Photoionization mass spectrometric studies of the transient species Si2Hn (n=2–5)

Thermochemistry of Tungsten-3p Elements for Density Functional Theory, Caveat Lector!

There are two primary foci in this research on WE (E = Si, P, and S) bonds: prediction of their bond dissociation enthalpies (BDEs), including σ- and π-bond energy components, and assessing the uncertainty of these BDE predictions for levels of theory commonly used in the literature. The internal standards for computational accuracy include metal-element bond lengths (mean absolute error = 1.8 ± 1.2%), main group homolog BDEs versus higher levels of ab initio theory (W1U and G4 BDEs, R² = 0.98), and DLPNO-CCSD(T)/def2-QZVPP calculations for metal-ligand BDEs (R² = 0.88). The W═Si first π-bond is underreported for density functional theory (DFT)/MP2 methods versus DLPNO-CCSD(T), while the latter shows negligible strength for the W;Si second π-bond, consistent with the literature. This research highlights clear issues with the underlying assumptions required for the use of perturbation theory methods for the fragments derived from W-P homolysis. The difficulties associated with modeling the metal thermochemistry with DFT (and MP2) levels of theory are manifest in the broad standard deviations observed. However, the average BDEs found using 48 popular DFT and MP2 levels of theory are reliable, 10.8 ± 6.8% mean absolute error (with W-P removed) versus DLPNO-CCSD(T), with the caveat that the individual basis set/pseudopotential/valence basis set combination can vary wildly. Analysis of the absolute error percentages with respect to the level of theory indicates little benefit to going higher on Jacob's Ladder, as simpler methods have lower error versus high-level ab initio techniques such as G4 and DLPNO-CCSD(T).

Formation and IR spectrum of monobridged Si2H4 isolated in solid argon

The infrared (IR) spectrum of monobridged Si₂H₄ (denoted as mbr-Si₂H₄) isolated in solid Ar was recorded, and a set of lines (in the major matrix site) observed at 858.3 cm^-1, 971.5 cm^-1, 999.2 cm^-1, 1572.7 cm^-1, 2017.7 cm^-1, 2150.4 cm^-1, and 2158.4 cm^-1 were characterized. The species was produced by the electron bombardment of an Ar matrix sample containing a small proportion of SiH₄ during matrix deposition. Upon photolysis of the matrix samples using 365 nm and 160 nm light, the content of mbr-Si₂H₄ increased. The band positions, relative intensity ratios, and D-isotopic shift ratios of the observed IR features are generally in good agreement with those predicted by the B3LYP/aug-cc-pVTZ method. In addition, the photochemistry of the observed products was discussed.

Systematic First-Principles Configuration-Interaction Calculations of Linear Optical Absorption Spectra in Silicon Hydrides: Si2H2n (n = 1-3)

We have performed first-principles electron-correlated calculations employing large basis sets to optimize the geometries and to compute linear optical absorption spectra of various low-lying conformers of silicon hydrides: Si₂H_2n, n = 1, 2, 3. The geometry optimization for various isomers was carried out at the coupled-cluster singles-doubles-perturbative-triples [CCSD(T)] level of theory, while their excited states and absorption spectra were computed using a large-scale multireference singles-doubles configuration-interaction approach, which includes electron-correlation effects at a sophisticated level. Our calculated spectra are the first ones for Si₂H₂ and Si₂H₄ conformers, while for Si₂H₆, we obtain excellent agreement with the experimental measurements, suggesting that our computational approach is reliable. Our calculated absorption spectra exhibit a strong structure-property relationship, suggesting the possibility of identifying various conformers based on their optical absorption fingerprints. Furthermore, we have also performed geometry optimization for the selected optically excited states, providing insights into their character.

Large entropic effects on the thermochemistry of silicon nanodusty plasma constituents

Determination of the thermodynamic properties of reactor constituents is the first step in designing control strategies for plasma-mediated deposition processes and is also a key fundamental issue in physical chemistry. In this work, a recently proposed multistructural statistical thermodynamic method is used to show the importance of multiple structures and torsional anharmonicity in determining the thermodynamic properties of silicon hydride clusters, which are important both in plasmas and in thermally driven systems. It includes five different categories of silicon hydride clusters and radicals, including silanes, silyl radicals, and silenes. We employed a statistical mechanical approach, namely the recently developed multistructural (MS) anharmonicity method, in combination with density functional theory to calculate the partition functions, which in turn are used to estimate thermodynamic quantities, namely Gibbs free energy, enthalpy, entropy, and heat capacity, for all of the systems considered. The calculations are performed using all of the conformational structures of each molecule or radical by employing the multistructural quasiharmonic approximation (MS-QH) and also by including torsional potential anharmonicity (MS-T). For those cases where group additivity (GA) results are available, the thermodynamic quantities obtained from our MS-T calculations differ considerably due to the fact that the GA method is based on single-structure data for isomers of each stoichiometry, and hence lack multistructural effects; whereas we find that multistructural effects are very important in silicon hydride systems. Our results also indicate that the entropic effect on the thermochemistry is huge and is dominated by multistructural effects. The entropic effect of multiple structures is also expected to be important for other kinds of chain molecules, and its effect on nucleation kinetics is expected to be large.

