Stacking-configuration-enriched essential properties of bilayer graphenes and silicenes

A detailed study of the electronic and optical properties of germanium nanotubes

We employed first-principles calculations to investigate the electronic and optical properties of germanene nanotubes (GeNTs). Significant multi-orbital hybridizations lead to metallic and semiconducting behaviors in small-sized armchair and zigzag GeNTs, respectively. The changes in band gaps and subband dispersions with increasing diameter have been thoroughly understood by analyzing spatial charge densities and projected density of states. The optical absorption spectra exhibit diameter-dependent anisotropy and suggest a dimensional transition beyond a critical diameter. This comprehensive study not only deepens our understanding of GeNTs but also reveals new possibilities for various nanotechnology applications.

Tunable Electronic Properties of Two-Dimensional GaSe1-xTex Alloys

In this work, we performed a theoretical study on the electronic properties of monolayer GaSe1-xTex alloys using the first-principles calculations. The substitution of Se by Te results in the modification of a geometric structure, charge redistribution, and bandgap variation. These remarkable effects originate from the complex orbital hybridizations. We demonstrate that the energy bands, the spatial charge density, and the projected density of states (PDOS) of this alloy are strongly dependent on the substituted Te concentration.

Electronic and optical properties of graphene, silicene, germanene, and their semi-hydrogenated systems

We investigate the geometric, electric, and optical properties of two-dimensional honeycomb lattices using first-principles simulations. The main focus of this work is on the similarities and differences in their characteristics, as well as the delicate connection of orbital hybridizations and spin-polarizations with electronic and optical properties. Graphene, silicene, germanene, and their semi-hydrogenated systems, in turn, display sp2, sp2-sp3, and sp3s hybridizations. These bonding configurations are critical factors affecting the geometric structure, the electronic band structure, van Hove singularities in density of states, the magnetic configurations, the dielectric functions, and energy loss functions. Furthermore, the meta-stable and stable exciton states are expected to survive in pristine and semi-hydrogenated group IV monolayers, respectively. The theoretical predictions established in this work are important not only for basic science but also for high-tech applications.

Feature-Rich Electronic Properties of Sliding Bilayer Germanene

This study employs first-principles calculations to elucidate the properties of sliding bilayer germanene (BLGe). The buckled structure of germanene can afford a greater number of metastable stacking configurations than planar graphene and enrich the electronic properties. Herein, a detailed analysis of the structural variety, shift-dependent energy bands, and spatial charge densities of BLGe is presented. The projected density of states (PDOS) reveals diverse structures such as plateaus, dips, symmetric/asymmetric peaks, and shoulders. The low-lying ones of the prominent structures could correspond to single or multiorbital hybridization, depending on the stacking configuration.

Essential Electronic Properties of Silicon Nanotubes

In this work, the various electronic properties of silicon nanotubes (SiNTs) were investigated by the density functional theory. The cooperative and competitive relationships between the chiral angle, periodic boundary conditions, and multi-orbital hybridizations create unusual narrow gaps and quasi-flat bands in the ultra-small armchair and zigzag tubes, respectively. The features varied dramatically with tube radii. Armchair SiNTs (aSiNTs) have an indirect-to-direct band gap transition as their radius is increased to a particular value, while zigzag SiNTs (zSiNTs) present a metal-semiconductor transition. The projected density of states was used to elucidate the critical transitions, and the evolution of p and s orbital mixing states during the process are discussed in detail. The information presented here provides a better understanding of the essential properties of SiNTs.