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Fickert M, Martinez-Haya R, Ruiz AM, Baldoví JJ, Abellán G. Exploring the effect of the covalent functionalization in graphene-antimonene heterostructures. RSC Adv 2024; 14:13758-13768. [PMID: 38681835 PMCID: PMC11046379 DOI: 10.1039/d4ra01029a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 03/24/2024] [Indexed: 05/01/2024] Open
Abstract
The growing field of two-dimensional (2D) materials has recently witnessed the emergence of heterostructures, however those combining monoelemental layered materials remain relatively unexplored. In this study, we present the chemical fabrication and characterization of a heterostructure formed by graphene and hexagonal antimonene. The interaction between these 2D materials is thoroughly examined through Raman spectroscopy and first-principles calculations, revealing that this can be considered as a van der Waals heterostructure. Furthermore, we have explored the influence of the antimonene 2D material on the reactivity of graphene by studying the laser-induced covalent functionalization of the graphene surface. Our findings indicate distinct degrees of functionalization based on the underlying material, SiO2 being more reactive than antimonene, opening the door for the development of controlled patterning in devices based on these heterostructures. This covalent functionalization implies a high control over the chemical information that can be stored but also removed on graphene surfaces, and its use as a patterned heterostructure based on antimonene and graphene. This research provides valuable insights into the antimonene-graphene interactions and their impact on the chemical reactivity during graphene covalent functionalization.
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Affiliation(s)
- M Fickert
- Department of Chemistry and Pharmacy, Joint Institute of Advanced Materials and Processes (ZMP), Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) Fürth 90762 Germany
| | - R Martinez-Haya
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - A M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - J J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
| | - G Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia Valencia 46980 Spain
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2
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Ali M, Yousaf M, Munir J, Iqbal Khan MJ. Achieving controllable multifunctionality through layer sliding. J Mol Graph Model 2024; 126:108638. [PMID: 37757650 DOI: 10.1016/j.jmgm.2023.108638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 09/05/2023] [Accepted: 09/18/2023] [Indexed: 09/29/2023]
Abstract
Dynamical variation of physical properties in a controllable fashion provides exciting possibilities to obtain multifunctional materials. In this work, layer-sliding is employed to modify the structural, interfacial electronic and optical properties of unintercalated and Mg-intercalated two-dimensional (2D) van der Waals heterostructure (vdW-HS) consisting of buckled silicene and hexagonal boron nitride (hBN). The most stable stacking configuration of silicene over hBN is screened out and then intercalated with Mg at the interface. Dynamical-dependent changes in the properties of vdW-HS are performed by sliding silicene over hBN monolayer in the absence and presence of the intercalant. Layer-sliding is carried out in equal length intervals, and various parametric quantities related to the physical characteristics of the vdW-HS are repeatedly calculated and compared. Apart from various parametric quantities, stability of unintercalated and Mg-intercalated vdW-HS is also checked by means of relative total energies, binding energies and vdW gaps along the sliding pathway. Comparison of binding energies shows that the un-slided, half-slided, and fully-slided Mg-intercalated vdW-HS are 1.52, 1.44 and 1.42 eV more stable than the unintercalated vdW-HS. Opening of a small band gap of 12, 31 and 28 meV for un-slided, half-slided and fully-slided unintercalated vdW-HS, respectively, is worth mentioning. To study the interfacial electronic behavior, planar average charge density difference (Δρ) and charge transfer (ΔQ) are also calculated and varied via layer-sliding. Further, we calculated diverse optical spectra such as the complex dielectric function (DF), electron energy loss function [L(ω)], diagonal components of dielectric tensor [ε(iω)], refractive index [n(ω)], extinction coefficient [k(ω)], absorption coefficient [α(ω)], and reflectivity [R(ω)] for un-slided, half-slided and fully-slided unintercalated and Mg-intercalated vdW-HS. Interestingly, the polarization and energy losses have been reduced in the case of Mg-intercalated vdW-HS. The suggested layer-sliding method can be established as a general scheme for bringing multifunctionality into a layered material.