Ab initio chemical kinetics for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 under a-Si/H CVD conditions

The kinetics and mechanisms for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the related unimolecular decomposition of Si3H8 have been investigated by ab initio molecular orbital theory based on the QCISD(T)/CBS//QCISD/6-311++G(d,p) method in conjunction with quantum statistical variational Rice-Ramsperger-Kassel-Marcus (RRKM) calculations. For the barrierless radical association processes, their variational transition states have been characterized by the CASPT2//CASSCF method. The species involved in the study are known to coexist under CVD conditions. The results show that the association reaction of SiH2 and Si2H6 producing Si3H8 occurs by insertion via its lowest-energy path forming a loose hydrogen-bonding molecular complex with 8.3 kcal/mol binding energy; the reaction is exothermic by 55.0 kcal/mol. The chemically activated Si3H8 adduct can fragment by several paths, producing SiH4 + SiH3SiH (-0.7 kcal/mol), Si(SiH3)2 + H2 (-1.4 kcal/mol), and SiH3SiH2SiH + H2 (-1.4 kcal/mol). The predicted enthalpy changes as given agree well with available thermochemical data. Three other decomposition channels of Si3H8 occurring by Si-H or Si-Si breaking were found to be highly endothermic, and the reactions take place without a well-defined barrier. The heats of formation of Si3H8, SiH2SiH, Si2H4, i-Si3H7, n-Si3H7, Si(SiH3)2, and SiH3SiH2SiH have been predicted and found to be in close agreement with those available data in the literature. The product branching rate constants for SiH2 + Si2H6 and SiH3 + Si2H5 reactions and the thermal unimolecular decomposition of Si3H8 for all low-energy paths have been calculated with multichannel variational RRKM theory covering varying P,T conditions typically employed in PECVD and Cat-CVD processes for hydrogenated amorphous silicon (a-Si/H) film growth. The results were also found to be in good agreement with available kinetic data. Our kinetic results may be employed to model and control very large-area a-Si/H film growth for a new generation of solar cell applications.

Gas Phase and Gas Surface Kinetics of Transient Silicoin Hydride Species

This paper presents a summary of the current state of our understanding of the absolute reactivity of transient silicon hydride species, such as SiH, SiH2and SiH3in the gas phase and at the surface of thin films.

Direct detection of dimethylstannylene and tetramethyldistannene in solution and the gas phase by laser flash photolysis of 1,1-dimethylstannacyclopent-3-enes

The photochemistry of 1,1-dimethyl- and 1,1,3,4-tetramethylstannacyclopent-3-ene (4a and 4b, respectively) has been studied in the gas phase and in hexane solution by steady-state and 193-nm laser flash photolysis methods. Photolysis of the two compounds results in the formation of 1,3-butadiene (from 4a) and 2,3-dimethyl-1,3-butadiene (from 4b) as the major products, suggesting that cycloreversion to yield dimethylstannylene (SnMe2) is the main photodecomposition pathway of these molecules. Indeed, the stannylene has been trapped as the Sn-H insertion product upon photolysis of 4a in hexane containing trimethylstannane. Flash photolysis of 4a in the gas phase affords a transient absorbing in the 450-520-nm range that is assigned to SnMe2 by comparison of its spectrum and reactivity to those previously reported from other precursors. Flash photolysis of 4b in hexane solution affords results consistent with the initial formation of SnMe2 (lambda(max) approximately 500 nm), which decays over approximately 10 micros to form tetramethyldistannene (5b; lambda(max) approximately 470 nm). The distannene decays over the next ca. 50 micros to form at least two other longer-lived species, which are assigned to higher SnMe2 oligomers. Time-dependent DFT calculations support the spectral assignments for SnMe2 and Sn2Me4, and calculations examining the variation in bond dissociation energy with substituent (H, Me, and Ph) in disilenes, digermenes, and distannenes rule out the possibility that dimerization of SnMe2 proceeds reversibly. Addition of methanol leads to reversible reaction with SnMe2 to form a transient absorbing at lambda(max) approximately 360 nm, which is assigned to the Lewis acid-base complex between SnMe2 and the alcohol.

Electron deficient bridges involving silylenes: a theoretical study

Ab initio and density functional studies show that silylenes can form complexes with BH(3) and the resultant complexes possess 3c-2e bridges. The complexation energy for the formation of the these H-bridged structures is in the range of 18-46 kcal/mol. The characteristics of the electron deficient bridges depend on the substituents attached to the silylenes. With an increase in the pi-donating capacity of the substituents, the exothermicity of complex formation gets reduced but the kinetic stability of the H-bridged structures increase. The natural bond orbital analysis shows that all the H-bridged structures are associated with sigma(B-H)-->ppi(Si) second-order delocalization, which is responsible for the origin of the 3c-2e bonds. The complexation energies of the silylene-BH(3) complexes have been shown to have a correlation to the singlet-triplet energy gaps of silylenes.