Electronic structure of the III–V tetramer clusters and their positive ions

Optical properties of GaAs nanocrystals: influence of an electric field

A study of the electronic and optical properties of the hydrogen-terminated GaAs nanocrystals Ga₆₈As₆₈H₉₆ and Ga₉₂As₈₀H₁₀₈ is presented. In this study, their dielectric functions, refractive indices, and absorption coefficients were calculated using density functional theory (DFT). The influence of a uniform external electric field on the optical properties of the nanocrystals was also explored. The highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) for each nanocrystal were studied in the absence and the presence of the uniform external electric field. Our results indicate that the HOMO-LUMO gap decreases with increasing electric field strength. The calculated density of states revealed that the main reason for this shrinking gap is an increase in the delocalization of the gallium π-orbitals under the influence of an increasing external electric field. The permanent dipole moment and the polarizability of the nanocrystals under the induced electric field increased with increasing nanocrystal radius. The induced electric field caused a noticeable redshift in the absorption peaks. The electric field also increased the absorption intensity, particularly when the field strength was >0.25 V/Å.

GEOMETRIES AND ENERGY SEPARATIONS OF ELECTRONIC STATES OF In3N, InN3, AND THEIR IONS

Spectroscopic properties of the low-lying electronic states of In 3 N , InN 3, and their ions are computed by the complete active-space self-consistent field (CASSCF) followed by multireference singles + doubles configuration interaction (MRSDCI) calculations. Our results predict that the spectra of In 3 N / InN 3 are substantially different from those of Ga 3 As / GaAs 3 and Al 3 P / AlP 3 tetramers. The ground state of In 3 N is a closed-shell 1 A ′1 state with a planar D 3h symmetry, whereas the ground state of InN 3 is a 1Σ+ state of linear In – N – N – N structure. The equilibrium geometries, vibrational frequencies, atomization energies, adiabatic ionization potentials, electron affinities, and other properties are discussed.

Ab initiofinite field (hyper)polarizability computations on stoichiometric gallium arsenide clusters GanAsn (n=2–9)

We report reliable ab initio finite field (hyper)polarizability values at Hartree-Fock and second order Moller-Plesset perturbation theory (MP2) levels of theory for different geometrical configurations of small gallium arsenide clusters Ga(n)As(n) with n=2-5. We relied on all-electron basis sets and pseudopotentials suitable for (hyper)polarizability calculations. In each case, we used structures that have been established in the literature after we optimized their geometries at B3LYP/cc-pVTZ-PP level of theory. Our results suggest that the first order hyperpolarizability (beta) is much more sensitive to the special geometric features than the second order hyperpolarizability (gamma). For the most stable configurations up to ten atoms the second order hyperpolarizability at MP2 level of theory varies between 15 x 10(4) and 32 x 10(4) e(4)a0 (4)Eh(-3). In addition, we examined the polarizability per atom evolution versus the cluster size for Ga(n)As(n) with n=2-9. Our work extends earlier theoretical studies which were limited to eight atoms and exposes that the polarizability/atom of the most stable stoichiometric configurations up to Ga(9)As(9) continues the monotonic downward trend with increasing size. Lastly, from the methodological point of view, our analysis shows that apart from polarizabilities, augmented pseudopotentials yield reliable first and second hyperpolarizability values as well.

Hyperpolarizability of GaAs dimer is not negative

We present a systematic study of the static electric hyperpolarizability of Ga(2)As(2). The authors rely on finite-field high-level ab initio calculations with carefully optimized basis sets. Their best values for the mean and the anisotropy of the dipole polarizability are alpha=158.57 and Deltaalpha=130.33e(2)a(0) (2)E(h) (-1). For the hyperpolarizability we propose an estimate gamma=(155+/-15)x10(3)e(4)a(0) (4)E(h) (-3), which does not agree with the negative value predicted by Lan et al. [J. Chem. Phys. 124, 094302 (2006)]. Density functional theory based methods yield values close to those predicted by conventional ab initio methods. The (hyper)polarizability components are particularly enhanced along the direction defined by the Ga-Ga axis.

Theoretical study of aluminum arsenide clusters: equilibrium geometries and electronic structures of Al(n)As(n) (n=1-4)

The geometry, electronic configurations, harmonic vibrational frequencies and stability of the structural isomers of Al(n)As(n) clusters (n=1-4) have been investigated using density functional theory. For dimers and trimers, the lowest energy structures are planar cumulenic rings (IIs, VIs) with D(nh) symmetry. The caged structure with T(d) symmetry (IXs) lie lowest in energy among the tetramers. The AlAs bond dominates the structures for many isomers so that one preferred dissociation channel is loss of the AlAs monomer. The atomic charges, hybridization and chemical bonding in the different structures are also discussed. Comparisons with valence-isoelectronic Si(2n), Al(n)P(n) and Ga(n)As(n) clusters of same size, the properties of the aluminum arsenide clusters are analogous to those of their corresponding Al(n)P(n), Si(2n) counterparts. The results can explain the modification and refinement of Si phase in AlSi alloy in the molecular level.