Photoelectron spectroscopy of europium-silicon cluster anions, EuSin− (3⩽n⩽17)

Making Sense of the Growth Behavior of Ultra-High Magnetic Gd2-Doped Silicon Clusters

The growth behavior, stability, electronic and magnetic properties of the Gd₂Si_n^- (n = 3-12) clusters are reported, which are investigated using density functional theory calculations combined with the Saunders 'Kick' and the Artificial Bee Colony algorithm. The lowest-lying structures of Gd₂Si_n^- (n = 3-12) are all exohedral structures with two Gd atoms face-capping the Si_n frameworks. Results show that the pentagonal bipyramid (PB) shape is the basic framework for the nascent growth process of the present clusters, and forming the PB structure begins with n = 5. The Gd₂Si₅^- is the potential magic cluster due to significantly higher average binding energies and second order difference energies, which can also be further verified by localized orbital locator and adaptive natural density partitioning methods. Moreover, the localized f-electron can be observed by natural atomic orbital analysis, implying that these electrons are not affected by the pure silicon atoms and scarcely participate in bonding. Hence, the implantation of these elements into a silicon substrate could present a potential alternative strategy for designing and synthesizing rare earth magnetic silicon-based materials.

[M@Sn14-xSbx]q- (M = La, Ce, or U; x = 6-8; q = 3, 4): Interaction of 4f or 5f Metal Ions with 5p Metal Atoms in Intermetalloid Clusters

The impact of 4f metal ions Ln³⁺ (Ln = La or Ce) versus 5f metal ions Uⁿ⁺ (n = 3 or 4) on the compositions and distribution of 5p metal atoms in the cluster shells of endohedral species [M@Sn_14-xSb_x]^q- (M = La, Ce, or U; x = 6-8; q = 3, 4) was studied by means of combined experimental and quantum chemical investigations. While all known f-block metal ion-centered endohedral clusters possessed combinations of larger main group metal atoms so far (Sn/Bi or Pb/Bi), resulting in mixtures of 13- and 14-atom cages, the 14-atom cages reported herein comprise exclusively Sn and Sb atoms and therefore are challenged in accommodating the large 4f and 5f ions. We show that the clusters form in reactions of (Sn₂Sb₂)^2- anions with [Ln(C₅Me₄H)₃] or [U(C₅Me₄H)₃Cl], and that salts of [La@Sn₆Sb₈]^3-, [La@Sn₇Sb₇]^4-, [U@Sn₈Sb₆]^4-, and [U@Sn₇Sb₇]^3- can be isolated from them. The assignment of Sn versus Sb in the encapsulating cage follows a simple rule. Different central atoms cause only slight differences in this regard and with respect to distortions of the cluster shells. The reactions also yielded the salt of the new binary anion (Sn₄Sb₄)^2- that was recently predicted by quantum chemical studies.

Structures and electronic properties of VSin- (n = 14-20) clusters: a combined experimental and density functional theory study

We present a systematic study of the structures and electronic properties of vanadium-doped silicon cluster anions, VSi_n^- (n = 14-20), by combining photoelectron spectroscopy (PES) measurements and density functional theory (DFT) based theoretical calculations. High resolution PES of low temperature (10 K) clusters are acquired at a photon wavelength of 248 nm. Low-lying structures of VSi_14-20^- are obtained by a genetic algorithm based global minimum search code combined with DFT calculations. Excellent agreement is found between the measured PES and the simulated electron density of states of the putative ground-state structures. We conclude that clusters with sizes n = 14 and n = 15 prefer cage-like structures, with the encapsulated vanadium atom bonding with all silicon atoms, while a fullerene-like motif is more favorable for n ≥ 16. For the sizes n = 16 to 19, the structures consist of a V@Si₁₄ with two, three, four, and five Si atoms on the surface of the cage. For n = 20 the structure consists of a V@Si₁₅ with five Si atoms on the surface of the cage. VSi₁₄^- has the highest stability and stands out as a simultaneous closing of electronic and geometrical shells.

