Revealing the competing contributions of charge carriers, excitons, and defects to the non-equilibrium optical properties of ZnO

Single ZnO Nanowire for Electrical and Optical NO2 Gas Sensing: Origin of Reversible and Irreversible Gas Effects Investigated by Photoluminescence Spectroscopy

In this work, the gas sensing properties of a single ZnO nanowire (NW) are investigated, simultaneously in terms of photoluminescence (PL) and photocurrent (PC) response to NO2 gas, with the purpose of giving new insights on the gas sensing mechanism of a single 1D ZnO nanostructure. A single ZnO NW sensing device was fabricated, characterized, and compared with a sample made of bundles of ZnO NWs. UV near-band-edge PL emission spectroscopy was carried out at room temperature and by lowering the temperature down to 77 K, which allows detection of resolved PL peaks related to different excitonic transition regions. Surface effects were observed in PL maps, considering different nano and microstructures. Electrical and optical measurements were acquired at the same time during the NO2 gas exposure, allowing for the comparison of PL and PC response times and signal recovery. During NO2 gas desorption, irreversible behavior in the surface-related and donor-acceptor pair (DAP) regions is interpreted as the effect of an initial transient when electronic transfer from the gas molecules to the bulk occurs through the ZnO NW surface which acts as a channel. To the best of our knowledge, this is the first work which investigates the simultaneous PL optical and PC electrical response signals of a single ZnO NW to gas exposure.

Right On Time: Ultrafast Charge Separation Before Hybrid Exciton Formation

Organic/inorganic hybrid systems offer great potential for novel solar cell design combining the tunability of organic chromophore absorption properties with high charge carrier mobilities of inorganic semiconductors. However, often such material combinations do not show the expected performance: while ZnO, for example, basically exhibits all necessary properties for a successful application in light-harvesting, it was clearly outpaced by TiO2 in terms of charge separation efficiency. The origin of this deficiency has long been debated. This study employs femtosecond time-resolved photoelectron spectroscopy and many-body ab initio calculations to identify and quantify all elementary steps leading to the suppression of charge separation at an exemplary organic/ZnO interface. It is demonstrated that charge separation indeed occurs efficiently on ultrafast (350 fs) timescales, but that electrons are recaptured at the interface on a 100 ps timescale and subsequently trapped in a strongly bound (0.7 eV) hybrid exciton state with a lifetime exceeding 5 µs. Thus, initially successful charge separation is followed by delayed electron capture at the interface, leading to apparently low charge separation efficiencies. This finding provides a sufficiently large time frame for counter-measures in device design to successfully implement specifically ZnO and, moreover, invites material scientists to revisit charge separation in various kinds of previously discarded hybrid systems.

Tailoring p-Type Behavior in ZnO Quantum Dots through Enhanced Sol-Gel Synthesis: Mechanistic Insights into Zinc Vacancies

The synthesis and control of properties of p-type ZnO is crucial for a variety of optoelectronic and spintronic applications; however, it remains challenging due to the control of intrinsic midgap (defect) states. In this study, we demonstrate a synthetic route to yield colloidal ZnO quantum dots (QD) via an enhanced sol-gel process that effectively eliminates the residual intermediate reaction molecules, which would otherwise weaken the excitonic emission. This process supports the creation of ZnO with p-type properties or compensation of inherited n-type defects, primarily due to zinc vacancies under oxygen-rich conditions. The in-depth analysis of carrier recombination in the midgap across several time scales reveals microsecond carrier lifetimes at room temperature which are expected to occur via zinc vacancy defects, supporting the promoted p-type character of the synthesized ZnO QDs.

Disentangling the evolution of electrons and holes in photoexcited ZnO nanoparticles

The evolution of charge carriers in photoexcited room temperature ZnO nanoparticles in solution is investigated using ultrafast ultraviolet photoluminescence spectroscopy, ultrafast Zn K-edge absorption spectroscopy, and ab initio molecular dynamics (MD) simulations. The photoluminescence is excited at 4.66 eV, well above the band edge, and shows that electron cooling in the conduction band and exciton formation occur in <500 fs, in excellent agreement with theoretical predictions. The x-ray absorption measurements, obtained upon excitation close to the band edge at 3.49 eV, are sensitive to the migration and trapping of holes. They reveal that the 2 ps transient largely reproduces the previously reported transient obtained at 100 ps time delay in synchrotron studies. In addition, the x-ray absorption signal is found to rise in ∼1.4 ps, which we attribute to the diffusion of holes through the lattice prior to their trapping at singly charged oxygen vacancies. Indeed, the MD simulations show that impulsive trapping of holes induces an ultrafast expansion of the cage of Zn atoms in <200 fs, followed by an oscillatory response at a frequency of ∼100 cm-1, which corresponds to a phonon mode of the system involving the Zn sub-lattice.

