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Huang F, Xiong M, Zhou J, Yang T. Assembly-inspired multiferroicity with nontrivial Chern insulating phase from exohedral metallofullerenes. J Chem Phys 2024; 160:184302. [PMID: 38726934 DOI: 10.1063/5.0204612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 04/25/2024] [Indexed: 05/24/2024] Open
Abstract
Fullerene-assembled low-dimensional materials have been experimentally realized in polymorphic forms and have attracted significant interest very recently. Here, we predict a two-dimensional (2D) honeycomb lattice material TM2(C60)3 (TM = Cr, Mo, and W) assembled from exohedral metallofullerene clusters TM(C60)3 that could exhibit planar triangular geometries. According to first-principles calculations combined with Monte Carlo simulations, we suggest that these 2D assembled materials exhibit various exotic physical properties, including ferromagnetism, ferroelectricity, and quantum anomalous Hall effect. Interestingly, mechanical strains could effectively tune their magnetic moments and switch the conducting spin channel of the Dirac bands at the Fermi level. Our work provides a new cluster-assembly design strategy toward cluster-assembled 2D materials based on fullerene characters.
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Affiliation(s)
- Feiyang Huang
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049 Shaanxi, China
| | - Mo Xiong
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049 Shaanxi, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China
| | - Tao Yang
- MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049 Shaanxi, China
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Mao GQ, Yan ZY, Xue KH, Ai Z, Yang S, Cui H, Yuan JH, Ren TL, Miao X. DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:403001. [PMID: 35856860 DOI: 10.1088/1361-648x/ac829d] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Accepted: 07/20/2022] [Indexed: 06/15/2023]
Abstract
It is known that the Kohn-Sham eigenvalues do not characterize experimental excitation energies directly, and the band gap of a semiconductor is typically underestimated by local density approximation (LDA) of density functional theory (DFT). An embarrassing situation is that one usually uses LDA+Ufor strongly correlated materials with rectified band gaps, but for non-strongly-correlated semiconductors one has to resort to expensive methods like hybrid functionals orGW. In spite of the state-of-the-art meta-generalized gradient approximation functionals like TB-mBJ and SCAN, methods with LDA-level complexity to rectify the semiconductor band gaps are in high demand. DFT-1/2 stands as a feasible approach and has been more widely used in recent years. In this work we give a detailed derivation of the Slater half occupation technique, and review the assumptions made by DFT-1/2 in semiconductor band structure calculations. In particular, the self-energy potential approach is verified through mathematical derivations. The aims, features and principles of shell DFT-1/2 for covalent semiconductors are also accounted for in great detail. Other developments of DFT-1/2 including conduction band correction, DFT+A-1/2, empirical formula for the self-energy potential cutoff radius, etc, are further reviewed. The relations of DFT-1/2 to hybrid functional, sX-LDA,GW, self-interaction correction, scissor's operator as well as DFT+Uare explained. Applications, issues and limitations of DFT-1/2 are comprehensively included in this review.
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Affiliation(s)
- Ge-Qi Mao
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, People's Republic of China
| | - Zhao-Yi Yan
- School of Integrated Circuits, Tsinghua University, Beijing 100084, People's Republic of China
| | - Kan-Hao Xue
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, People's Republic of China
| | - Zhengwei Ai
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, People's Republic of China
| | - Shengxin Yang
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, People's Republic of China
| | - Hanli Cui
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Jun-Hui Yuan
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, People's Republic of China
| | - Tian-Ling Ren
- School of Integrated Circuits, Tsinghua University, Beijing 100084, People's Republic of China
| | - Xiangshui Miao
- School of Integrated Circuits, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan 430205, People's Republic of China
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