Electronic structure and bonding in endohedral Zintl clusters

Endohedral Zintl clusters-multi-metallic anionic molecules in which a d-block or f-block metal atom is enclosed by p-block (semi)metal atoms-are very topical in contemporary inorganic chemistry. Not only do they provide insight into the embryonic states of intermetallic compounds and show promise in catalytic applications, they also shed light on the nature of chemical bonding between metal atoms. Over the past two decades, a plethora of endohedral Zintl clusters have been synthesized, revealing a fascinating diversity of molecular architectures. Many different perspectives on the bonding in them have emerged in the literature, sometimes complementary and sometimes conflicting, and there has been no concerted effort to classify the entire family based on a small number of unifying principles. A closer look, however, reveals distinct patterns in structure and bonding that reflect the extent to which valence electrons are shared between the endohedral atom and the cluster shell. We show that there is a much more uniform relationship between the total valence electron count and the structure and bonding patterns of these clusters than previously anticipated. All of the p-block (semi)metal shells can be placed on a ladder of total valence electron count that ranges between 4n+2 (closo deltahedra), 5n (closed, three-bonded polyhedra) and 6n (crown-like structures). Although some structural isomerism can occur for a given electron count, the presence of a central metal cation imposes a preference for rather regular and approximately spherical structures which maximise electrostatic interactions between the metal and the shell. In cases where the endohedral metal has relatively accessible valence electrons (from the d or f shells), it can also contribute its valence electrons to the total electron count of the cluster shell, raising the effective electron count and often altering the structural preferences. The electronic situation in any given cluster is considered from different perspectives, some more physical and some more chemical, in a way that highlights the important point that, in the end, they explain the same situation. This article provides a unifying perspective of bonding that captures the structural diversity across this diverse family of multimetallic clusters.

Electronic States of CoSin-/0/+ (n = 1-3) Clusters from Density Matrix Renormalization Group-CASPT2 Calculations

Density matrix renormalization group-CASPT2 (DMRG-CASPT2), CASPT2, and density functional theory are employed to describe the complicated geometrical and electronic structures of CoSi_n^-/0/+ (n = 1-3) clusters. The active spaces of DMRG-CASPT2 are extended to 23 orbitals. The DMRG-CASPT2 method with such large active spaces is reasonable to provide highly accurate relative energies of the electronic states. The pure BP86, PBE, and TPSS functionals appear to be suitable to compute the relative energies of the electronic states of cobalt-doped silicon clusters. The leading configurations, bond distances, vibrational frequencies, normal modes, and relative energies of the electronic states are reported. The electron detachment energies of the removals of one electron from the anionic and neutral clusters are estimated. All six bands in the photoelectron spectrum of CoSi₃^- are interpreted based on the computed electron detachment energies and Franck-Condon factor simulations.

Study on the growth behavior and photoelectron spectroscopy of neodymium-doped silicon nanoclusters NdSin0/- (n = 8-20) with a double-hybrid density functional theory

Structural evolution, magnetic moment, and thermochemical and spectral properties of NdSi_n^0/- (n = 8-20) nanoclusters were studied. Optimized structures for NdSi_n demonstrated that the configuration with quintet ground state prefers Nd-substituted for a Si of the most stable Si_n + 1 (n = 8-11) structure to Nd-linked configuration with Si₉ tricapped trigonal prism subcluster (n = 12-19). Finally, the configuration prefers to Nd-encapsulated into Si cage framework (n = 20). For anion, the evolution at the quartet state prefers Nd-linked structure for n = 8-19 (excluded 9), and prefers Nd-encapsulated structure of n = 20. The spectral information including electron affinity, vertical detachment energy, and simulated photoelectron spectroscopy were also observed. The 4f electrons of Nd atom in NdSi_n with n = 8-10 hardly participate in bonding, but take part in remaining neutral clusters and all anionic NdSi_n^- clusters. The calculations of average bond energy, HOMO-LUMO gap, and chemical bonding analyses reveal that NdSi₂₀^- possesses perfect thermodynamic and ideal chemical stability, making it as the most appropriate constitutional units for novel multi-functional semiconductors.

