Atomic layer deposition on porous powders with in situ gravimetric monitoring in a modular fixed bed reactor setup

Tuning catalysis by surface-deposition of elements on oxidation catalysts via atomic layer deposition

This study on surface-modifications of bulk oxidation catalysts with sub-monolayers of POx, BOx and MnOxvia atomic layer deposition demonstrates this method to be a powerful tool for tuning the performance in selective oxidations of light alkanes.

Synthesis of High Surface Area-Group 13-Metal Oxides via Atomic Layer Deposition on Mesoporous Silica

The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaO_x, InO_x) was deposited using sequential dosing of trimethylgallium or trimethylindium and water at 150 °C. In-situ thermogravimetry provided direct insight into the growth rates and deposition behavior. The highly amorphous and well-dispersed nature of the oxides was shown by XRD and STEM EDX-mappings. N₂ sorption analysis revealed that both ALD processes resulted in high specific surface areas while maintaining the pore structure. The stoichiometry of GaO_x and InO_x was suggested by thermogravimetry and confirmed by XPS. FTIR and solid-state NMR were conducted to investigate the ligand deposition behavior and thermogravimetric data helped estimate the layer thicknesses. Finally, this study provides a deeper understanding of ALD on powder substrates and enables the precise synthesis of high surface area metal oxides for catalytic applications.

Toolbox for atomic layer deposition process development on high surface area powders

Atomic layer deposition (ALD) is an industrially applied technique for thin film deposition. The vast majority of processes target flat substrates rather than powders. For ALD on powders, new processes are needed, as different reaction conditions are required. Here, two setups are described in detail, which enhance the ALD process development for powders. The first setup described is capable of directly measuring the vapor pressure of a given precursor by a capacitance diaphragm gauge. Promising precursors can be pre-selected, and suitable precursor saturation temperatures can be determined. The second setup consists of four parallel reactors with individual temperature zones to screen the optimal ALD temperature window in a time efficient way. Identifying the precursor saturation temperature beforehand and subsequently performing the first ALD half cycle in the parallel setup at four different reactor temperatures simultaneously will drastically reduce process development times. Validation of both setups is shown for the well-known ALD precursors, trimethylaluminum to deposit aluminum oxide and diethyl zinc to deposit zinc oxide, both on amorphous silica powder.

Atomic Layer Deposition of ZnO on Mesoporous Silica: Insights into Growth Behavior of ZnO via In-Situ Thermogravimetric Analysis

ZnO is a remarkable material with many applications in electronics and catalysis. Atomic layer deposition (ALD) of ZnO on flat substrates is an industrially applied and well-known process. Various studies describe the growth of ZnO layers on flat substrates. However, the growth characteristics and reaction mechanisms of atomic layer deposition of ZnO on mesoporous powders have not been well studied. This study investigates the ZnO ALD process based on diethylzinc (DEZn) and water with silica powder as substrate. In-situ thermogravimetric analysis gives direct access to the growth rates and reaction mechanisms of this process. Ex-situ analytics, e.g., N₂ sorption analysis, XRD, XRF, HRTEM, and STEM-EDX mapping, confirm deposition of homogenous and thin films of ZnO on SiO₂. In summary, this study offers new insights into the fundamentals of an ALD process on high surface area powders.

Mechanistic studies of atomic layer deposition on oxidation catalysts – AlOx and POx deposition

Atomic layer deposition of phosphorus oxide on divanadium pentoxide powder undergoes controllable redox chemistry.

Investigating the Trimethylaluminium/Water ALD Process on Mesoporous Silica by In Situ Gravimetric Monitoring

A low amount of AlO_x was successfully deposited on an unordered, mesoporous SiO₂ powder using 1–3 ALD (Atomic Layer Deposition) cycles of trimethylaluminium and water. The process was realized in a self-built ALD setup featuring a microbalanceand a fixed particle bed. The reactor temperature was varied between 75, 120, and 200 °C. The self-limiting nature of the deposition was verified by in situ gravimetric monitoring for all temperatures. The coated material was further analyzed by nitrogen sorption, inductively coupled plasma-optical emission spectroscopy, powder X-ray diffraction, high-resolution transmission electron microscopy, attenuated total reflection Fourier transformed infrared spectroscopy, and elemental analysis. The obtained mass gains correspond to average growth between 0.81–1.10 Å/cycle depending on substrate temperature. In addition, the different mass gains during the half-cycles in combination with the analyzed aluminum content after one, two, and three cycles indicate a change in the preferred surface reaction of the trimethylaluminium molecule from a predominately two-ligand exchange with hydroxyl groups to more single-ligand exchange with increasing cycle number. Nitrogen sorption isotherms demonstrate (1) homogeneously coated mesopores, (2) a decrease in surface area, and (3) a reduction of the pore size. The experiment is successfully repeated in a scale-up using a ten times higher substrate batch size.