Theoretical study of the low-lying electronic states of XeO and XeS

Experimental and theoretical study of the collisional quenching of S(1D) by Ar

We present an experimental and theoretical investigation of the deactivation rate of S(¹D) atoms by collisions with argon.

Synthesis and Characterization of [XeOXe](2+) in the Adduct-Cation Salt, [CH3 CN- - -XeOXe- - -NCCH3 ][AsF6 ]2

Acetonitrile and [FXeOXe- - -FXeF][AsF6 ] react at -60 °C in anhydrous HF (aHF) to form the CH3 CN adduct of the previously unknown [XeOXe](2+) cation. The low-temperature X-ray structure of [CH3 CN- - -XeOXe- - -NCCH3 ][AsF6 ]2 exhibits a well-isolated adduct-cation that has among the shortest Xe-N distances obtained for an sp-hybridized nitrogen base adducted to xenon. The Raman spectrum was fully assigned by comparison with the calculated vibrational frequencies and with the aid of (18) O-enrichment studies. Natural bond orbital (NBO), atoms in molecules (AIM), electron localization function (ELF), and molecular electrostatic potential surface (MEPS) analyses show that the Xe-O bonds are semi-ionic whereas the Xe-N bonds may be described as strong electrostatic (σ-hole) interactions.

Theoretical investigation of the dynamics of O((1)D→(3)P) electronic quenching by collision with Xe

We present the quantum close-coupling treatment of spin-orbit induced transitions between the (1)D and (3)P states of an atom in collisions with a closed-shell spherical partner. In the particular case of O colliding with Xe, we used electronic structure calculations to compute the relevant potential energy curves and spin-orbit coupling matrix elements. We then carried out quantum scattering calculations of integral and differential quenching cross sections as functions of the collision energy. The calculated differential cross sections for electronic quenching are in reasonable agreement with measurements [Garofalo et al., J. Chem. Phys. 143, 054307 (2015)]. The differential cross sections exhibit pronounced oscillations as a function of the scattering angle. By a semiclassical analysis, we show that these oscillations result from quantum mechanical interference between two classical paths.

Optical and electron spin resonance studies of xenon-nitrogen-helium condensates containing nitrogen and oxygen atoms

We present the first observations of excimer XeO* molecules in molecular nitrogen films surrounding xenon cores of nanoclusters. Multishell nanoclusters form upon the fast cooling of a helium jet containing small admixtures of nitrogen and xenon by cold helium vapor (T = 1.5 K). Such nanoclusters injected into superfluid helium aggregate into porous impurity-helium condensates. Passage of helium gas with admixtures through a radio frequency discharge allows the storage of high densities of radicals stabilized in impurity-helium condensates. Intense recombination of the radicals occurs during destruction of such condensates and generates excited species observable because of optical emission. Rich spectra of xenon-oxygen complexes have been detected upon destruction of xenon-nitrogen-helium condensates. A xenon environment quenches metastable N((2)D) atoms but has a much weaker effect on the luminescence of N((2)P) atoms. Electron spin resonance spectra of N((4)S) atoms trapped in xenon-nitrogen-helium condensates have been studied. High local concentrations of nitrogen atoms (up to 10(21) cm(-3)) stabilized in xenon-nitrogen nanoclusters have been revealed.

Formation of HXeO in a xenon matrix: Indirect evidence of production, trapping, and mobility of XeO (1 1Σ+) in solid Xe

IR spectroscopy, laser induced fluorescence (LIF), and thermoluminescence (TL) measurements have been combined to monitor trapping, thermal mobility, and reactions of oxygen atoms in solid xenon. HXeO and O(3) have been used as IR active species that probe the reactions of oxygen atoms. N(2)O and H(2)O have been used as precursors for oxygen atoms by photolysis at 193 nm. Upon annealing of matrices after photolysis, ozone forms at two different temperatures: at 18-24 K from close O ...O(2) pairs and at approximately 27 K due to global mobility of oxygen atoms. HXeO forms at approximately 30 K reliably at higher temperature than ozone. Both LIF and TL show activation of oxygen atoms around 30 K. Irradiation at 240 nm after the photolysis at 193 nm depletes the oxygen atom emission at 750 nm and reduces the amount of HXeO generated in subsequent annealing. Part of the 750 nm emission can be regenerated by 266 nm and this process increases the yield of HXeO in annealing as well. Thus, we connect oxygen atoms emitting at 750 nm with annealing-induced formation of HXeO radicals. Ab initio calculations at the CCSD(T)/cc-pV5Z level show that XeO (1(1)Sigma(+)) is much more deeply bound [D(e) = 1.62 eV for XeO --> Xe+O((1)D)] than previous calculations have predicted. Taking into account the interactions with the medium in an approximate way, it is estimated that XeO (1(1)Sigma(+)) has a similar energy in solid xenon as compared with interstitially trapped O((3)P) suggesting that both possibly coexist in a low temperature solid. Taking into account the computational results and the behavior of HXeO and O(3) in annealing and irradiations, it is suggested that HXeO may be formed from singlet oxygen atoms which are trapped in a solid as XeO (1(1)Sigma(+)).

A neutral xenon-containing radical, HXeO

We report an open-shell species containing xenon, HXeO ((2)Sigma), prepared by UV photolysis of H(2)O/Xe or N(2)O/HBr/Xe solid mixtures at 7 K and subsequent thermal mobilization of oxygen atoms at >/=30 K. The H-Xe stretching absorption of HXeO in solid Xe is at 1466.1 cm(-1), and it shifts to 1070.3 cm(-1) upon deuteration. The extensive ab initio calculations indicate that HXeO is intrinsically stable, owing to significant ionic and covalent contributions to its bonding. The formation of HXeO ((2)Sigma) radicals in these experiments suggests extensive stabilization and thermal mobility of singlet ((1)D) oxygen atoms in solid Xe and holds promises for the stability of the HKrO and HArO species.