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Laukkanen P, Punkkinen M, Kuzmin M, Kokko K, Liu X, Radfar B, Vähänissi V, Savin H, Tukiainen A, Hakkarainen T, Viheriälä J, Guina M. Bridging the gap between surface physics and photonics. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:044501. [PMID: 38373354 DOI: 10.1088/1361-6633/ad2ac9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 02/19/2024] [Indexed: 02/21/2024]
Abstract
Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.
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Affiliation(s)
- Pekka Laukkanen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Marko Punkkinen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Mikhail Kuzmin
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Kalevi Kokko
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Xiaolong Liu
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Behrad Radfar
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Ville Vähänissi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Hele Savin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Antti Tukiainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Teemu Hakkarainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Jukka Viheriälä
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Mircea Guina
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
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Natarajan SK, Behler J. Neural network molecular dynamics simulations of solid–liquid interfaces: water at low-index copper surfaces. Phys Chem Chem Phys 2016; 18:28704-28725. [DOI: 10.1039/c6cp05711j] [Citation(s) in RCA: 114] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
Molecular dynamics simulation of the water–copper interface have been carried out using high-dimensional neural network potential based on density functional theory.
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Affiliation(s)
| | - Jörg Behler
- Lehrstuhl für Theoretische Chemie
- Ruhr-Universität Bochum
- D-44780 Bochum
- Germany
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Gayathri N, Izvekov S, Voth GA. Ab initio molecular dynamics simulation of the H/InP(100)–water interface. J Chem Phys 2002. [DOI: 10.1063/1.1483070] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Asbury JB, Hao E, Wang Y, Ghosh HN, Lian T. Ultrafast Electron Transfer Dynamics from Molecular Adsorbates to Semiconductor Nanocrystalline Thin Films. J Phys Chem B 2001. [DOI: 10.1021/jp003485m] [Citation(s) in RCA: 555] [Impact Index Per Article: 24.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- John B. Asbury
- Department of Chemistry, Emory University, Atlanta, Georgia 30322
| | - Encai Hao
- Department of Chemistry, Emory University, Atlanta, Georgia 30322
| | - Yongqiang Wang
- Department of Chemistry, Emory University, Atlanta, Georgia 30322
| | | | - Tianquan Lian
- Department of Chemistry, Emory University, Atlanta, Georgia 30322
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Izvekov S, Mazzolo A, VanOpdorp K, Voth GA. Ab initio molecular dynamics simulation of the Cu(110)–water interface. J Chem Phys 2001. [DOI: 10.1063/1.1342859] [Citation(s) in RCA: 68] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Engler C, Hofmann A. Reaction Paths in Concurrence: The Electrochemical Hydrogen Reaction on GaAs(111)A- and GaAs(110)-Surfaces A Quantumchemical Approach. ACTA ACUST UNITED AC 2001. [DOI: 10.1524/zpch.2001.215.4.461] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
Abstract
We have performed quantumchemical investigations towards a further explanation of the reaction mechanism of the hydrogen evolution reaction on semiconductor electrodes (continuation of Z. Phys. Chem. 210 (1999) 95). Details of the two-step-mechanism via H
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Yamamoto M, Kinoshita M, Kakiuchi T. Structure of the Pt(111)/liquid interface: a first-principles/RHNC calculation. Electrochim Acta 2000. [DOI: 10.1016/s0013-4686(00)00570-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
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Pant D, Levinger NE. Polar Solvation Dynamics of H2O and D2O at the Surface of Zirconia Nanoparticles. J Phys Chem B 1999. [DOI: 10.1021/jp991746q] [Citation(s) in RCA: 59] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Debi Pant
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872
| | - Nancy E. Levinger
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523-1872
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Calhoun A, Voth GA. Isotope Effects in Electron Transfer across the Electrode−Electrolyte Interface: A Measure of Solvent Mode Quantization. J Phys Chem B 1998. [DOI: 10.1021/jp982633u] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- August Calhoun
- Department of Chemistry and Henry Eyring Center for Theoretical Chemistry, University of Utah, Salt Lake City, Utah 84112
| | - Gregory A. Voth
- Department of Chemistry and Henry Eyring Center for Theoretical Chemistry, University of Utah, Salt Lake City, Utah 84112
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Calhoun A, Voth GA. Computer simulation of electron transfer processes across the electrode|electrolyte interface: a treatment of solvent and electrode polarizability. J Electroanal Chem (Lausanne) 1998. [DOI: 10.1016/s0022-0728(97)00644-x] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Yamamoto M, Kinoshita M. Structure of the metal-liquid interface: self-consistent combination of the first-principles metal calculation and an integral equation method. Chem Phys Lett 1997. [DOI: 10.1016/s0009-2614(97)00711-2] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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