Study of graphene growth on copper foil by pulsed laser deposition at reduced temperature

Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)

Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser deposition of multilayered borophene films on Si (100) with β12 or χ3 bonding by tuning the mean kinetic energy in the plasma during the deposition process. Raman and X-ray photoelectron spectroscopies confirm β12 and χ3 bonding in the films. Borophene films with β12 bonding were obtained by tuning a high mean kinetic energy in the plasma, while borophene with χ3 bonding required a relatively low mean kinetic energy. Atomic force microscopy (AFM) micrographs revealed a granular and directional growth of the multilayered borophene films following the linear atomic terraces from the (100) silicon substrate. AFM nanofriction was used to access the borophene surfaces and to reveal the pull-off force and friction coefficient of the films where the surface oxide showed a significant contribution. To summarize, we show that it is possible to deposit multilayered borophene thin films with different bondings by tuning the mean kinetic energy during pulsed laser deposition. The characterization of the plasma during borophene deposition accompanies our findings, providing support for the changes in kinetic energy.

Review of Graphene Growth From a Solid Carbon Source by Pulsed Laser Deposition (PLD)

Graphene is a remarkable two-dimensional (2D) material that is of great interest to both academia and industry. It has outstanding electrical and thermal conductivity and good mechanical behavior with promising applications in electronic devices, supercapacitors, batteries, composite materials, flexible transparent displays, solar cells, and sensors. Several methods have been used to produce either pristine graphene or doped graphene. These include chemical vapor deposition (CVD), mechanical exfoliation, decomposition of SiC, liquid-phase exfoliation, pulsed laser deposition (PLD). Among these methods, PLD, which is routinely used for growing complex oxide thin films has proved to be an alternative to the more widely reported CVD method for producing graphene thin films, because of its advantages. Here we review the synthesis of graphene using PLD. We describe recent progress in preparing pristine graphene and doped graphene by PLD, including deposition processes and characterization. The goal of this complete survey is to describe the advantages of using the technique for graphene growth. The review will also help researchers to better understand graphene synthesis using the PLD technique.

Tailoring the Grain Size of Bi-Layer Graphene by Pulsed Laser Deposition

Improving the thermoelectric efficiency of a material requires a suitable ratio between electrical and thermal conductivity. Nanostructured graphene provides a possible route to improving thermoelectric efficiency. Bi-layer graphene was successfully prepared using pulsed laser deposition in this study. The size of graphene grains was controlled by adjusting the number of pulses. Raman spectra indicated that the graphene was bi-layer. Scanning electron microscopy (SEM) images clearly show that graphene changes from nanostructured to continuous films when more pulses are used during fabrication. Those results indicate that the size of the grains can be controlled between 39 and 182 nm. A detailed analysis of X-ray photoelectron spectra reveals that the sp² hybrid state is the main chemical state in carbon. The mobility is significantly affected by the grain size in graphene, and there exists a relatively stable region between 500 and 800 pulses. The observed phenomena originate from competition between decreasing resistance and increasing carrier concentration. These studies should be valuable for regulating grains sizes for thermoelectric applications of graphene.