Structural and electronic properties of exohedrally doped neutral silicon clusters LnSin (n = 5, 10; Ln = Sm, Eu, Yb)

Lanthanide-doped silicon clusters have been extensively studied in the fields of optoelectronics, magnetism and nanomaterials during the last decade. Herein, systematic structure searches for typical neutral clusters of lanthanide-doped silicon clusters LnSin (n = 5, 10; Ln = Sm, Eu, Yb) have been performed by means of density functional theory coupled with the "stochastic kicking" global search technique. It is found that the Ln atom in LnSin prefers to locate on the surface of Sin to form an exohedral structure, and this exohedral configuration may dominate the nascent structure of LnSin. The spin density and Mulliken population analyses indicate that LnSin clusters possess remarkable magnetic moments (except for YbSin), which are mainly supplied by the Ln 4f electrons (except for Yb). Density of states visually shows the significant spin polarization for open-shell structures of SmSin and EuSin. As for the YbSin (n = 5, 10) system, it has a closed-shell electronic structure with a large HOMO-LUMO gap of 2.72 eV. Bonding analysis, including localized orbital locator and electron density difference, shows that the Si-Si covalent interaction and Sm-Si electrostatic interaction are important for the structural stability of LnSin.

The stability, electronic, and magnetic properties of rare-earth doped silicon-based clusters

The rare-earth doped silicon-based clusters exhibit remarkable structural, physical, and chemical properties, which make them attractive candidates as building units in designing of cluster-based materials with special optical, electronic, and magnetic properties. The structural, stability, electronic, and magnetic properties of pure silicon Si_n + 1 (n = 1-9) and rare-earth doped clusters Si_nEu (n = 1-9) are investigated using the "stochastic kicking" (SK) global search technique combined with density functional theory (DFT) calculations. It was found that: 1) the ground state structures of pure silicon clusters tend to form compact structures rather than cages with the increase of cluster size; 2) the ground state structures for doped species were found to be additional or substitutional sites, and the rare-earth atoms tend to locate on the surface of the silicon clusters; 3) the average binding energy of the doped clusters increased gradually and exhibited the final phenomenon of saturation with the increase of clusters size. The average binding energy of doped clusters was slightly higher than that of pure silicon clusters of the same size, which indicated that the rare-earth atom encapsulated by silicon enhanced the stability of the silicon clusters to some degree; 4) the doped clusters have strong total magnetic moments, which mainly originated from the contribution of rare-earth atoms, whereas the contribution of silicon atoms were almost negligible. As the cluster size increased, the total magnetic moments of binary mixed clusters tended to be stable.

Structural evolution and electronic properties of CoSin− (n = 3–12) clusters: mass-selected anion photoelectron spectroscopy and quantum chemistry calculations

Experimental measurements and theoretical calculations show that CoSi₁₀⁻ has the highest vertical detachment energy among all the CoSi_n⁻ (n = 3–12) clusters, implying CoSi₁₀⁻ has special stability.

Cu20Si12: A Hollow Cage Constituted of a Copper Dodecahedron and a Silicon Icosahedron

A stable hollow copper silicide cage with Ih symmetry, Cu20Si12, constituted of a copper dodecahedron and a silicon icosahedron, was investigated using density functional theory. Molecular dynamics simulations show that Cu20Si12 retains its geometric topology up to an effective temperature of about 962 K. The molecule has a HOMO-LUMO gap of 1.099 eV, indicating its relatively high chemical stability. These frontier molecular orbitals show clear characteristics of hybridization between Si 3p and Cu 3d electrons. This proposed structure helps to extend the range of high-symmetry molecular polyhedral species. The hollow space within Cu20Si12 can be used to accommodate other atoms or molecules and emphasizes the benefit of studying endohedral fullerenes.

