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Schram T, Sutar S, Radu I, Asselberghs I. Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109796. [PMID: 36071023 DOI: 10.1002/adma.202109796] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Revised: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Large-area 2D-material-based devices may find applications as sensor or photonics devices or can be incorporated in the back end of line (BEOL) to provide additional functionality. The introduction of highly scaled 2D-based circuits for high-performance logic applications in production is projected to be implemented after the Si-sheet-based CFET devices. Here, a view on the requirements needed for full wafer integration of aggressively scaled 2D-based logic circuits, the status of developments, and the definition of the gaps to be bridged is provided. Today, typical test vehicles for 2D devices are single-sheet devices fully integrated in a lab environment, but transfer to a more scaled device in a fab environment has been demonstrated. This work reviews the status of the module development, including considerations for setting up fab-compatible process routes for single-sheet devices. While further development on key modules is still required, substantial progress is made for MX2 channel growth, high-k dielectric deposition, and contact engineering. Finally, the process requirements for building ultra-scaled stacked nanosheets are also reflected on.
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Affiliation(s)
- Tom Schram
- Imec, kapeldreef 75, Heverlee, B7001, Belgium
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Villamayor MMS, Husain S, Oropesa-Nuñez R, Johansson FOL, Lindblad R, Lourenço P, Bernard R, Witkowski N, Prévot G, Sorgenfrei NLAN, Giangrisostomi E, Föhlisch A, Svedlindh P, Lindblad A, Nyberg T. Wafer-sized WS 2 monolayer deposition by sputtering. NANOSCALE 2022; 14:6331-6338. [PMID: 35297938 DOI: 10.1039/d1nr08375a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 on the substrates is confirmed by Raman spectroscopy since the peak separations between the A1g-E2g and A1g-2LA vibration modes exhibit a gradual increase depending on the number of layers. X-ray diffraction confirms a textured (001) growth of WS2 films. The surface roughness measured with atomic force microscopy is between 1.5 and 3 Å for the ML films. The chemical composition WSx (x = 2.03 ± 0.05) was determined from X-ray Photoelectron Spectroscopy. Transmission electron microscopy was performed on a multilayer film to show the 2D layered structure. A unique method for growing 2D layers directly by sputtering opens up the way for designing 2D materials and batch production of high-uniformity and high-quality (stochiometric, large grain sizes, flatness) WS2 films, which will advance their practical applications in various fields.
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Affiliation(s)
- Michelle Marie S Villamayor
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, Box 65, SE-751 03 Uppsala, Sweden
| | - Sajid Husain
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Reinier Oropesa-Nuñez
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Fredrik O L Johansson
- Division of X-ray Photon Science, Department of Physics & Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden.
| | - Rebecka Lindblad
- Division of Inorganic Chemistry, Department of Chemistry-Ångström, Uppsala University, Box 521, SE-751 20 Uppsala, Sweden
| | - Pedro Lourenço
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Romain Bernard
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Nadine Witkowski
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Geoffroy Prévot
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005, Paris, France
| | - Nomi L A N Sorgenfrei
- Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24/25, 14476 Potsdam, Germany
| | - Erika Giangrisostomi
- Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
| | - Alexander Föhlisch
- Institute for Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Straße 24/25, 14476 Potsdam, Germany
| | - Peter Svedlindh
- Division of Solid State Physics, Department of Materials Science and Engineering, Uppsala University, Box 35, SE-751 03 Uppsala, Sweden
| | - Andreas Lindblad
- Division of X-ray Photon Science, Department of Physics & Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden.
| | - Tomas Nyberg
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, Box 65, SE-751 03 Uppsala, Sweden
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Smith DE, Greenacre VK, Hector AL, Huang R, Levason W, Reid G, Robinson F, Thomas S. Thioether complexes of WSCl4, WOCl4 and WSCl3 and evaluation of thiochloride complexes as CVD precursors for WS2 thin films. Dalton Trans 2020; 49:2496-2504. [DOI: 10.1039/d0dt00068j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Thioether complexes of WECl4 and WECl3 (E = S, O) are prepared and characterised; the dinuclear [(WSCl4)2{iPrS(CH2)2SiPr}] is shown to be an effective single source precursor for low pressure CVD of WS2 thin films.
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Affiliation(s)
| | | | - Andrew L. Hector
- School of Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Ruomeng Huang
- School of Electronics and Computer Science
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - William Levason
- School of Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Gillian Reid
- School of Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Fred Robinson
- School of Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
| | - Shibin Thomas
- School of Chemistry
- University of Southampton
- Southampton SO17 1BJ
- UK
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Okada M, Okada N, Chang WH, Endo T, Ando A, Shimizu T, Kubo T, Miyata Y, Irisawa T. Gas-Source CVD Growth of Atomic Layered WS 2 from WF 6 and H 2S Precursors with High Grain Size Uniformity. Sci Rep 2019; 9:17678. [PMID: 31776373 PMCID: PMC6881408 DOI: 10.1038/s41598-019-54049-6] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2019] [Accepted: 11/07/2019] [Indexed: 11/18/2022] Open
Abstract
Two-dimensional (2D) transition-metal dichalcogenides have attracted a considerable amount of attention because of their potential for post-silicon device applications, as well as for exploring fundamental physics in an ideal 2D system. We tested the chemical vapour deposition (CVD) of WS2 using the gaseous precursors WF6 and H2S, augmented by the Na-assistance method. When Na was present during growth, the process created triangle-shaped WS2 crystals that were 10 μm in size and exhibited semiconducting characteristics. By contrast, the Na-free growth of WS2 resulted in a continuous film with metallic behaviour. These results clearly demonstrate that alkali-metal assistance is valid even in applications of gas-source CVD without oxygen-containing species, where intermediates comprising Na, W, and S can play an important role. We observed that the WS2 crystals grown by gas-source CVD exhibited a narrow size distribution when compared with crystals grown by conventional solid-source CVD, indicating that the crystal nucleation occurred almost simultaneously across the substrate, and that uniform lateral growth was dominant afterwards. This phenomenon was attributed to the suppression of inhomogeneous nucleation through the fast and uniform diffusion of the gas-phase precursors, supported by the Na-assisted suppression of the fast reactions between WF6 and H2S.
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Affiliation(s)
- Mitsuhiro Okada
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Higashi, Tsukuba, Ibaraki, 305-8565, Japan.
| | - Naoya Okada
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan
| | - Wen-Hsin Chang
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-Osawa, Hachioji, Tokyo, 192-0397, Japan
| | - Atsushi Ando
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan
| | - Tetsuo Shimizu
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Higashi, Tsukuba, Ibaraki, 305-8565, Japan
| | - Toshitaka Kubo
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Higashi, Tsukuba, Ibaraki, 305-8565, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, 1-1, Minami-Osawa, Hachioji, Tokyo, 192-0397, Japan
| | - Toshifumi Irisawa
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Umezono, Tsukuba, Ibaraki, 305-8568, Japan.
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