Quantum cutting-induced near-infrared luminescence of Yb3+ and Er3+ in a layer structured perovskite film

Near-Infrared Light Emitting Metal Halides: Materials, Mechanisms, and Applications

Near-Infrared (NIR) light emitting metal halides are emerging as a new generation of optical materials owing to their appealing features, which include low-cost synthesis, solution processability, and adjustable optical properties. NIR-emitting perovskite-based light-emitting diodes (LEDs) have reached an external quantum efficiency (EQE) of over 20% and a device stability of over 10,000 h. Such results have sparked an interest in exploring new NIR metal halide emitters. In this review, several different types of NIR-emitting metal halides, including lead/tin bromide/iodide perovskites, lanthanide ions doped/based metal halides, double perovskites, low dimensional hybrid and Bi3+/Sb3+/Cr3+ doped metal halides, are summarized, and their recent advancement is assessed. The characteristics and mechanisms of narrow-band or broadband NIR luminescence in all these materials are discussed in detail. Also, the various applications of NIR-emitting metal halides are highlighted and an outlook for the field is provided.

Realization of 1.54-µm Light-Emitting Diodes Based on Er3+ /Yb3+ Co-Doped CsPbCl3 Films

Erbium ions (Er³⁺ , 1.54 µm) electric pumped light sources with excellent optical properties and a simple fabrication process are urgently desired to satisfy the development of silicon-based integration photonics. The previous Er-based electroluminescence devices are mainly based on Er-complexes or Er-doped oxide compounds, which usually suffer from low external quantum efficiency(EQE)or high applied voltage etc. In this work, a novel type of Er³⁺ /Yb³⁺ co-doped lead-halide perovskite films (Er³⁺ /Yb³⁺ :CsPbCl₃ ) with the maximum photoluminescence quantum yield of 30.12% are prepared by a simple two-step solution-coating method and the corresponding light emitting diodes (Er-PeLEDs) are fabricated, which demonstrate an almost pure 1.54-µm emission and a peak EQE up to 0.366% at a low applied voltage of 1.4 V. Strong negative thermal quenching effect may help Er-PeLEDs suppress Joule heating quenching. These excellent LED properties benefit mainly from the outstanding regulatory performance of acetate to perovskite films, the excellent semiconductor behavior and strong ionic property of the perovskite, and the involvement of Yb³⁺ ions, which can directly and efficiently transfer the exciton energy to Er³⁺ through a quantum cutting process. Overall, the realization of 1.54-µm Er-PeLEDs offers new opportunities for silicon-based integrated light sources.

Förster and nanometal surface-energy transfer in CsPbCl3/Yb3+ quantum-cutting multilayer structures

Recently, in nanophotonics, thin metal films owing to the plasmon modes they support and their perovskite nanostructures exhibit novel optical properties, which have attracted considerable interest. Both the Förster resonant energy transfer (FRET) of the dopant-induced right-angled Yb³⁺-V_Pb-Yb³⁺ defect state and a pair of Yb³⁺ ions in all-inorganic perovskite nanocrystal (PeNC) CsPbCl₃:Yb³⁺ quantum-cutting (QC) materials and the nanometal surface-energy transfer (NSET) of the excitons of PeNC-Ag nanoparticles (NPs) were investigated experimentally in CsPbCl₃:Yb³⁺/PMMA/Ag/Si (CYA_ii = 1, 2, 3, 4, 5, 6), CsPbCl₃:Yb³⁺/PMMA/Si (CY_i), and CsPbCl₃/PMMA/Ag/Si (CA_i), representing three species of multilayer structures. It was found that due to the mediation of the Ag film and an increase in the interaction volume of donors-acceptors, FRET efficiencies increased from 26% to 66% as the spacer (or wave-guiding layer) thicknesses decreased from 63.7 to 17.8 nm. The energy-transfer efficiencies of CA_i in the NSET in the surface-surface scheme followed a d^-1.6-distance dependence. This distance dependence approached the d^-2-distance dependence expected of a point-to-surface or 0D-2D energy transfer (ET). The ET in quantum cutting (QC) modulated by plasmons undoubtedly paves a way for improving the FRET and NSET performances of materials.

Emerging doping strategies in two-dimensional hybrid perovskite semiconductors for cutting edge optoelectronics applications

The past decade has witnessed tremendous progress in metal halide perovskites, particularly in lead (Pb) halide perovskites, because of their extraordinary performance in cutting-edge optoelectronic devices. However, the toxicity of Pb and the environmental stability of the perovskites are two major issues that this field is currently facing. In recent years, 2D layered perovskites have emerged as a promising alternative to the traditional 3D perovskites due to their structural flexibility and higher environmental stability, though they lack the desired level of device efficiency. Doping with target ions can drastically tune the crystal structure, optical properties, charge recombination dynamics, and electronic properties of the 2D perovskite. Although the field of doping in 2D perovskites has seen substantial growth in recent times, no comprehensive review is available on the recent advances in doping of 2D perovskites and its effect on the optoelectronic properties. In this review, we summarize the progress in doping in 2D perovskites based on different doping sites including progress in different synthesis strategies and their impact on crystal structures and various optoelectronic properties. We then highlight the recent achievements in doped 2D perovskites for photovoltaic, LED and other emerging applications. Finally, we conclude with the challenges and the future scope in the doping studies of 2D layered perovskites, which need to be addressed for further developments of next-generation 2D perovskite-based optoelectronic devices.