Different photocurrent response of Cs4PbBr6 particles

One-Step Fabrication of 0D Cs4PbBr6 Perovskite with Nonlinear Optical Properties for Ultrafast Pulse Generation

Low-dimensional lead halide perovskites demonstrate remarkable nonlinear optical characteristics attributed to their distinctive physical structures and electronic properties. Nevertheless, the investigation into their nonlinear optical properties remains in its incipient stages. This study addresses this gap by precisely controlling solvent volumes to synthesize both 0D Cs4PbBr6 and Cs4PbBr6/CsPbBr3 perovskites. Remarkably, as saturable absorbers, both pure Cs4PbBr6 and Cs4PbBr6/CsPbBr3 composites exhibit favorable nonlinear optical properties within the C-band, showcasing modulation depths of 9.22% and 16.83%, respectively. Moreover, for the first time, Cs4PbBr6 and Cs4PbBr6/CsPbBr3 composites have been successfully integrated into erbium-doped fiber lasers to realize the mode-locking operations. The utilization of the Cs4PbBr6/CsPbBr3 composites as a saturable absorber that enables the generation of conventional soliton mode-locked laser pulses with a pulse duration of 688 fs, and a repetition frequency of 10.947 MHz at a central wavelength of 1557 nm. Cs4PbBr6 is instrumental in generating laser pulses at a frequency of 10.899 MHz, producing pulse widths of 642 fs at the central wavelength of 1531.2 nm and 1.02 ps at the central wavelength of 1565.3 nm, respectively. The findings of this investigation underscore the potential utility of 0D Cs4PbBr6 and Cs4PbBr6/CsPbBr3 composites as promising materials for optical modulation within fiber laser applications.

Tunable Emissive CsPbBr3/Cs4PbBr6 Quantum Dots Engineered by Discrete Phase Transformation for Enhanced Photogating in Field-Effect Phototransistors

Precise control of quantum structures in hybrid nanocrystals requires advancements in scientific methodologies. Here, on the design of tunable CsPbBr3/Cs4PbBr6 quantum dots are reported by developing a unique discrete phase transformation approach in Cs4PbBr6 nanocrystals. Unlike conventional hybrid systems that emit solely in the green region, this current strategy produces adjustable luminescence in the blue (450 nm), cyan (480 nm), and green (510 nm) regions with high photoluminescence quantum yields up to 45%, 60%, and 85%, respectively. Concentration-dependent studies reveal that phase transformation mechanisms and the factors that drive CsBr removal occur at lower dilutions while the dissolution-recrystallization process dominates at higher dilutions. When the polymer-CsPbBr3/Cs4PbBr6 integrated into a field-effected transistor the resulting phototransistors featured enhanced photosensitivity exceeding 105, being the highest reported for an n-type phototransistor, while maintaining good transistor performances as compared to devices consisting of polymer-CsPbBr3 NCs.