Selected ion flow drift tube studies of the reactions of Si+(2P) with HCl, H2O, H2S, and NH3: Reactions which produce atomic hydrogen

Silicon chemistry in the mesosphere and lower thermosphere

Silicon is one of the most abundant elements in cosmic dust, and meteoric ablation injects a significant amount of Si into the atmosphere above 80 km. In this study, a new model for silicon chemistry in the mesosphere/lower thermosphere is described, based on recent laboratory kinetic studies of Si, SiO, SiO2, and Si+. Electronic structure calculations and statistical rate theory are used to show that the likely fate of SiO2 is a two-step hydration to silicic acid (Si(OH)4), which then polymerizes with metal oxides and hydroxides to form meteoric smoke particles. This chemistry is then incorporated into a whole atmosphere chemistry-climate model. The vertical profiles of Si+ and the Si+/Fe+ ratio are shown to be in good agreement with rocket-borne mass spectrometric measurements between 90 and 110 km. Si+ has consistently been observed to be the major meteoric ion around 110 km; this implies that the relative injection rate of Si from meteoric ablation, compared to metals such as Fe and Mg, is significantly larger than expected based on their relative chondritic abundances. Finally, the global abundances of SiO and Si(OH)4 show clear evidence of the seasonal meteoric input function, which is much less pronounced in the case of other meteoric species.

H/D exchange in reactions of OH− with D2 and of OD− with H2 at low temperatures

The H₃O⁻ isotopic system was studied by observing the endothermic and exothermic isotope exchange reactions OD⁻ + H₂ → OH⁻ + HD and OH⁻ + D₂ → OD⁻ + HD using a cryogenic ion trap.

Ion/molecule reactions in SiH4/H2S and GeH4/H2S mixtures

The gas phase ion chemistry of silane/hydrogen sulfide and germane/hydrogen sulfide mixtures was studied by ion trap mass spectrometry (ITMS), in both positive and negative ionization mode. In positive ionization, formation of X/S (X = Si, Ge) mixed ions mainly takes place via reactions of silane or germane ions with H(2)S, through condensation followed by dehydrogenation. This is particularly evident in the system with silane. On the other side, reactions of H(n)S(2)(+) ions with XH(4) (X = Si, Ge) invariably lead to formation of a single X-S bond. In negative ionization, a more limited number of mixed ion species is detected, but their overall abundance reaches appreciable values, especially in the SiH(4)/H(2)S system. Present results clearly indicate that ion processes play an important role in formation and growth of clusters eventually leading to deposition of amorphous solids in chemical vapor deposition (CVD) processes.

A dynamical study of the Si(+) + H(2)O reaction

A dynamical study of the Si(+) + H(2)O reaction has been carried out by means of a quasiclassical trajectory method that decomposes the reaction into a capture step, for which an accurate analytical potential is employed, and an unimolecular step, in which the evolution of the collision complex is studied through a direct dynamics BHandHLYP/6-31G(d,p) method. The capture rate coefficient has been computed for thermal conditions corresponding to temperatures ranging from 50 to 1000 K. It is concluded that the main reason why the reaction rate is about 10 times smaller than the capture rate (at T = 298 K) is the topology of the potential energy surface of the ground state. It is also concluded that the ratio between the rates of product and reactant generation from the collision complex decreases quite steeply with increasing temperature, and therefore, the reaction rate decreases even more sharply. Exciting the stretching normal modes of water substantially increases that ratio, and moderate rotational excitation does not appear to have a relevant effect. The collision complex is always initially SiOH(2)(+), but in some trajectories, it becomes HSiOH(+), which generates the products, although the former species is the main intermediate.

