Substitution effects in elastic electron collisions with CH3X (X=F, Cl, Br, I) molecules

Experimental scaling of plane-Born cross sections and ab initio assignments for electron-impact excitation and dissociation of XF4 (X = C, Si, and Ge) molecules

Electron energy loss spectra of carbon tetrafluoride, silicon tetrafluoride, and germanium tetrafluoride molecules (CF₄, SiF₄, and GeF₄) have been measured for incident electron energies of 50-360 eV at 1.5°-15.5° and for 30 eV and 30° scattering angle, while sweeping the energy loss over the range 9.0-20.0 eV. Low-lying valence excited triplet and singlet states are investigated by quantum chemical ab initio calculations. The Rydberg series converging to the (lowest) ionisation energy limits of XF₄ (X = C, Si, Ge) are also identified and classified using the systematic behaviour according to the magnitude of the quantum defects. A generalized oscillator strength analysis is employed to derive oscillator strength f₀ value and the apparent Born integral cross sections from the corresponding differential cross sections by using the Vriens formula for the optically allowed transitions. The f₀ value is compared with the optical oscillator strength of the photoabsorption, pseudo-photon measurements, and theoretical values. The binary-encounter and f-scaled Born cross sections of the most intense optically allowed transitions have been also derived from the excitation threshold to the high energy region where the Born approximation is valid. Potential energy curves were obtained along the XF₃ + F coordinate with two different basis sets to lend support on electron impact dissociation processes yielding radical formation. We found that in CF₄, the lowest-lying dissociative character is due to intramolecular conversion from Rydberg 3s to valence character (σ*(C-F)), whereas in SiF₄ and GeF₄, an antibonding behaviour prevails.

Electronic excitation of carbonyl sulphide (COS) by high-resolution vacuum ultraviolet photoabsorption and electron-impact spectroscopy in the energy region from 4 to 11 eV

The electronic state spectroscopy of carbonyl sulphide, COS, has been investigated using high resolution vacuum ultraviolet photoabsorption spectroscopy and electron energy loss spectroscopy in the energy range of 4.0-10.8 eV. The spectrum reveals several new features not previously reported in the literature. Vibronic structure has been observed, notably in the low energy absorption dipole forbidden band assigned to the (4π←3π) ((1)Δ←(1)Σ(+)) transition, with a new weak transition assigned to ((1)Σ(-)←(1)Σ(+)) reported here for the first time. The absolute optical oscillator strengths are determined for ground state to (1)Σ(+) and (1)Π transitions. Based on our recent measurements of differential cross sections for the optically allowed ((1)Σ(+) and (1)Π) transitions of COS by electron impact, the optical oscillator strength f0 value and integral cross sections (ICSs) are derived by applying a generalized oscillator strength analysis. Subsequently, ICSs predicted by the scaling are confirmed down to 60 eV in the intermediate energy region. The measured absolute photoabsorption cross sections have been used to calculate the photolysis lifetime of carbonyl sulphide in the upper stratosphere (20-50 km).

BF3 valence and Rydberg states as probed by electron energy loss spectroscopy and ab initio calculations

In this contribution we probe BF3 low-lying excited singlet states measured at 100 eV, 2.8° scattering angle and triplet states at 40 eV, 40° scattering angle, while sweeping the energy loss over the range 10.0-20.0 eV. The electronic state spectroscopy has been investigated and the assignments supported by quantum chemical calculations. This provides the first comprehensive investigation of all singlet and triplet excited electronic states of boron trifluoride up to the first ionization potential. A generalized oscillator strength analysis is employed to derive oscillator strength f0 value and integral cross sections (ICSs) from the corresponding differential cross sections (DCSs). The f0 value is compared with the optical oscillator strength (OOS) from photoabsorption, and the unscaled Born ICSs are then compared with relevant energy and binary-encounter and f-scaled Born cross section (BEf-scaling) results determined as a part of this investigation. The lowest n members of the Rydberg series have been assigned as converging to the lowest ionization energy limits of boron trifluoride and classified according to the magnitude of the quantum defects (δ).

Elastic differential cross sections for C₄F₆ isomers in the 1.5-200 eV energy electron impact: similarities with six fluorine containing molecules and evidence of F-atom like scattering

We report absolute elastic differential cross sections for electron interactions with the C4F6 isomers, hexafluoro-1,3-butadiene (1,3-C4F6), hexafluoro-2-butyne (2-C4F6), and hexafluorocyclobutene (c-C4F6). The incident electron energy range is 1.5-200 eV, and the scattered electron angular range for the differential measurements varies from 15° to 150°. In all cases the absolute scale of the differential cross section was set using the relative flow technique, with helium as the reference species. Atomic-like behaviour in these scattering systems is shown here for the first time, and is further investigated by comparing the elastic cross sections for the C4F6 isomers with other fluorinated molecules, such as SF6 and CnF6 (n = 2, 3, and 6). We note that for all the six-F containing molecules, the scattering process for electron energies above 30 eV is indistinguishable. Finally, we report results for calculations of elastic differential cross sections for electron scattering from each of these isomers, within an optical potential method and assuming a screened corrected independent atom representation. The level of agreement between these calculations and our measurements is found to be quite remarkable in all cases.