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For: Lu Z, Schmidt MT, Podlesnik DV, Yu CF, Osgood RM. Ultraviolet‐light‐induced oxide formation on GaAs surfaces. J Chem Phys 1990. [DOI: 10.1063/1.459325] [Citation(s) in RCA: 31] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]  Open
Number Cited by Other Article(s)
1
Piggott AY, Lagoudakis KG, Sarmiento T, Bajcsy M, Shambat G, Vučković J. Photo-oxidative tuning of individual and coupled GaAs photonic crystal cavities. OPTICS EXPRESS 2014;22:15017-15023. [PMID: 24977595 DOI: 10.1364/oe.22.015017] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
2
Sexton JZ, Yi SI, Hale M, Kruse P, Demkov AA, Kummel AC. Displacement of surface arsenic atoms by insertion of oxygen atoms into As–Ga backbonds. J Chem Phys 2003. [DOI: 10.1063/1.1614209] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]  Open
3
Hale MJ, Yi SI, Sexton JZ, Kummel AC, Passlack M. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4). J Chem Phys 2003. [DOI: 10.1063/1.1601596] [Citation(s) in RCA: 133] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
4
Kruse P, McLean JG, Kummel AC. Chemically selective adsorption of molecular oxygen on GaAs(100)c(2×8). J Chem Phys 2000. [DOI: 10.1063/1.1315600] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
5
Huang HH, Zou Z, Jiang X, Chan WY, Xu GQ. Photodesorption and Photodissociation of OCS on GaAs(100). J Phys Chem B 1997. [DOI: 10.1021/jp971484x] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
6
Shi H, Cloutier P, Gamache J, Sanche L. Dynamics of low-energy-electron stimulated desorption of metastable particles from N2 condensed on Xe and Kr films. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:13830-13838. [PMID: 9983138 DOI: 10.1103/physrevb.53.13830] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Dai D, Balasubramanian K. Potential energy surfaces for the Ga2As + Cl etching reaction. Chem Phys Lett 1995. [DOI: 10.1016/s0009-2614(95)01248-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
8
Sanche L, Bass AD, Parenteau L, Gortel ZW. Measuring diffusion in thin films by dissociative electron attachment: O2 in Kr. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:5540-5548. [PMID: 10009070 DOI: 10.1103/physrevb.48.5540] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Dai D, Balasubramanian K. Geometries and potential energies of electronic states of GaX2 and GaX3 (X=Cl, Br, and I). J Chem Phys 1993. [DOI: 10.1063/1.465807] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
10
Rowntree P, Sambe H, Parenteau L, Sanche L. Formation of anionic excitations in the rare-gas solids and their coupling to dissociative states of adsorbed molecules. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:4537-4554. [PMID: 10006602 DOI: 10.1103/physrevb.47.4537] [Citation(s) in RCA: 63] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
11
Liberman V, Haase G, Osgood RM. Ultraviolet photon‐induced interaction of Cl2with GaAs(110): Dissociation by means of charge transfer. J Chem Phys 1992. [DOI: 10.1063/1.462143] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]  Open
12
Balasubramanian K, Tao JX, Liao DW. Model calculations for halogen‐etching of GaAs and InSb. Potential‐energy surfaces for GaAs+Cl, GaAs+Br, InSb+Cl, and InSb+Br reactions. J Chem Phys 1991. [DOI: 10.1063/1.461706] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]  Open
13
Energy and charge transfer at rare-gas surfaces via substrate excitation and core-excited resonances. Chem Phys Lett 1991. [DOI: 10.1016/0009-2614(91)90111-l] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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