Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

Ion concentration ratio measurements of ion beams generated by a commercial microwave electron cyclotron resonance plasma source

A commercially available electron cyclotron resonance (ECR) plasma source (GenII Plasma Source, tectra GmbH) is widely used for surface processing. This plasma source is compatible with ultrahigh vacuum systems, and its working pressure is relatively low, around 10-6-10-4 Torr even without differential pumping. Here, we report ion flux concentration ratios for each ion species in an ion beam from this source, as measured by a mass/energy analyzer that is a combination of a quadrupole mass spectrometer, an electrostatic energy analyzer, and focusing ion optics. The examined beams were those arising from plasmas produced from feed gases of H2, D2, N2, O2, Ar, and dry air over a range of input power and working pressures. H2(D2) plasmas are widely used for nuclear fusion applications and, hence, the ion concentration ratios of H+, H2+, and H3+ reported here will be useful information for research that applies this plasma source to well-controlled plasma-material interaction studies. Ion energy distributions, stability of operation, and impurity concentrations were also assessed for each of the plasma species investigated.

Characterization of Chiral Nanostructured Surfaces Made via Colloidal Lithography

Optically anisotropic materials were produced via colloidal lithography and characterized using scanning electronic microscopy (SEM), confocal microscopy, and polarimetry. A compact hexagonal array mask composed of silica sub-micron particles was fabricated via the Langmuir-Blodgett self-assembly technique. Subsequently, the mask pattern was transferred onto monocrystalline silicon and commercial glass substrates using ion beam etching in a vacuum. Varying the azimuthal angle while etching at oblique incidence carved screw-like shaped pillars into the substrates, resulting in heterochiral structures depending on the azimuthal angle direction. To enhance the material's optical properties through plasmon resonance, gold films were deposited onto the pillars. Polarimetric measurements were realized at normal and oblique incidences, showing that the etching directions have a clear influence on the value of the linear birefringence and linear dichroism. The polarimetric properties, especially the chiroptical responses, increased with the increase in the angle of incidence.

Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy

The structural and electronic origins of the interactions between polycarbonate and sputter deposited TiAlN were analysed using a combined electron and force spectroscopic approach. Interaction forces were measured by means of dynamic force spectroscopy and the surface polarizability was analysed by X-ray photoelectron valence band spectroscopy. It could be shown that the adhesive interactions between polycarbonate and TiAlN are governed by van der Waals forces. Different surface cleansing and oxidizing treatments were investigated and the effect of the surface chemistry on the force interactions was analysed. Intense surface oxidation resulted in a decreased adhesion force by a factor of two due to the formation of a 2 nm thick Ti_0.21Al_0.45O surface oxide layer. The origin of the residual adhesion forces caused by the mixed Ti_0.21Al_0.45O surface oxide was clarified by considering the non-retarded Hamaker coefficients as calculated by Lifshitz theory, based on optical data from Reflection Electron Energy Loss Spectroscopy. This disclosed increased dispersion forces of Ti_0.21Al_0.45O due to the presence of Ti(iv) ions and related Ti 3d band optical transitions.

Review Article: Unraveling synergistic effects in plasma-surface processes by means of beam experiments

The interaction of plasmas with surfaces is dominated by synergistic effects between incident ions and radicals. Film growth is accelerated by the ions, providing adsorption sites for incoming radicals. Chemical etching is accelerated by incident ions when chemical etching products are removed from the surface by ion sputtering. The latter is the essence of anisotropic etching in microelectronics, as elucidated by the seminal paper of Coburn and Winters [J. Appl. Phys. 50, 3189 (1979)]. However, ion-radical-synergisms play also an important role in a multitude of other systems, which are described in this article: (1) hydrocarbon thin film growth from methyl radicals and hydrogen atoms; (2) hydrocarbon thin film etching by ions and reactive neutrals; (3) plasma inactivation of bacteria; (4) plasma treatment of polymers; and (5) oxidation mechanisms during reactive magnetron sputtering of metal targets. All these mechanisms are unraveled by using a particle beam experiment to mimic the plasma-surface interface with the advantage of being able to control the species fluxes independently. It clearly shows that the mechanisms in action that had been described by Coburn and Winters [J. Appl. Phys. 50, 3189 (1979)] are ubiquitous.

Note: Ion-induced secondary electron emission from oxidized metal surfaces measured in a particle beam reactor

The secondary electron emission of metals induced by slow ions is characterized in a beam chamber by means of two coaxial semi-cylindrical electrodes with different apertures. The voltages of the outer electrode (screening), inner electrode (collector), and sample holder (target) were set independently in order to measure the effective yield of potential and kinetic electron emissions during ion bombardment. Aluminum samples were exposed to quantified beams of argon ions up to 2000 eV and to oxygen atoms and molecules in order to mimic the plasma-surface interactions on metallic targets during reactive sputtering. The variation of electron emission yield was correlated to the ion energy and to the oxidation state of Al surfaces. This system provides reliable measurements of the electron yields in real time and is of great utility to explore the fundamental surface processes during target poisoning occurring in reactive magnetron sputtering applications.