The far ultraviolet and HeI photoelectron spectra of alkyl and fluorine substituted silane derivatives

On the rearrangement and dissociation mechanism of SiH4+ in its triply-degenerate ground state

An ab initio molecular orbital study has been performed to explore the structural rearrangement and dissociation of SiH4+ radical cation at the X̃2T2 ground electronic state. All stationary points located on the lowest adiabatic sheet of Jahn-Teller (JT) split X̃2T2 state are fully optimized and characterized by performing harmonic vibrational frequency calculations. The structural rearrangement is predicted to start with JT distortions involving the doubly-degenerate (e) and triply-degenerate (t2) modes. The e mode reduces the initial Td symmetry of the SiH4+ ground state to a D2d saddle point, which eventually dissociates into the SiH3+(2A1) + H products via C3v local minimum. In turn, an e-type bending of αH-Si-H yields the SiH2+(2A1) + H2 products through the first C3v local minimum and then the Cs(2A') global minimum. In the alternative pathway, the t2 mode distorts the initial Td symmetry into a loosely bound C3v local minimum, which further dissociates into the SiH3+(2A1) + H asymptote via totally symmetric Si-H stretching mode, and SiH2+(2A1) + H2 products via H-Si-H bending (e) mode through the Cs(2A') global minimum. It is further predicted that the Cs global minimum interconverts equivalent structures via a C2v transition structure. In addition, the two dissociation products are found to be connected by a second C2v transition structure.

Shock wave and modelling study of the unimolecular dissociation of Si(CH3)2F2: an access to spectroscopic and kinetic properties of SiF2

The thermal dissociation of Si(CH₃)₂F₂ was studied in shock waves between 1400 and 1900 K. UV absorption-time profiles of its dissociation products SiF₂ and CH₃ were monitored. The reaction proceeds as a unimolecular process not far from the high-pressure limit. Comparing modelled and experimental results, an asymmetric representation of the falloff curves was shown to be most realistic. Modelled limiting high-pressure rate constants agreed well with the experimental data. The UV absorption spectrum of SiF₂ was shown to be quasi-continuous, with a maximum near 222 nm and a wavelength-integrated absorption cross section of 4.3 (±1) × 10^-23 cm³ (between 195 and 255 nm, base e), the latter being consistent with radiative lifetimes from the literature. Experiments over the range 1900-3200 K showed that SiF₂ was not consumed by a simple bond fission SiF₂ →SiF + F, but by a bimolecular reaction SiF₂ + SiF₂ → SiF + SiF₃ (rate constant in the range 10¹¹-10¹² cm³ mol^-1 s^-1), followed by the unimolecular dissociation SiF₃ → SiF₂ + F such that the reaction becomes catalyzed by the reactant SiF₂. The analogy to a pathway CF₂ + CF₂ → CF + CF₃, followed by CF₃ → CF₂ + F, in high-temperature fluorocarbon chemistry is stressed. Besides the high-temperature absorption cross sections of SiF₂, analogous data for SiF are also reported.

GW100: Comparison of Methods and Accuracy of Results Obtained with the WEST Code

The reproducibility of calculations carried out within many-body perturbation theory at the G₀ W₀ level is assessed for 100 closed shell molecules and compared to that of density functional theory. We consider vertical ionization potentials (VIP) and electron affinities (VEA) obtained with five different codes: BerkeleyGW, FHI-aims, TURBOMOLE, VASP, and WEST. We review the approximations and parameters that control the accuracy of G₀ W₀ results in each code, and we discuss in detail the effect of extrapolation techniques for the parameters entering the WEST code. Differences between the VIP and VEA computed with the various codes are within ∼60 and ∼120 meV, respectively, which is up to four times larger than in the case of the best results obtained with DFT codes. Vertical ionization potentials are validated against experiment and CCSD(T) quantum chemistry results showing a mean absolute relative error of ∼4% for data obtained with WEST. Our analysis of the differences between localized orbitals and plane-wave implementations points out molecules containing Cu, I, Ga, and Xe as major sources of discrepancies, which call for a re-evaluation of the pseudopotentials used for these systems in G₀ W₀ calculations.

Metal-free photochemical silylations and transfer hydrogenations of benzenoid hydrocarbons and graphene

The first hydrogenation step of benzene, which is endergonic in the electronic ground state (S₀), becomes exergonic in the first triplet state (T₁). This is in line with Baird's rule, which tells that benzene is antiaromatic and destabilized in its T₁ state and also in its first singlet excited state (S₁), opposite to S₀, where it is aromatic and remarkably unreactive. Here we utilized this feature to show that benzene and several polycyclic aromatic hydrocarbons (PAHs) to various extents undergo metal-free photochemical (hydro)silylations and transfer-hydrogenations at mild conditions, with the highest yield for naphthalene (photosilylation: 21%). Quantum chemical computations reveal that T₁-state benzene is excellent at H-atom abstraction, while cyclooctatetraene, aromatic in the T₁ and S₁ states according to Baird's rule, is unreactive. Remarkably, also CVD-graphene on SiO₂ is efficiently transfer-photohydrogenated using formic acid/water mixtures together with white light or solar irradiation under metal-free conditions.

