Tomography experiment of an integrated circuit specimen using 3 MeV electrons in the transmission electron microscope

The influence of structure depth on image blurring of micrometres-thick specimens in MeV transmission electron imaging

This study investigates the influence of structure depth on image blurring of micrometres-thick films by experiment and simulation with a conventional transmission electron microscope (TEM). First, ultra-high-voltage electron microscope (ultra-HVEM) images of nanometer gold particles embedded in thick epoxy-resin films were acquired in the experiment and compared with simulated images. Then, variations of image blurring of gold particles at different depths were evaluated by calculating the particle diameter. The results showed that with a decrease in depth, image blurring increased. This depth-related property was more apparent for thicker specimens. Fortunately, larger particle depth involves less image blurring, even for a 10-μm-thick epoxy-resin film. The quality dependence on depth of a 3D reconstruction of particle structures in thick specimens was revealed by electron tomography. The evolution of image blurring with structure depth is determined mainly by multiple elastic scattering effects. Thick specimens of heavier materials produced more blurring due to a larger lateral spread of electrons after scattering from the structure. Nevertheless, increasing electron energy to 2MeV can reduce blurring and produce an acceptable image quality for thick specimens in the TEM.

Analysis of nonlinear intensity attenuation in bright-field TEM images for correct 3D reconstruction of the density in micron-sized materials

To obtain the correct tomographic reconstruction of micron-sized materials, the nonlinear intensity attenuation of bright-field transmission electron microscopy (BF-TEM) images was analyzed as a function of the sample thickness using a high-voltage electron microscope. The intensity attenuation was precisely measured relative to the projection thickness of carbon microcoils (CMCs) at acceleration voltages of 400-1000 kV using objective apertures (OAs) with radii of 2.1-28 nm(-1). The results show that the nonlinearity is strongly dependent on the OA size and the acceleration voltage. The influence of nonlinearity on tomographic reconstructions was also examined using a specially developed 360°-tilt sample holder. Sliced images of the reconstructed volumes indicated that an increase in the nonlinearity caused artificial fluctuations in the internal density of materials and inaccurate shapes of the objects in more significant cases. Conditions sufficient for reconstruction with the correct density have been estimated to be 0.67 of the minimum electron transmittance, and for reconstructions with correct shapes, 0.4. This information enables foreseeing the quality of the reconstruction from a single BF-TEM image prior to the tilt-series acquisition. As a result to demonstrate the appropriateness of these conditions, a CMC with a diameter of 3.7 µm was reconstructed successfully; i.e. not only the shape but also the internal density were correctly reproduced using electron tomography.

Electron tomographic resolution of microns-thick specimens in the ultrahigh voltage electron microscope

In this study, we determine the electron tomography (ET) resolution for microns-thick specimens by experiment in the ultra-high voltage electron microscope. A tilt series of projection images of a tilted 8μm thick epoxy-resin film are first acquired. Tomographic reconstructions are then calculated and the resolution is evaluated with the Fourier shell correlation method. The ET resolution of 32nm is achieved under the condition of 2MV accelerating voltage. We also demonstrate that some high tilt angle projections may be little useful for improving the final ET resolution because of the corresponding poor image qualities. These results are helpful to understand the possibility and limitation of ET applications in microns-thick specimens.

Formation and reduction of streak artefacts in electron tomography

We have analysed the formation of streak artefacts in the reconstruction based on the filtered back projection algorithm in electron tomography (ET) and accordingly applied an adaptive interpolation technique to artefact reduction. In the adaptive interpolation to recover the missing information, the edge positions in a projection curve were tracked to reduce the interpolation error. A simulation was used to demonstrate the effectiveness of the artefact reduction. Furthermore, image reconstruction of integrated circuit specimens in the ET experiments with the ultra-high voltage electron microscope show that the strong streak artefacts can be reduced effectively by our artefact reduction technique.

Three-dimensional measurement of line edge roughness in copper wires using electron tomography

Electrical interconnects in integrated circuits have shrunk to sizes in the range of 20-100 nm. Accurate measurements of the dimensions of these nanowires are essential for identifying the dominant electron scattering mechanisms affecting wire resistivity as they continue to shrink. We report a systematic study of the effect of line edge roughness on the apparent cross-sectional area of 90 nm Cu wires with a TaN/Ta barrier measured by conventional two-dimensional projection imaging and three-dimensional electron tomography. Discrepancies in area measurements due to the overlap of defects along the wire's length lead to a 5% difference in the resistivities predicted by the two methods. Tomography of thick cross sections is shown to give a more accurate representation of the original structure and allows more efficient sampling of the wire's cross-sectional area. The effect of roughness on measurements from projection images is minimized for cross-section thicknesses less than 50 nm, or approximately half the spatial frequency of the roughness variations along the length of the investigated wires.

Effect of sample structure on reconstruction quality in computed tomography

We have investigated the effect of a sample structure on reconstruction quality in computed tomography (CT). A power spectrum with respect to a projection angle is used to represent the sample structure. The condition for high quality reconstruction is then analyzed with the simulation and the electron tomography experiment based on an ultrahigh voltage electron microscope. The truncated terms in the power spectrum are suggested to be less than 10(-3) for high quality reconstruction. The effect of the sample structure is believed to be an important factor for high quality reconstruction of complex samples in various CT techniques.