Ultraviolet and infrared photodissociation of Si(+)(C6H6)n and Si(+)(C6H6)(n)Ar clusters

Ion-molecule complexes of the form Si(+)(C6H6)n and Si(+)(C6H6)(n)Ar are produced by laser vaporization in a pulsed nozzle cluster source. These clusters are mass-selected and studied with ultraviolet (355 nm) photodissociation and resonance-enhanced infrared photodissociation spectroscopy in the C-H stretch region of benzene. In the UV, Si(+)(C6H6)n clusters (n = 1-5) fragment to produce the Si(+)(C6H6)n mono-ligand species, suggesting that this ion has enhanced relative stability. IR photodissociation of Si(+)(C6H6)n complexes occurs by the elimination of benzene, while Si(+)(C6H6)(n)Ar complexes lose Ar. Resonances reveal C-H vibrational bands in the 2900-3300 cm(-1) region characteristic of the benzene ligand with shifts caused by the silicon cation bonding. The IR spectra confirm that the major component of the Si(+)(C6H6)n ions studied have the pi-complex structure rather than the isomeric insertion products suggested previously.

Ion−Molecule Reaction Mechanism of SiCN+/SiNC+ + HX (X = H, CH3, F, OH, NH2)

In contrast to the abundant data on the neutral-neutral reactions, little is known about the ion-molecule reactions involving silicon ions. A detailed mechanistic study at the B3LYP/6-311G(d,p) and CCSD(T)/6-311+G(2df,p) (single-point) computational levels was reported for the reactions of SiCN+/SiNC+ with a series of -bonded molecules HX (X = H, CH3, F, NH2). Together with the recently studied SiCN+/SiNC+ + H2O reactions, all of these reactions have nucleophilic substitution as their major pathway. Insertion is a much slower reaction. By contrast, the known atomic Si+ and C2N+ ion-molecule reactions go by insertion. Generally, the initial gas-phase condensation between SiCN+/SiNC+ and HX (except the nonionic H2) effectively forms the adduct HX...SiCN+/HX...SiNC+. The stability of the adduct increases with the electron-donating ability of X. Even at low temperatures, reactions with the electron donors NH3, H2O, and HF proceed rapidly to generate the fragments SiX+ + HCN (dominant) and SiX+ + HNC (minor). This suggests that such reactions may be useful in the synthesis of novel Si-X bonded species. However, the reactions of SiCN+ with completely saturated CH4 and H2 produce fragments only at high temperatures, and SiNC+ may even be unreactive. The calculated results may be helpful for understanding the chemistry of SiCN-based microelectric and photoelectric processes in addition to astrophysical processes in which the [Si,C,N]+ ion is involved. The results can also provide useful mechanistic information for the analogous ion-molecule reactions of the monovalent silicon-bearing ions.

Theoretical mechanistic study on the ion-molecule reaction of SiCN+/SiNC+ with H2O

The gas-phase ion-molecule reactions play very important roles in interstellar and in plasma chemistry. Motivated by recent astrophysical detection of the SiCN/SiNC radicals and laboratory characterization of some SiCN-containing species, we carried out a detailed potential energy survey on the SiCN+/SiNC(+) + H2O reaction at the Becke's three-parameter Lee-Yang-Parr-B3LYP/6-311G(d,p) and coupled cluster with single, double, and triple excitations-CCSD(T)/6-311 + G(2df,p) (single-point) levels as an attempt towards understanding the SiCN+/SiNC+ reaction mechanisms. In contrast to the carbene-featured analogous CCN+/CNC(+) + H2X (X=O,S) reactions, the title reaction SiCN+/SiNC(+) + H2O are not associated with any competitive silylene-insertion characters. Moreover, the -CN <--> -NC interconversion has a low barrier and plays an important role in determining the final product distributions. This is also in marked difference from the CCN+/CNC+ reaction. It is shown that the isomeric sila-cations SiCN+ and SiNC+ can both react with H2O to barrierlessly generate the major product P1 HOSi(+) + HCN and the minor one P3 HOSi(+) + HNC, whereas other low-lying products such as P2 SiNCO(+) + H2, and P(0) H2NSi(+) + CO are kinetically unfeasible. The high efficiency of the SiCN+/SiNC+ reaction towards H2O and the potential importance of SiCN+/SiNC+ ion chemistry in interstellar and SiCN-based microelectric and photoelectric processes strongly appeals for future laboratory investigations on the SiCN+/SiNC+ chemical reactivity.