Probing the structural evolution of ruthenium doped germanium clusters: Photoelectron spectroscopy and density functional theory calculations

We present a combined experimental and theoretical study of ruthenium doped germanium clusters, RuGen(-) (n = 3-12), and their corresponding neutral species. Photoelectron spectra of RuGen(-) clusters are measured at 266 nm. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) are obtained. Unbiased CALYPSO structure searches confirm the low-lying structures of anionic and neutral ruthenium doped germanium clusters in the size range of 3 ≤ n ≤ 12. Subsequent geometry optimizations using density functional theory (DFT) at PW91/LANL2DZ level are carried out to determine the relative stability and electronic properties of ruthenium doped germanium clusters. It is found that most of the anionic and neutral clusters have very similar global features. Although the global minimum structures of the anionic and neutral clusters are different, their respective geometries are observed as the low-lying isomers in either case. In addition, for n > 8, the Ru atom in RuGen(-/0) clusters is absorbed endohedrally in the Ge cage. The theoretically predicted vertical and adiabatic detachment energies are in good agreement with the experimental measurements. The excellent agreement between DFT calculations and experiment enables a comprehensive evaluation of the geometrical and electronic structures of ruthenium doped germanium clusters.

Main Group Metal-Actinide Magnetic Coupling and Structural Response Upon U(4+) Inclusion Into Bi, Tl/Bi, or Pb/Bi Cages

The encapsulation of actinide ions in intermetalloid clusters has long been proposed but was never realized synthetically. We report the isolation and experimental, as well as quantum chemical, characterization of the uranium-centered clusters [U@Bi12](3-), [U@Tl2Bi11](3-), [U@Pb7Bi7](3-), and [U@Pb4Bi9](3-), upon reaction of (EE'Bi2)(2-) (E = Ga, Tl, E' = Bi; E = E' = Pb) and [U(C5Me4H)3] or [U(C5Me4H)3Cl] in 1,2-diaminoethane. For [U@Bi12](3-), magnetic susceptibility measurements rationalize an unprecedented antiferromagnetic coupling between a magnetic U(4+) site and a unique radical Bi12(7-) shell.

Structural assignment, and electronic and magnetic properties of lanthanide metal doped silicon heptamers Si7M0/− with M = Pr, Gd and Ho

The ground state geometries of neutral and anionic lanthanide-metal-doped silicon clusters Si₇M^0/− with M = Pr, Gd and Ho were determined by quantum chemical (DFT) computations and the previous experimental photoelectron spectra were assigned.

Geometries, stabilities and electronic properties of beryllium-silicon Be₂Si(n) clusters

The equilibrium geometries, growth patterns, stabilities, and electronic properties of bimetallic Be₂Si(n) (n = 1-11) clusters are systematically investigated at the B3LYP/6-311G(d) level of theory. Harmonic vibrational analysis has been performed to assure that the optimized geometries are stable. The optimized results suggest that the three-dimensional structures are observed for the most stable isomers of Be₂Si(n) clusters when n > 2. The calculated vertical ionization potential for the lowest-energy isomers are comparable to the experimental values of Si(n+2). According to the averaged binding energy, fragmentation energy, second-order energy difference and HOMO-LUMO gaps calculations, we identify that the Be₂Si₂ and Be₂Si₅ clusters are more stable, and Be atoms doping enhance the chemical reactivity of the Si n host. The natural population and natural electron configuration analyses indicate that the Be atoms possess positive charge at n = 1-5 but negative charge at n = 6-11. The chemical hardness of Be₂Si(n) clusters show three local maxima at n = 2, 5, and 9, whereas three local minima are found for the corresponding chemical potential, meaning these clusters are more stable than their neighboring cluster sizes.

A combined stochastic search and density functional theory study on the neutral and charged silicon-based clusters MSi6 (M = La, Ce, Yb and Lu)

Structures and simulated photoelectron spectra of MSi₆⁻ (M = La, Ce, Yb and Lu).

Structural identification of caged vanadium doped silicon clusters

The geometry of cationic silicon clusters doped with vanadium, Si(n)V(+) (n=12-16), is investigated by using infrared multiple photon dissociation of the corresponding rare gas complexes in combination with ab initio calculations. It is shown that the clusters are endohedral cages, and evidence is provided that Si(16)V(+) is a fluxional system with a symmetric Frank-Kasper geometry.