Communications: Ab initio second-order nonlinear optics in solids

Long-range corrected exchange-correlation kernels to describe excitons in second-harmonic generation

We investigate the role of excitons in second-harmonic generation (SHG) through the long-range corrected (LRC) exchange-correlation kernels: empirical LRC, Bootstrap, and jellium-with-a-gap model. We calculate the macroscopic second-order frequency-dependent susceptibility χ⁽²⁾. We also present the frequency-dependent macroscopic dielectric function ϵ_M which is a fundamental quantity in the theoretical derivation of χ⁽²⁾. We assess the role of the long-range kernels in describing excitons in materials with different symmetry types: cubic zincblende, hexagonal wurtzite, and tetragonal symmetry. Our studies indicate that excitons play an important role in χ⁽²⁾ bringing a strong enhancement of the SHG signal. Moreover, we found that the SHG enhancement follows a simple trend determined by the magnitude of the long-range corrected α-parameter. This trend is material dependent.

Zn-VI quasiparticle gaps and optical spectra from many-body calculations

The electronic band structures of hexagonal ZnO and cubic ZnS, ZnSe, and ZnTe compounds are determined within hybrid-density-functional theory and quasiparticle calculations. It is found that the band-edge energies calculated on the [Formula: see text] (Zn chalcogenides) or GW (ZnO) level of theory agree well with experiment, while fully self-consistent QSGW calculations are required for the correct description of the Zn 3d bands. The quasiparticle band structures are used to calculate the linear response and second-harmonic-generation (SHG) spectra of the Zn-VI compounds. Excitonic effects in the optical absorption are accounted for within the Bethe-Salpeter approach. The calculated spectra are discussed in the context of previous experimental data and present SHG measurements for ZnO.

Investigation of mid-infrared second harmonic generation in strained germanium waveguides

In this paper we present a detailed theoretical investigation of second harmonic generation in strained germanium waveguides operating at the mid infrared pump wavelength of 4 μm. The effective second order susceptibility has been estimated through a multiphysics approach considering the residual stress of the SiN_x cladding film. Furthermore, general physical features have been investigated by means of a comparative analysis of SHG performance as a function of input pump power, linear and nonlinear phase mismatching, effective recombination carrier lifetime, and temperature, taking into account both continuous and pulsed regimes. Finally, periodically poled germanium devices have been explored with the aim to improve the SHG efficiency. In the same operative conditions, efficiencies of 0.6% and 0.0018% have been obtained in poled and not-poled waveguides, respectively.

Modeling of strain-induced Pockels effect in Silicon

We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail because of its attractive properties for integrated optics. The outcome of this analysis is a linear relation between the second order susceptibility tensor and the strain gradient tensor, depending generically on fifteen coefficients. The proposed model greatly simplifies the description of the electro-optic effect in strained silicon waveguides, providing a powerful and effective tool for design and optimization of optical devices.

Defects and strain enhancements of second-harmonic generation in Si/Ge superlattices

Starting from experimental findings and interface growth problems in Si/Ge superlattices, we have investigated through ab initio methods the concurrent and competitive behavior of strain and defects in the second-harmonic generation process. Interpreting the second-harmonic intensities as a function of the different nature and percentage of defects together with the strain induced at the interface between Si and Ge, we found a way to tune and enhance the second-harmonic generation response of these systems.

Linear and nonlinear optical response of LiNbO3 calculated from first principles

The dielectric function and second-harmonic generation spectrum of ferroelectric LiNbO(3) are calculated from first principles. The calculations are based on the electronic structure obtained within density functional theory. The use of the GW approach to account for quasiparticle effects and the subsequent solution of the Bethe-Salpeter equation lead to a dielectric function in excellent agreement with measured data. The second harmonic generation spectrum calculated within the independent (quasi) particle approximation predicts strong nonlinear coefficients for photon energies above about 1.5 eV. The comparison with measured data suggests that the inclusion of self-energy effects in the nonlinear response improves the agreement with experiment.

Second-harmonic generation in silicon waveguides strained by silicon nitride

Silicon photonics meets the electronics requirement of increased speed and bandwidth with on-chip optical networks. All-optical data management requires nonlinear silicon photonics. In silicon only third-order optical nonlinearities are present owing to its crystalline inversion symmetry. Introducing a second-order nonlinearity into silicon photonics by proper material engineering would be highly desirable. It would enable devices for wideband wavelength conversion operating at relatively low optical powers. Here we show that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer. We carried out second-harmonic-generation experiments and first-principle calculations, which both yield large values of strain-induced bulk second-order nonlinear susceptibility, up to 40 pm V(-1) at 2,300 nm. We envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 μm.