Hematite Photoanodes for Water Oxidation: Electronic Transitions, Carrier Dynamics, and Surface Energetics

We review the current understanding of charge carriers in model hematite photoanodes at different stages. The origin of charge carriers is discussed based on the electronic structure and absorption features, highlighting the controversial assignment of the electronic transitions near the absorption edge. Next, the dynamic evolution of charge carriers is analyzed both on the ultrafast and on the surface reaction timescales, with special emphasis on the arguable spectroscopic assignment of electrons/holes and their kinetics. Further, the competitive charge transfer centers at the solid-liquid interface are reviewed, and the chemical nature of relevant surface states is updated. Finally, an overview on the function of widely employed surface cocatalysts is given to illustrate the complex influence of physiochemical modifications on the charge carrier dynamics. The understanding of charge carriers from their origin all the way to their interfacial transfer is vital for the future of photoanode design.

Time-Domain Observation of Spectral Diffusion in Defective ZnO

Defects can affect all aspects of materials by altering their electronic structures and mediating the carrier dynamics. However, in the past decades, most research efforts were restricted to nonstoichiometric defects, while the effects of high-density defects on the carrier dynamics of semiconductors remained elusive. In this work, using transient absorption spectroscopy, we have observed for the first time a hybrid carrier relaxation dynamics with the feature of a Poisson-like retard shoulder in a time-domain profile in highly defective ZnO crystals. This novel behavior has been attributed to the spectral diffusion within continuum defect states, which is further confirmed by a proposed diffusion (in energy space) controlled carrier dynamic model. Our results thus reveal an alternative energy decay channel in highly defective crystals and may provide a new route for defect engineering.

Ultrafast generation and decay of a surface metal

Band bending at semiconductor surfaces induced by chemical doping or electric fields can create metallic surfaces with properties not found in the bulk, such as high electron mobility, magnetism or superconductivity. Optical generation of such metallic surfaces on ultrafast timescales would be appealing for high-speed electronics. Here, we demonstrate the ultrafast generation of a metal at the (10-10) surface of ZnO upon photoexcitation. Compared to hitherto known ultrafast photoinduced semiconductor-to-metal transitions that occur in the bulk of inorganic semiconductors, the metallization of the ZnO surface is launched by 3-4 orders of magnitude lower photon fluxes. Using time- and angle-resolved photoelectron spectroscopy, we show that the phase transition is caused by photoinduced downward surface band bending due to photodepletion of donor-type deep surface defects. The discovered mechanism is in analogy to chemical doping of semiconductor surfaces and presents a general route for controlling surface-confined metallicity on ultrafast timescales.

On-Surface Chemistry Induced by Long-Lived Excitons: (NO)2 Dissociation on C60

Solid-state excitonic excitations play an increasingly important role in optoelectronic and light harvesting processes due to their ubiquitous presence in dipolar two-dimensional materials. Here we show that long-lived solid-state excitons induce chemical reactions in adsorbed molecules and thus convert light into chemical energy. For the model system (NO)₂ dimer adsorbed on ordered c(4×4) C₆₀ films, time-of-flight measurements following UV laser excitation reveal a slow and a fast dissociative desorption channel, which are assigned to intersystem crossing and internal conversion, respectively, by time-dependent density functional theory calculations.

Random temporal laser speckles for the robust measurement of sub-microsecond photoluminescence decay

Time-resolved photoluminescence (PL) is commonly used to track dynamics in a broad range of materials. Thus, the search for simplification of the acquisition of PL kinetics attracts continuous attention. This paper presents a new robust and straightforward approach to the measurement of PL decay, which is based on randomly fluctuating excitation intensity. The random excitation waveform is attained by using laser speckles generated on a rotating diffuser. Owing to this, the presented technique is able to utilize any coherent excitation source without the necessity to generate short pulses or to controllably modulate the light. PL decay can be computationally reconstructed from the Fourier image of the PL trace. The paper demonstrates the performance of the method, which is able to acquire sub-microsecond dynamics as the impulse response function reaches 300 ns. The reconstructed PL decays were compared to streak camera measurements to verify the method. Finally, potential limitations and applications of the technique are discussed.