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Affiliation(s)
- Mubashar Ali
- Department of Physics, University of Education, Lahore, Pakistan
| | - Masood Yousaf
- Department of Physics, University of Education, Lahore, Pakistan.
| | - Junaid Munir
- Department of Physics, Riphah International University, Lahore, Pakistan
| | - M Junaid Iqbal Khan
- Laboratory of Theoretical and Experimental Physics, Department of Physics, Bahauddin Zakariya University, Multan, 60800, Pakistan
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3
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Electronic Properties and Structure of Silicene on Cu and Ni Substrates. MATERIALS 2022; 15:ma15113863. [PMID: 35683160 PMCID: PMC9181705 DOI: 10.3390/ma15113863] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Revised: 05/20/2022] [Accepted: 05/26/2022] [Indexed: 12/04/2022]
Abstract
Silicene, together with copper or nickel, is the main component of electrodes for solar cells, lithium-ion batteries (LIB) and new-generation supercapacitors. The aim of this work was to study the electronic properties and geometric structure of “silicene–Ni” and “silicene–Cu” systems intended for use as LIB electrodes. The densities of electronic states, band structures, adhesion energies and interatomic distances in the silicene–(Cu, Ni) systems were determined by ab initio calculations. Silicene on a copper substrate exhibited temperature stability in the temperature range from 200 to 800 K, while on a nickel substrate, the structure of silicene was rearranged. Adsorption energies and bond lengths in the “silicene–Cu” system were calculated in the range of Li/Si ratios from 0.125 to 0.5. The formation of the Li2 isomer during the adsorption of lithium in a ratio to silicon of 0.375 and 0.5 was observed. Silicene was found to remain stable when placed on a copper substrate coated with a single layer of nickel. The charge redistribution caused by the addition of a nickel intermediate layer between silicene and a copper substrate was studied.
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4
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Zhou J, Li H, Tang HK, Shao L, Han K, Shen X. Phonon Thermal Transport in Silicene/Graphene Heterobilayer Nanostructures: Effect of Interlayer Interactions. ACS OMEGA 2022; 7:5844-5852. [PMID: 35224345 PMCID: PMC8867570 DOI: 10.1021/acsomega.1c05932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/23/2021] [Accepted: 02/01/2022] [Indexed: 06/14/2023]
Abstract
Heterostructuring, as a promising route to optimize the physical properties of 2D materials, has attracted great attention from the academic community. In this paper, we investigated the room-temperature in-plane and cross-plane phonon thermal transport in silicene/graphene van der Waals (vdW) heterostructures using molecular dynamics simulations. Our simulation results demonstrated that heat current along the graphene layer is remarkably larger than that along the silicene layer, which suggests that graphene dominates the thermal transport in silicene/graphene heterostructures. The in-plane phonon thermal conductivity of the silicene/graphene heterostructures could be a compromise between monolayer graphene and monolayer silicene. Heterostructuring can remarkably reduce the in-plane thermal conductivity of the graphene layer but increase the in-plane thermal conductivity of the silicene layer in heterobilayers compared with the freestanding monolayer counterparts because of their different structures. We also simulated the interlayer interaction strength effect on the in-plane phonon thermal conductivity and cross-plane interfacial thermal resistance of silicene/graphene heterostructures. Total in-plane phonon thermal conductivity and interfacial thermal resistance both decrease with the increase in the interlayer interaction strength in the silicene/graphene heterobilayers. In addition, the calculated interfacial thermal resistance shows the effect of the thermal transport direction across the interface. This study provides a useful reference for the thermal management regulation of 2D vdW heterostructures.
