Facile synthesis of manganese (II)-doped ZnSe nanocrystals with controlled dimensionality

Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.

Materials and design strategies for stretchable electroluminescent devices

Stretchable displays have recently received increasing attention as input and/or output interfaces for next-generation human-friendly electronic systems. Stretchable electroluminescent (EL) devices are a core component of stretchable displays, and they can be classified into two types, structurally stretchable EL devices and intrinsically stretchable EL devices, according to the mechanism for achieving their stretchability. We herein present recent advances in materials and design strategies for stretchable EL devices. First, stretchable devices based on ultrathin EL devices are introduced. Ultrathin EL devices are mechanically flexible like thin paper, and they can become stretchable through various structural engineering methods, such as inducing a buckled structure, employing interconnects with stretchable geometries, and applying origami/kirigami techniques. Secondly, intrinsically stretchable EL devices can be fabricated by using inherently stretchable electronic materials. For example, light-emitting electrochemical cells and EL devices with a simpler structure using alternating current have been developed. Furthermore, novel stretchable semiconductor materials have been presented for the development of intrinsically stretchable light-emitting diodes. After discussing these two types of stretchable EL devices, we briefly discuss applications of deformable EL devices and conclude the review.

Comparative Studies of Blue-Emitting Zinc Selenide Nanocrystals Doped with Ag, Cu, and Mg towards Medical Applications

Blue-emitting Ag(+)-, Cu(2+)-, and Mg(2+)-doped ZnSe nanoparticles (NPs) were successfully synthesized at 80 °C by the precipitation method by using mercaptopropionic acid (MPA) as a stabilizer. UV–visible and photoluminescence (PL) studies were applied to investigate their physicochemical properties. Their structural properties were confirmed by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) and transmission electron microscopy (TEM). The size of the ZnSe: X-capped MPA showed a strong relationship with dopant metals. The diameters of the Mg-doped ZnSe and the Cu-doped ZnSe were 22–24 nm, while the Ag-doped ZnSe was halved, at about 13 nm. The photoluminescence was within a wavelength range of 400–550 nm. In addition, the PL intensities, as well as the photoluminescence quantum yields, were in the order of the decreasing ionic radii of the dopant metals (ZnSe:Ag < ZnSe:Mg < ZnSe:Cu). Furthermore, through the interaction with lysine, the PL intensity of the ZnSe:X was changed. Interestingly, the capacity of the ZnSe:Mg for lysine was significantly higher than that of other dopant metals. Moreover, the toxicity of the ZnSe:Mg was relatively insignificant toward the hMSCs (about 80% cell viability at 320 ppm), compared to the transition-metal dopant. Therefore, the ZnSe:Mg material could have great potential for bioapplications.

Fine tuning for success in structure-based virtual screening

Structure-based virtual screening plays a significant role in drug-discovery. The method virtually docks millions of compounds from corporate or public libraries into a binding site of a disease-related protein structure, allowing for the selection of a small list of potential ligands for experimental testing. Many algorithms are available for docking and assessing the affinity of compounds for a targeted protein site. The performance of affinity estimation calculations is highly dependent on the size and nature of the site, therefore a rationale for selecting the best protocol is required. To address this issue, we have developed an automated calibration process, implemented in a Knime workflow. It consists of four steps: preparation of a protein test set with structures and models of the target, preparation of a compound test set with target-related ligands and decoys, automatic test of 24 scoring/rescoring protocols for each target structure and model, and graphical display of results. The automation of the process combined with execution on high performance computing resources greatly reduces the duration of the calibration phase, and the test of many combinations of algorithms on various target conformations results in a rational and optimal choice of the best protocol. Here, we present this tool and exemplify its application in setting-up an optimal protocol for SBVS against Retinoid X Receptor alpha.

Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

With a direct bandgap, two-dimensional (2D) ZnSe is a promising semiconductor material in photoelectric device fields. In this work, based on first-principles methods, we theoretically studied the modulation of the Schottky barrier height (SBH) by applying horizontal and vertical strains on graphene/ZnSe heterojunction. The results show that the inherent electronic properties of graphene and ZnSe monolayers are both well-conserved because of the weak van der Waals (vdW) forces between two sublayers. Under horizontal strain condition, the n(p)-type SBH decreases from 0.56 (1.62) eV to 0.21 (0.78) eV. By changing the interlayer distance in the range of 2.8 Å to 4.4 Å, the n(p)-type SBH decreases (increases) from 0.88 (0.98) eV to 0.21 (1.76) eV. These findings prove the SBH of the heterojunction to be tuned effectively, which is of great significance to optoelectronic devices, especially in graphene/ZnSe-based nano-electronic and optoelectronic devices.