Identifying barriers to charge-carriers in the bulk and surface regions of Cu2ZnSnS4 nanocrystal films by x-ray absorption fine structures (XAFSs)

Favorable Bonding and Band Structures of Cu2ZnSnS4 and CdS Films and Their Photovoltaic Interfaces

Thin-film photovoltaic cells using Cu₂ZnSnS₄ (CZTS, p-type) have many advantages, such as high photoconversion, low cost, and great tunability with earth-abundant, nontoxic elements, all of which are necessary to be long-term contributors to next-generation solar energy harvesting. Accurate measurements of bonding and band structures of both the thin-film materials and their interfaces are paramount to designing the solar devices layer-by-layer. Here, finely tuned 1 μm thick CZTS films, 50 nm thick CdS layers (n-type), and their 1 μm/2 nm p-n junction were fabricated inexpensively using our previously studied methods and investigated extensively for maximizing the key interface in the CZTS solar devices. Synthesized bulk CZTS and CdS were analyzed for structural deviations and crystal defects using synchrotron-based (SR) X-ray absorption fine structure (XAFS) along with simulated XAFS patterns. The structural properties of the two materials were designed to favor photovoltaic activity. Interface valence band structures of the CZTS/CdS p-n junction were measured through SR X-ray photoelectron spectroscopy (SR-XPS) and compared with the ones simulated using density functional theory. A full band diagram was constructed from XPS of the bulk films and SR-XPS of the interface, providing guidelines in optimizing charge-carrier extraction from the CZTS absorber to CdS buffer layer. It turns out that a small spike-like interface in the conduction band overlap was formed, maintaining a strong internal bias, while favoring a small energy barrier to prevent large-scale recombination from occurring. A large open-circuit voltage was obtained in the preliminary solar cell devices built on the small spike-like interface.

Probing the CZTS/CdS heterojunction utilizing photoelectrochemistry and x-ray absorption spectroscopy

The importance of renewable resources is becoming more and more influential on research due to the depletion of fossil fuels. Cost-effective ways of harvesting solar energy should also be at the forefront of these investigations. Cu₂ZnSnS₄ (CZTS) solar cells are well within the frame of these goals, and a thorough understanding of how they are made and processed synthetically is crucial. The CZTS/CdS heterojunction was examined using photoelectrochemistry and synchrotron radiation (SR) spectroscopy. These tools provided physical insights into this interface that was formed by the electrophoretic deposition of CZTS nanocrystals and chemical bath deposition (CBD) of CdS for the respective films. It was discovered that CBD induced a change in the local and long range environment of the Zn in the CZTS lattice, which was detrimental to the photoresponse. X-ray absorption near-edge structures and extended X-ray absorption fine structures (EXAFSs) of the junction showed that this change was at an atomic level and was associated with the coordination of oxygen to zinc. This was confirmed through FEFF fitting of the EXAFS and through IR spectroscopy. It was found that this change in both photoresponse and the Zn coordination can be reversed with the use of low temperature annealing. Investigating CZTS through SR techniques provides detailed structural information of minor changes from the zinc perspective.