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Affiliation(s)
- Jiasheng Zhou
- School
of Materials Science and Physics, China
University of Mining and Technology, Xuzhou 221116, P. R. China
| | - Haipeng Li
- School
of Materials Science and Physics, China
University of Mining and Technology, Xuzhou 221116, P. R. China
| | - Ho-Kin Tang
- School
of Science, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Shenzhen
JL Computational Science and Applied Research Institute (CSAR), Shenzhen 518129, P. R. China
| | - Lei Shao
- Shenzhen
JL Computational Science and Applied Research Institute (CSAR), Shenzhen 518129, P. R. China
- Beijing
Computational Science Research Center (CSRC), Beijing 100194, P. R. China
| | - Kui Han
- School
of Materials Science and Physics, China
University of Mining and Technology, Xuzhou 221116, P. R. China
| | - Xiaopeng Shen
- School
of Materials Science and Physics, China
University of Mining and Technology, Xuzhou 221116, P. R. China
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5
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Zhang R, Jian W, Yang ZD, Bai FQ. Insights into the photocatalytic mechanism of the C4N/MoS2 heterostructure: A first-principle study. CHINESE CHEM LETT 2020. [DOI: 10.1016/j.cclet.2020.04.055] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
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6
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Do TN, Idrees M, Amin B, Hieu NN, Phuc HV, Hieu NV, Hoa LT, Nguyen CV. Electronic and photocatalytic properties of two-dimensional boron phosphide/SiC van der Waals heterostructure with direct type-II band alignment: a first principles study. RSC Adv 2020; 10:32027-32033. [PMID: 35518182 PMCID: PMC9056599 DOI: 10.1039/d0ra05579d] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2020] [Accepted: 08/13/2020] [Indexed: 11/21/2022] Open
Abstract
Designing van der Waals (vdW) heterostructures of two-dimensional materials is an efficient way to realize amazing properties as well as opening opportunities for applications in solar energy conversion and nanoelectronic and optoelectronic devices. In this work, we investigate the electronic, optical, and photocatalytic properties of a boron phosphide–SiC (BP–SiC) vdW heterostructure using first-principles calculations. The relaxed configuration is obtained from the binding energies, inter-layer distance, and thermal stability. We show that the BP–SiC vdW heterostructure has a direct band gap with type-II band alignment, which separates the free electrons and holes at the interface. Furthermore, the calculated absorption spectra demonstrate that the optical properties of the BP–SiC heterostructure are enhanced compared with those of the constituent monolayers. The intensity of optical absorption can reach up to about 105 cm−1. The band edges of the BP–SiC heterostructure are located at energetically favourable positions, indicating that the BP–SiC heterostructure is able to split water under working conditions of pH = 0–3. Our theoretical results provide not only a fascinating insight into the essential properties of the BP–SiC vdW heterostructure, but also helpful information for the experimental design of new vdW heterostructures. We investigate the structural, electronic, optical and photocatalytic properties of boron phosphide and SiC monolayers and their corresponding van der Waals heterostructure by density functional theory.![]()
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Affiliation(s)
- Thi-Nga Do
- Laboratory of Magnetism and Magnetic Materials
- Advanced Institute of Materials Science
- Ton Duc Thang University
- Ho Chi Minh City
- VietNam
| | - M. Idrees
- Department of Physics
- Hazara University
- Mansehra 21300
- Pakistan
| | - Bin Amin
- Department of Physics
- Abbottabad University of Science and Technology
- Abbottabad 22010
- Pakistan
| | - Nguyen N. Hieu
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
- Faculty of Natural Sciences
| | - Huynh V. Phuc
- Division of Theoretical Physics
- Dong Thap University
- Cao Lanh 870000
- Vietnam
| | - Nguyen V. Hieu
- Department of Physics
- The University of Da Nang
- University of Science and Education
- Da Nang
- Vietnam
| | - Le T. Hoa
- Institute of Research and Development
- Duy Tan University
- Da Nang 550000
- Vietnam
- Faculty of Natural Sciences
| | - Chuong V. Nguyen
- Department of Materials Science and Engineering
- Le Quy Don Technical University
- Ha Noi
- Vietnam
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7
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Yang G, Sun R, Gu Y, Xie F, Ding Y, Zhang X, Wang Y, Hua B, Ni X, Fan Q, Gu X. The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain. NANOMATERIALS 2019; 9:nano9121705. [PMID: 31795272 PMCID: PMC6956121 DOI: 10.3390/nano9121705] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 11/25/2019] [Accepted: 11/26/2019] [Indexed: 11/26/2022]
Abstract
A comprehensive insight into the electronic and optical properties of small-lattice-mismatched InSe-GeTe heterobilayer (HBL) is performed based on the density functional theory (DFT) with van der Waals corrections from first-principles perspective. The optimization of most stable geometric stacking mode for the InSe-GeTe HBL is demonstrated. In addition, it is found that the InSe-GeTe HBL forms a type-II heterostructure of staggered-gap band alignment, resulting in an indirect band gap of 0.78 eV, which could be employed as a separator for electron-hole pairs. Moreover, the influence of biaxial strain on the electronic and optical properties of the InSe-GeTe HBL are systematically explored by calculating the band structures, density of states (PDOS), electron density differences, and optical absorption spectra of InSe-GeTe HBL under compressive and tensile biaxial strains. The results indicate that the electronic structures and optical performance of InSe-GeTe HBL could be modulated by changing the biaxial strain conveniently. Our findings provide new opportunities for the novel InSe-GeTe HBL to be applied in the electronic and optoelectronic fields.
