Symmetry breaking in the Stark Control of Electrons at Interfaces (SCELI)

Stark control of electrons across the molecule-semiconductor interface

Controlling matter at the level of electrons using ultrafast laser sources represents an important challenge for science and technology. Recently, we introduced a general laser control scheme (the Stark control of electrons at interfaces or SCELI) based on the Stark effect that uses the subcycle structure of light to manipulate electron dynamics at semiconductor interfaces [A. Garzón-Ramírez and I. Franco, Phys. Rev. B 98, 121305 (2018)]. Here, we demonstrate that SCELI is also of general applicability in molecule-semiconductor interfaces. We do so by following the quantum dynamics induced by non-resonant few-cycle laser pulses of intermediate intensity (non-perturbative but non-ionizing) across model molecule-semiconductor interfaces of varying level alignments. We show that SCELI induces interfacial charge transfer regardless of the energy level alignment of the interface and even in situations where charge exchange is forbidden via resonant photoexcitation. We further show that the SCELI rate of charge transfer is faster than those offered by resonant photoexcitation routes as it is controlled by the subcycle structure of light. The results underscore the general applicability of SCELI to manipulate electron dynamics at interfaces on ultrafast timescales.

Light-field control of real and virtual charge carriers

Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real^1-4. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption^5-8, but photocurrent generation may stem from real as well as virtual charge carriers^9-14. However, a link between the generation of the carrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold-graphene-gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold-graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality^15,16.

Electronic Coherence and Coherent Dephasing in the Optical Control of Electrons in Graphene

Electronic coherence is of utmost importance for the access and control of quantum-mechanical solid-state properties. Using a purely electronic observable, the photocurrent, we measure a lower bound of the electronic coherence time of 22 ± 4 fs in graphene. The photocurrent is ideally suited to measure electronic coherence, as it is a direct result of coherent quantum-path interference, controlled by the delay between two ultrashort two-color laser pulses. The maximum delay for which interference between the population amplitude injected by the first pulse interferes with that generated by the second pulse determines the electronic coherence time. In particular, numerical simulations reveal that the experimental data yields a lower bound on the electronic coherence time, masked by coherent dephasing due to the broadband absorption in graphene. We expect that our results will significantly advance the understanding of coherent quantum control in solid-state systems ranging from excitation with weak fields to strongly driven systems.

Carrier-Envelope-Phase Modulated Currents in Scanning Tunneling Microscopy

Carrier-envelope-phase (CEP) stable optical pulses combined with state-of-the-art scanning tunneling microscopy (STM) can track and control ultrafast electronic tunneling currents. On the basis of nonequilibrium Green's function formalism, we present a time and frequency domain theoretical study of CEP-stable pulse-induced tunneling currents between an STM tip and a metal substrate. It is revealed that the experimentally observed phase shift between the maximum tunneling current and maximum electric field is caused by the third-order response to the electric field. The shift is also found to be sensitive to the duration of pulses. The tunneling process can thus be precisely manipulated by varying the phase and duration of these pulses.

Tracking Electron Dynamics of Single Molecules in Scanning Tunneling Microscopy Junctions with Laser Pulses

On the basis of real-time simulations, we devise a method to extend the capability of scanning tunneling microscopy (STM) to track the electronic dynamics of molecules on a material's surface with the ultrafast temporal resolution of laser pulses. The intrinsic mechanism of visualization of electronic dynamics by measuring tunneling charge is attributed to the interference between the electronic oscillations stimulated by pump and probe pulses. The charge-transfer rate from molecule to the surrounding environment can be estimated with the decay time of electronic dynamics, which can also be detected by measuring the tunneling charge across the STM junction. Moreover, it is found that the tunneling charge can be varied precisely by changing the carrier-envelope phase (CEP) of the pulses, and this phase-dependence of tunnelling diminishes as the duration of incident laser pulses increases. The proposed scheme provides an alternative means for visualization of electron dynamics of single molecules by measuring tunnelling charges.