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Heo J, Segalina A, Kim D, Ahn DS, Oang KY, Park S, Kim H, Ihee H. Ultrafast Interfacial Charge Transfer Initiates Mechanical Stress and Heat Transport at the Au-TiO 2 Interface. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2400919. [PMID: 38976563 DOI: 10.1002/advs.202400919] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Indexed: 07/10/2024]
Abstract
Metal-semiconductor interfaces are crucial components of optoelectronic and electrical devices, the performance of which hinges on intricate dynamics involving charge transport and mechanical interaction at the interface. Nevertheless, structural changes upon photoexcitation and subsequent carrier transportation at the interface, which crucially impact hot carrier stability and lifetime, remain elusive. To address this long-standing problem, they investigated the electron dynamics and resulting structural changes at the Au/TiO2 interface using ultrafast electron diffraction (UED). The analysis of the UED data reveals that interlayer electron transfer from metal to semiconductor generates a strong coupling between the two layers, offering a new way for ultrafast heat transfer through the interface and leading to a coherent structural vibration that plays a critical role in propagating mechanical stress. These findings provide insights into the relationship between electron transfer and interfacial mechanical and thermal properties.
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Affiliation(s)
- Jun Heo
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Radiation Center for Ultrafast Science, Korea Atomic Energy Research Institute (KAERI), Daejeon, 34057, Republic of Korea
| | - Alekos Segalina
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Doyeong Kim
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Doo-Sik Ahn
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Key Young Oang
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Radiation Center for Ultrafast Science, Korea Atomic Energy Research Institute (KAERI), Daejeon, 34057, Republic of Korea
| | - Sungjun Park
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hyungjun Kim
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hyotcherl Ihee
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon, 34141, Republic of Korea
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
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