Baird's rules say that the first triplet state of benzene displays antiaromatic character. Here, the authors exploit this to show that aromatic molecules can undergo rapid transfer hydrogenation or silylations without the need for metal catalysts when photochemcially excited into this state.

Hydrogen elimination from the dissociation of methyl-substituted silanes on tungsten and tantalum surfaces

The elimination of H2 from the dissociation of four methyl-substituted silane molecules, including monomethylsilane (MMS), dimethylsilane (DMS), trimethylsilane (TriMS), and tetramethylsilane (TMS), on a heated tungsten or tantalum filament surface has been studied using laser ionization mass spectrometry. Two complementary ionization methods, i.e., single photon ionization (SPI) using a vacuum ultraviolet wavelength at 118 nm (10.5 eV) and a dual ionization source incorporating both 10.5 eV SPI and laser-induced electron ionization, were employed to detect the production of H2. Examination of the intensity of the H2+ peak from the four molecules has shown that it increases with temperature until reaching a plateau at around 2000−2100 °C on both tungsten and tantalum filaments. These methyl-substituted silanes are dissociatively adsorbed on tungsten and tantalum surfaces by Si−H bond cleavage, and as the temperature is raised, by C−H bond rupture. Experiments with the isotopomers of MMS, DMS, and TriMS have shown that the formation of H2 follows the Langmuir−Hinshelwood mechanism where two adsorbed hydrogen atoms on metal surfaces recombine to produce H2. The determined activation energy (Ea) for H2 formation from MMS, DMS, and TriMS, in the range of 58.2−93.4 kJ mol−1, has been found to increase with the number of methyl substitutions in the precursor molecule. Comparison of these Ea values with the reported values of 51.1−78.8 kJ mol−1 for the methyl radical formation from the same three precursor molecules has led to the conclusion that the initial Si−H bond cleavage in the dissociative adsorption of MMS, DMS, and TriMS is the rate-limiting step for the formation of both H2 molecules and ·CH3 radicals.

Size effects on cation heats of formation. III. Methyl and ethyl substitutions in group IV XH₄, X = C, Si, Ge, Sn, Pb

The heats of formation of alkyl-substituted XH4 (X = C, Si, Ge, Sn, Pb) ΔfH(M(+)) = IEad(M) + ΔfH (M) molecular ions have often never been measured or are not known to better than 10 or 20 kJ/mol. The present study on these Main Group IV compounds adopts a graphical approach that relates cation heats of formation to cation size. A study of methyl substitution in XH4 is followed by a similar examination of heat of formation data on ethyl substitution in methane, silane, germane, stannane, and plumbane. The results provide tests of the validity of this graphical method as well as its use as a predictive tool for determining cation and neutral heats of formation. Suggestions are made of the need to investigate or reinvestigate the ionization energies and/or the heats of formation of several of the molecules studied. Results and conclusions are tabulated.

The electronic spectrum of SiH4: Jahn-Teller Rydberg series

The aim of the present theoretical work is to provide data necessary for a better understanding of the electronic spectrum of the silane molecule, which is affected by the Jahn-Teller effect. By selecting an adequate distorted C(2v) geometry of SiH(4), the three lower Koopmans ionization potentials are evaluated with the equation of motion coupled cluster of singles and doubles method. Vertical excitation energies for the different Rydberg series converging to the three Jahn-Teller components are inferred from ab initio coupled cluster linear response calculations. Absorption oscillator strengths for dipole-allowed electronic transitions are also determined with the molecular-adapted quantum defect orbital methodology. Predictions of new spectroscopic data on SiH(4) are reported.

HREELS, STM, and STS study of CH3-terminated Si(111)-(1×1) surface

An ideally (1x1)-CH(3)(methyl)-terminated Si(111) surface was composed by Grignard reaction of photochlorinated Si(111) and the surface structure was for the first time confirmed by Auger electron spectroscopy, low energy electron diffraction, high-resolution electron energy loss spectroscopy (HREELS), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS). HREELS revealed the vibration modes associated to the CH(3)-group as well as the C-Si bond. STM discerned an adlattice with (1x1) periodicity on Si(111) composed of protrusions with internal features, covering all surface terraces. The surface structure was confirmed to be stable at temperatures below 600 K. STS showed that an occupied-state band exists at gap voltage of -1.57 eV, generated by the surface CH(3) adlattice. This CH(3):Si(111)-(1x1) adlayer with high stability and unique electronic property is prospective for applications such as nanoscale lithography and advanced electrochemistry.