate forming H₂ as well.

The electronic spectrum of SiH4: Jahn-Teller Rydberg series

The aim of the present theoretical work is to provide data necessary for a better understanding of the electronic spectrum of the silane molecule, which is affected by the Jahn-Teller effect. By selecting an adequate distorted C(2v) geometry of SiH(4), the three lower Koopmans ionization potentials are evaluated with the equation of motion coupled cluster of singles and doubles method. Vertical excitation energies for the different Rydberg series converging to the three Jahn-Teller components are inferred from ab initio coupled cluster linear response calculations. Absorption oscillator strengths for dipole-allowed electronic transitions are also determined with the molecular-adapted quantum defect orbital methodology. Predictions of new spectroscopic data on SiH(4) are reported.

Full configuration interaction calculation of the low lying valence and Rydberg states of BeH

The all-electron full configuration interaction (FCI) vertical excitation energies for some low lying valence and Rydberg excited states of BeH are presented in this article. A basis set of valence atomic natural orbitals has been augmented with a series of Rydberg orbitals that have been generated as centered onto the Be atom. The resulting basis set can be described as 4s2p1d/2s1p (Be/H) + 4s4p3d. It allows to calculate Rydberg states up to n= {3,4,5} of the s, p, and d series of Rydberg states. The FCI vertical ionization potential for the same basis set and geometry amounts to 8.298 eV. Other properties such as FCI electric dipole and quadrupole moments and FCI transition dipole and quadrupole moments have also been calculated. The results provide a set of benchmark values for energies, wave functions, properties, and transition properties for the five electron BeH molecule. Most of the states have large multiconfigurational character in spite of their essentially single excited nature and a number of them present an important Rydberg-valence mixing that is achieved through the mixed nature of the particle MO of the single excitations.

Excitation Energies and Photoabsorption Oscillator Strengths of the Rydberg Series in CF3Cl. A Linear Response and Quantum Defect Study

Vertical excitation energies of the CF(3)Cl molecule have been obtained from a response function approach with a CC reference function to determine absolute photoabsorption oscillator strengths in the molecular-adapted quantum defect orbital formalism (MQDO). The present work covers more highly excited Rydberg states than have been experimentally reported. Assessing of the reliability of the present calculations is provided through a comparative analysis between the results of the molecule and the Cl atom. This can be used to allow for predictions of the same type of properties in other analogous systems.

Photodissociation of methane: Exploring potential energy surfaces

The potential energy surface for the first excited singlet state (S(1)) of methane is explored using multireference singles and doubles configuration interaction calculations, employing a valence triple zeta basis set. A larger valence quadruple zeta basis is used to calculate the vertical excitation energy and dissociation energies. All stationary points found on the S(1) surface are saddle points and have imaginary frequencies for symmetry-breaking vibrations. By studying several two-dimensional cuts through the potential energy surfaces, it is argued that CH(4) in the S(1) state will distort to planar structures. Several conical intersection seams between the ground state surface S(0) and the S(1) surface have been identified at planar geometries. The conical intersections provide electronically nonadiabatic pathways towards products CH(3)((approximately)X (2)A"(2))+H, CH(2)((approximately)a (1)A(1))+H(2), or CH(2)((approximately)X (3)B(1))+H+H. The present results thereby make it plausible that the CH(3)((approximately)X (2)A"(2))+H and CH(2)((approximately)a (1)A(1))+H(2) channels are major dissociation channels, as has been observed experimentally.