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Affiliation(s)
- Guofeng Yang
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
- Correspondence:
| | - Rui Sun
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Yan Gu
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Feng Xie
- Nanjing Zike Optoelectronic Co., Ltd, Nanjing 211112, China;
| | - Yu Ding
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Xiumei Zhang
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Yueke Wang
- School of Science, Jiangnan University, Wuxi 214122, China; (R.S.); (Y.G.); (Y.D.); (X.Z.); (Y.W.)
| | - Bin Hua
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
| | - Xianfeng Ni
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
| | - Qian Fan
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
| | - Xing Gu
- Institute of Next Generation Semiconductor Materials, Southeast University, Suzhou 215123, China; (B.H.); (X.N.); (Q.F.); (X.G.)
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8
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Qin X, Hu W, Yang J. Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures. Phys Chem Chem Phys 2019; 21:23611-23619. [PMID: 31624813 DOI: 10.1039/c9cp04654b] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We systematically investigate the effects of external electric field and interlayer coupling on the electronic structures and contact characteristics of hybrid graphene and tellurene (G/Te) van der Waals heterostructures (vdWHs) based on first-principles calculations. Our results show that the G/α-Te interface is formed by an n-type Schottky contact with a negligible Schottky barrier height (SBH), while the G/β-Te interface is formed by a p-type Schottky contact with a SBH of 0.51 eV. By applying external electric fields perpendicular to the G/Te interfaces or changing the interlayer distance between the graphene and tellurene monolayers, both Schottky barriers and contact types (n-type Schottky, p-type Schottky, and Ohmic) at the G/Te interfaces can be effectively modulated. The changes in charge transfer, as well as the corresponding interface dipole and potential step with the external electric field and interlayer coupling, are revealed to account for the reason for tunable Schottky and Ohmic contacts at the G/Te interfaces. Therefore, the G/Te vdWHs show tunable Schottky and Ohmic contacts with promising applications of graphene-based field-effect transistors in future experiments.
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Affiliation(s)
- Xinming Qin
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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9
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Deng Z, Wang X, Cui J. Effect of interfacial defects on the electronic properties of graphene/g-GaN heterostructures. RSC Adv 2019; 9:13418-13423. [PMID: 35519598 PMCID: PMC9063968 DOI: 10.1039/c9ra01576k] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2019] [Accepted: 04/17/2019] [Indexed: 01/28/2023] Open
Abstract
To gain deep insights into their interactions, the effects of interfacial defects on the structural and electronic properties of graphene/g-GaN heterostructures were investigated by using first-principles calculations. The graphene/g-GaN-VGa heterostructure maintains a p-type Schottky contact in the spin-up channel and the Schottky barrier height (SBH) is decreased to 0.332 eV, but there is not a metal/semiconductor contact in the spin-down channel. However, the n-type SBH is negative for the graphene/g-GaN-VN heterostructure, indicating an ohmic contact. Furthermore, the SBH in the graphene/g-GaN heterostructure can be effectively modulated by the interlayer distance. The research could provide a strategy for the development and fabrication of efficient novel nanoelectronic devices.
