A rapid method to extract Seebeck coefficient under a large temperature difference

Optical and thermoelectric properties of new Janus ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers: a first-principles study

Thermoelectric materials have received great interest because they directly tap into the vast reserves of currently underused thermal energy, in an environmentally friendly manner. In this work, we investigated the electronic, optical and thermoelectric properties of novel ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers by performing density functional theory calculations. The dynamic and thermal stabilities of ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers were confirmed by their phonon band structures and ab initio molecular dynamics (AIMD) simulations, which showed that all the studied monolayers are stable. Calculated electronic band structures showed that ZnSiTe2, ZnGeSe2, and ZnSnTe2 have a direct band gap, while the remaining monolayers have an indirect band gap. Optical properties in terms of the imaginary part of the dielectric function have also been investigated, which showed that all the first excitonic peaks lie in the visible region. Transport coefficients, such as the Seebeck coefficient (S), electrical conductivity (σ) and power factor (PF) were calculated using the Boltzmann theory and plotted against chemical potential. The results demonstrated that the peak values of the p-type region for the PF are greater than those of the n-type region. Notably, ZnSiTe2 exhibits a large PF due to its smaller Seebeck coefficient and higher electrical conductivity compared to ZnSnS2, indicating that it is a promising candidate for thermoelectric applications. Our findings reveal that ZnMN2 (M = Ge, Sn, Si and N = S, Se, Te) monolayers open up new possibilities for optoelectronics and thermoelectric device applications.

Simple, reversible gradient Seebeck coefficient measurement system for 300-600 K with COMSOL simulations

Seebeck measurement is a crucial step for characterizing thermoelectric samples, as measuring the accurate value with a simpler system design is challenging. Here, we report a simple design of the Seebeck coefficient measurement system, which can measure the thermo-emf (Seebeck coefficient) of the sample, under a limited temperature range of 300-600 K. Unlike the majority of the reported instrumental designs, the system does not have a hot walled chamber. The sample is sandwiched between two brass block supported heaters, which are controlled separately. Thus, this type of system is suitable for a window of the temperature range near room temperature. In this paper, we report the system that can measure the Seebeck coefficient up to 600 K. The heaters touch the sample through 1 mm thick silver caps, which offer insignificant thermal resistance and a stable temperature, as seen through experiment as well as COMSOL simulations. A typical sample has, at maximum, a diameter of 10 mm and a thickness of 2-3 mm. A reversible temperature gradient is applied in quasi-static direct current mode. By virtue of its design, the sample holder ensures a minimum thermal and electrical contact resistance during a measurement cycle. The combination of metals used for measurement (Ag and Cu) shows negligible junction contribution. The variance up to ±2% and accuracy up to 8% at a high temperature have been obtained using calibration sample reference data of state-of-the-art commercial systems.

Ultrahigh Power Factor in Thermoelectric System Nb0.95M0.05FeSb (M = Hf, Zr, and Ti)

Conversion efficiency and output power are crucial parameters for thermoelectric power generation that highly rely on figure of merit ZT and power factor (PF), respectively. Therefore, the synergistic optimization of electrical and thermal properties is imperative instead of optimizing just ZT by thermal conductivity reduction or just PF by electron transport enhancement. Here, it is demonstrated that Nb0.95Hf0.05FeSb has not only ultrahigh PF over ≈100 µW cm-1 K-2 at room temperature but also the highest ZT in a material system Nb0.95M0.05FeSb (M = Hf, Zr, Ti). It is found that Hf dopant is capable to simultaneously supply carriers for mobility optimization and introduce atomic disorder for reducing lattice thermal conductivity. As a result, Nb0.95Hf0.05FeSb distinguishes itself from other outstanding NbFeSb-based materials in both the PF and ZT. Additionally, a large output power density of ≈21.6 W cm-2 is achieved based on a single-leg device under a temperature difference of ≈560 K, showing the realistic prospect of the ultrahigh PF for power generation.

A Highly Thermostable In₂O₃/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

An In₂O₃/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In₂O₃/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In₂O₃ films increased with the increase in annealing time. The thermoelectric voltage of the In₂O₃/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In₂O₃/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C.