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Affiliation(s)
- Zhongxun Deng
- Shanxi Province Key Laboratory of Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi'an University of Technology Xi'an 710048 Shaanxi P. R. China
| | - Xianhui Wang
- Shanxi Province Key Laboratory of Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi'an University of Technology Xi'an 710048 Shaanxi P. R. China
| | - Jie Cui
- Shanxi Province Key Laboratory of Electrical Materials and Infiltration Technology, School of Materials Science and Engineering, Xi'an University of Technology Xi'an 710048 Shaanxi P. R. China
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10
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Peng L, Cui Y, Sun L, Du J, Wang S, Zhang S, Huang Y. Dipole controlled Schottky barrier in the blue-phosphorene-phase of GeSe based van der Waals heterostructures. NANOSCALE HORIZONS 2019; 4:480-489. [PMID: 32254101 DOI: 10.1039/c8nh00413g] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Controlling the interface structure is of utmost importance to regulating the nanoscale Schottky barrier height (SBH). Herein, by using first-principles calculations, the electronic properties of the graphene (G) based blue-phosphorene-phase of GeSe van der Waals (vdW) heterostructures, including M/G and X/G interfaces (M = Ge; X = Se), are systematically investigated. When the layer spacing exceeds the vdW gap, n-type Schottky contacts are formed for both MX/G and XM/G heterojunctions. With the layer spacing decreasing to equilibrium distances, due to different charge transfer across the interface, MX/G and XM/G heterojunctions display n- and p-type Schottky contacts, respectively. Further decreasing the layer distance makes both heterojunctions transit into p-type ones. The layer-spacing-dependent SBHs can be rationalized by the increased charge transfer across the interface and the resulting interfacial dipole enhancement. Enlightened by the finding of dipole-controlled SBHs, using MX as building blocks, two different stacking patterns, i.e., nMX-MX-G and nXM-XM-G (n = 1 and 2), are designed to further modulate the SBH. Interestingly, due to the presence of the intrinsic dipole of MX, it is found that the magnitude and orientation of the interfacial dipole can be artificially engineered. With n increasing from 0 to 2, nMX-MX-G with an X/G interface changes from the n-type Schottky contact to Ohmic contact. The Fermi level meets the conduction band and G shows a p-type doping feature finally. Likewise, transition from p-type Schottky contact to Ohmic contact is observed for the nXM-XM-G with M/G interface, accompanied by the Fermi level touching the valence band and the feature of n-type doping for G. The role of nMX stacking seems like the role of applying an external electric field (E-field): applying positive E-field is equivalent to the increase of dipole moment while negative E-field corresponds to the offset of dipole moment. In brief, the SBHs of GeSe/G contact are found to be tunable which originates from the intrinsic dipole of MX. The predictable SBHs for these kinds of charming built-in dipole systems are expected to be highly desirable in electronic devices.
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Affiliation(s)
- Lei Peng
- College of Chemistry and Material Science, The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Laboratory of Molecule-Based Materials, Anhui Normal University, Wuhu 241000, China.
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11
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Hu L, Kang L, Yang J, Huang B, Liu F. Significantly enhanced magnetoresistance in monolayer WTe 2via heterojunction engineering: a first-principles study. NANOSCALE 2018; 10:22231-22236. [PMID: 30465685 DOI: 10.1039/c8nr04391d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The large non-saturating magnetoresistance (MR) of bulk WTe2 is known to be greatly reduced in thin films with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe2 bonded to graphene, through a WTe2/graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe2. Moreover, the MR shows a strong stacking-orientation-dependent behavior, which facilitates a tunable MR effect. Our findings illustrate a new route to enhancing the MR of WTe2 and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.
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Affiliation(s)
- Lin Hu
- Beijing Computational Science Research Center, Beijing 100193, China
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12
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Graphene-induced bi-tilted two-component smectic CG phase with bulk ferroelectricity in hydrogen-bonded dimer liquid crystals. J Mol Liq 2018. [DOI: 10.1016/j.molliq.2018.09.030] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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13
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Yun J, Zhang Y, Ren Y, Xu M, Yan J, Zhao W, Zhang Z. Tunable band gap of graphyne-based homo- and hetero-structures by stacking sequences, strain and electric field. Phys Chem Chem Phys 2018; 20:26934-26946. [PMID: 30283931 DOI: 10.1039/c8cp03533d] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A comprehensive investigation was carried out on graphyne/graphyne (Gyne/Gyne), graphyne-like BN/graphyne-like BN (BNyne/BNyne) and graphyne/graphyne-like BN (Gyne/BNyne) bilayer structures using van der Waals (vdW)-corrected density functional theory. These bilayers exhibited distinct stacking-dependent characteristics in their ground state electronic structure and also had different responses to external strain and a vertical electric field. For the Gyne/Gyne and Gyne/BNyne bilayers, the application of biaxial tensile strain led to an increase in the band gap, while the application of biaxial compressive strain in addition to uniaxial strain, either under tension or compression, induced a reduction in the band gap. However, in the case of the BNyne/BNyne bilayer, the application of biaxial tensile strain led to a decrease in the band gap, but an increase in the band gap occurred under biaxial compressive strain, which could be explained by a change in the ionic nature of the B-N bonds. Under a vertical electric field, the band gaps of the homo-bilayers (Gyne/Gyne and BNyne/BNyne) decreased and were symmetrical. However, the hetero-bilayer (Gyne/BNyne) exhibited a decreased band gap under a positive electric field, but an almost constant band gap under a negative electric field. The physical origin of the band gap variation under an electric field was unraveled using energy-band theory. Our findings pave the way for experimental research and provide valuable insight into two-dimensional vdW layered structures for use in next generation flexible nanoelectronics and optoelectronic devices.
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Affiliation(s)
- Jiangni Yun
- School of Information Science and Technology, Northwest University, Xi'an, 710127, P. R. China.
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14
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Cheng Y, Zhang G, Zhang Y, Chang T, Pei QX, Cai Y, Zhang YW. Large diffusion anisotropy and orientation sorting of phosphorene nanoflakes under a temperature gradient. NANOSCALE 2018; 10:1660-1666. [PMID: 29319094 DOI: 10.1039/c7nr07226k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
We perform molecular dynamics simulations to investigate the motion of phosphorene nanoflakes on a large graphene substrate under a thermal gradient. It is found that the atomic interaction between the graphene substrate and the phosphorene nanoflake generates distinct rates of motion for phosphorene nanoflakes with different orientations. Remarkably, for square phosphorene nanoflakes, the motion of zigzag-oriented nanoflakes is 2-fold faster than those of armchair-oriented and randomly-oriented nanoflakes. This large diffusion anisotropy suggests that sorting of phosphorene nanoflakes into specific orientations can be realized by a temperature gradient. The findings here provide interesting insights into strong molecular diffusion anisotropy and offer a novel route for manipulating two-dimensional materials.
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Affiliation(s)
- Yuan Cheng
- Institute of High Performance Computing, A*STAR, Singapore 138632.
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15
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Mogulkoc A, Mogulkoc Y, Kecik D, Durgun E. The effect of strain and functionalization on the optical properties of borophene. Phys Chem Chem Phys 2018; 20:21043-21050. [DOI: 10.1039/c8cp03594f] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The variation of the optical properties of borophene by applying strain and surface functionalization is revealed.
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Affiliation(s)
- A. Mogulkoc
- Department of Physics
- Faculty of Sciences
- Ankara University
- Ankara
- Turkey
| | - Y. Mogulkoc
- Department of Physics Engineering
- Faculty of Engineering
- Ankara University
- Ankara
- Turkey
| | - D. Kecik
- UNAM – National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology
- Bilkent University
- Ankara
- Turkey
- Department of Physics
| | - E. Durgun
- UNAM – National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology
- Bilkent University
- Ankara
- Turkey
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16
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Mogulkoc A, Mogulkoc Y, Modarresi M, Alkan B. Electronic structure and optical properties of novel monolayer gallium nitride and boron phosphide heterobilayers. Phys Chem Chem Phys 2018; 20:28124-28134. [DOI: 10.1039/c8cp05529g] [Citation(s) in RCA: 46] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
An external electric field modifies the electronic structure, charge distribution and energy band gap in the heterobilayer of gallium nitride/boron phosphide.
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Affiliation(s)
- A. Mogulkoc
- Department of Physics
- Faculty of Sciences
- Ankara University
- Tandogan
- Turkey
| | - Y. Mogulkoc
- Department of Physics Engineering
- Faculty of Engineering
- Ankara University
- Tandogan
- Turkey
| | - M. Modarresi
- Department of Physics
- Ferdowsi University of Mashhad
- Mashhad
- Iran
- Laboratory of Organic Electronics, Department of Science and Technology, Campus Norrköping, Linköping University
| | - B. Alkan
- Department of Physics Engineering
- Faculty of Engineering
- Ankara University
- Tandogan
- Turkey
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17
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Kistanov AA, Cai Y, Zhang YW, Dmitriev SV, Zhou K. Strain and water effects on the electronic structure and chemical activity of in-plane graphene/silicene heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:095302. [PMID: 28129204 DOI: 10.1088/1361-648x/aa57dc] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
By using first-principles calculations, the electronic structure of planar and strained in-plane graphene/silicene heterostructure is studied. The heterostructure is found to be metallic in a strain range from -7% (compression) to +7% (tension). The effect of compressive/tensile strain on the chemical activity of the in-plane graphene/silicene heterostructure is examined by studying its interaction with the H2O molecule. It shows that compressive/tensile strain is able to increase the binding energy of H2O compared with the adsorption on a planar surface, and the charge transfer between the water molecule and the graphene/silicene sheet can be modulated by strain. Moreover, the presence of the boron-nitride (BN)-substrate significantly influences the chemical activity of the graphene/silicene heterostructure upon its interaction with the H2O molecule and may cause an increase/decrease of the charge transfer between the H2O molecule and the heterostructure. These findings provide insights into the modulation of electronic properties of the in-plane free-standing/substrate-supported graphene/silicene heterostructure, and render possible ways to control its electronic structure, carrier density and redox characteristics, which may be useful for its potential applications in nanoelectronics and gas sensors.
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Affiliation(s)
- Andrey A Kistanov
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, 639798 Singapore. Institute of High Performance Computing, Agency for Science, Technology and Research, 138632 Singapore
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18
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Schottky barrier at graphene/metal oxide interfaces: insight from first-principles calculations. Sci Rep 2017; 7:41771. [PMID: 28165485 PMCID: PMC5292957 DOI: 10.1038/srep41771] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2016] [Accepted: 12/29/2016] [Indexed: 11/18/2022] Open
Abstract
Anode materials play an important role in determining the performance of lithium ion batteries. In experiment, graphene (GR)/metal oxide (MO) composites possess excellent electrochemical properties and are promising anode materials. Here we perform density functional theory calculations to explore the interfacial interaction between GR and MO. Our result reveals generally weak physical interactions between GR and several MOs (including Cu2O, NiO). The Schottky barrier height (SBH) in these metal/semiconductor heterostructures are computed using the macroscopically averaged electrostatic potential method, and the role of interfacial dipole is discussed. The calculated SBHs below 1 eV suggest low contact resistance; thus these GR/MO composites are favorable anode materials for better lithium ion batteries.
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19
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Zhang F, Li W, Ma Y, Tang Y, Dai X. Tuning the Schottky contacts at the graphene/WS2 interface by electric field. RSC Adv 2017. [DOI: 10.1039/c7ra00589j] [Citation(s) in RCA: 44] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Evolution of Schottky barriers of ΦBp and ΦBn in graphene/WS2 heterostructures as a function of external electric field.
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Affiliation(s)
- Fang Zhang
- College of Electric and Mechanical Engineering
- Pingdingshan University
- Pingdingshan 467000
- China
| | - Wei Li
- School of Mathematics & Physics
- Henan University of Urban Construction
- Pingdingshan 467036
- China
- College of Physics and Materials Science
| | - Yaqiang Ma
- College of Physics and Materials Science
- Henan Normal University
- Xinxiang 453007
- China
| | - Yanan Tang
- Department of Physics
- Zhengzhou Normal University
- Zhengzhou
- China
| | - Xianqi Dai
- College of Physics and Materials Science
- Henan Normal University
- Xinxiang 453007
- China
- Department of Physics
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20
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Jin C, Dai Y, Wei W, Sun Q, Li X, Huang B. Modulation of silicene properties by AsSb with van der Waals interaction. RSC Adv 2017. [DOI: 10.1039/c6ra25614g] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Our present work provides a new promising material AsSb monlayer as the substrate for silicene with a negligible mismatch, sizable band gap and high carrier mobility.
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Affiliation(s)
- Cui Jin
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Ying Dai
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Wei Wei
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Qilong Sun
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Xinru Li
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
| | - Baibiao Huang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan 250100
- China
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21
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Pei QX, Zhang X, Ding Z, Zhang YY, Zhang YW. Thermal stability and thermal conductivity of phosphorene in phosphorene/graphene van der Waals heterostructures. Phys Chem Chem Phys 2017. [DOI: 10.1039/c7cp02553j] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
We investigated the thermal stability and thermal conductivity of phosphorene in phosphorene/graphene heterostructures using molecular dynamics simulations.
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Affiliation(s)
- Qing-Xiang Pei
- Institute of High Performance Computing
- A*STAR
- Singapore 138632
- Singapore
| | - Xiaoliang Zhang
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education
- School of Energy and Power Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Zhiwei Ding
- Department of Material Science and Engineering
- Massachusetts Institute of Technology
- Cambridge
- USA
| | - Ying-Yan Zhang
- School of Computing
- Engineering and Mathematics
- Western Sydney University
- Penrith
- Australia
| | - Yong-Wei Zhang
- Institute of High Performance Computing
- A*STAR
- Singapore 138632
- Singapore
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22
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23
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Cui J, Liang S, Zhang J. A multifunctional material of two-dimensional g-C4N3/graphene bilayer. Phys Chem Chem Phys 2016; 18:25388-25393. [DOI: 10.1039/c6cp03946d] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Using first-principles calculations, we present a multifunctional material of g-C4N3/graphene bilayer with great potentials in the field of spintronics and photocatalysis.
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Affiliation(s)
- Jie Cui
- Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology
- Xi'an University of Technology
- Xi'an 710048
- P. R. China
| | - Shuhua Liang
- Shaanxi Province Key Laboratory for Electrical Materials and Infiltration Technology
- Xi'an University of Technology
- Xi'an 710048
- P. R. China
| | - Jianmin Zhang
- College of Physics and Information Technology
- Shaanxi Normal University
- Xi'an 710062
- P. R. China
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24
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Spent coffee grounds derived P, N co-doped C as electrocatalyst for supercapacitor applications. Electrochim Acta 2015. [DOI: 10.1016/j.electacta.2015.03.193] [Citation(s) in RCA: 40] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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25
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Liu B, Baimova JA, Reddy CD, Law AWK, Dmitriev SV, Wu H, Zhou K. Interfacial thermal conductance of a silicene/graphene bilayer heterostructure and the effect of hydrogenation. ACS APPLIED MATERIALS & INTERFACES 2014; 6:18180-18188. [PMID: 25308778 DOI: 10.1021/am505173s] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
van der Waals heterostructures, obtained by stacking layers of isolated two-dimensional atomic crystals like graphene (GE) and silicene (SE), are one of emerging nanomaterials for the development of future multifunctional devices. Thermal transport behaviors at the interface of these heterostructures play a pivotal role in determining their thermal properties and functional performance. Using molecular dynamics simulations, the interfacial thermal conductance G of an SE/GE bilayer heterostructure is studied. Simulations show that G of a pristine SE/GE bilayer at room temperature is 11.74 MW/m(2)K when heat transfers from GE to SE, and is 9.52 MW/m(2)K for a reverse heat transfer, showing apparent thermal rectification effects. In addition, G increases monotonically with both the temperature and the interface coupling strength. Furthermore, hydrogenation of GE is efficient in enhancing G if an optimum hydrogenation pattern is adopted. By changing the hydrogen coverage f, G can be controllably manipulated and maximized up to five times larger than that of pristine SE/GE. This study is helpful for understanding the interface thermal transport behaviors of novel van der Waals heterostructures and provides guidance for the design and control of their thermal properties.
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Affiliation(s)
- Bo Liu
- School of Mechanical and Aerospace Engineering and ∥DHI-NTU Center, Nanyang Environmental and Water Research Institute, School of Civil and Environmental Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore 639798, Singapore
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26
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Hu W, Xia N, Wu X, Li Z, Yang J. Silicene as a highly sensitive molecule sensor for NH3, NO and NO2. Phys Chem Chem Phys 2014; 16:6957-62. [DOI: 10.1039/c3cp55250k] [Citation(s) in RCA: 182] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
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27
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Abstract
A sizable and tunable bandgap is realized in silicene–MoS2heterobilayers.
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Affiliation(s)
- N. Gao
- Key Laboratory of Automobile Materials (Jilin University)
- Ministry of Education
- and School of Materials Science and Engineering
- Jilin University
- Changchun, China
| | - J. C. Li
- Key Laboratory of Automobile Materials (Jilin University)
- Ministry of Education
- and School of Materials Science and Engineering
- Jilin University
- Changchun, China
| | - Q. Jiang
- Key Laboratory of Automobile Materials (Jilin University)
- Ministry of Education
- and School of Materials Science and Engineering
- Jilin University
- Changchun, China
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28
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Xia W, Hu W, Li Z, Yang J. A first-principles study of gas adsorption on germanene. Phys Chem Chem Phys 2014; 16:22495-8. [DOI: 10.1039/c4cp03292f] [Citation(s) in RCA: 151] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
The adsorption of common gas molecules (N2, CO, CO2, H2O, NH3, NO, NO2, and O2) on germanene is studied with density functional theory.
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Affiliation(s)
- Wenqi Xia
- Hefei National Laboratory for Physical Sciences at Microscale
- University of Science and Technology of China
- Hefei, China
| | - Wei Hu
- Hefei National Laboratory for Physical Sciences at Microscale
- University of Science and Technology of China
- Hefei, China
- Computational Research Division
- Lawrence Berkeley National Laboratory
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at Microscale
- University of Science and Technology of China
- Hefei, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at Microscale
- University of Science and Technology of China
- Hefei, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics
- University of Science and Technology of China
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