Synthesis, crystal polymorphism and spin crossover behavior of adamantylboron-capped cobalt(II) hexachloroclathrochelate and its transformation into the CoIIICoIICoIII-bis-macrobicyclic derivative

Fast crystallization of the monoclathrochelate cobalt(II) intracomplex [Co(Cl₂Gm)₃(BAd)₂] (where Cl₂Gm^2- is a dichloroglyoxime dianion and BAd is an adamantylboron capping group, 1), initially obtained by the direct template condensation of the corresponding chelating α-dioximate and cross-linking ligand synthons on the Co²⁺ ion as a matrix, from benzene or dichloromethane afforded its structural triclinic and hexagonal polymorphs. Its prolonged recrystallization from dichloromethane under air atmosphere and sunlight irradiation unexpectedly gave the crystals of the Co^IIICo^IICo^III-trinuclear dodecachloro-bis-clathrochelate intracomplex [[Co^III(Cl₂Gm)₃(BAd)]₂Co^II] (2), the molecule of which consists of two macrobicyclic frameworks with encapsulated low-spin (LS) Co³⁺ ions, which are cross-linked by a μ₃-bridging Co²⁺ ion as a bifunctional Lewis-acidic center. The most plausible pathway of such a 1 → 2 transformation is based on the photoinitiated radical oxidation of dichloromethane with air oxygen giving the reactive species. Cobalt(II) monoclathrochelate 1 was found to undergo a temperature-induced spin crossover (SCO) both in its solutions and in the solid state. In spite of the conformational rigidity of the corresponding quasiaromatic diboron-capped tris-α-dioximate framework, the main parameters of this SCO transition (i.e., its completeness and gradual character) are strongly affected by the nature of the used solvent (in the case of its solutions) and by the structural polymorphism of its crystals (in the solid state). In the latter case, the LS state (S = 1/2) of this complex is more thermally stable and, therefore, the cobalt(II)-centered 1/2 → 3/2 SCO is more gradual than that in solutions.

Molecular Compounds in Spintronic Devices: An Intricate Marriage of Chemistry and Physics

Spintronics, a flourishing new field of microelectronics, uses the electron spin for reading and writing information in modern computers and other spintronic devices with a low power consumption and high reliability. In a quest to increase the productivity of such devices, the use of molecular materials as a spacer layer allowed them to perform equally well or even better than conventional all-inorganic heterostructures from metals, alloys, or inorganic semiconductors. In this review, we survey various classes of chemical compounds that have already been tested for this purpose─from organic compounds and coordination complexes to organic-inorganic hybrid materials─since the creation of the first molecule-based spintronic device in 2002. Although each class has its advantages, drawbacks, and applications in molecular spintronics, together they allowed nonchemists to gain insights into spin-related effects and to propose new concepts in the design and fabrication of highly efficient spintronic devices. Other molecular compounds that chemistry could offer in great numbers may soon emerge as suitable spacers or even electrodes in flexible magnetic field sensors, nonvolatile memories, and multifunctional spintronic devices.

Iron(II) Clathrochelates in Molecular Spintronic Devices: A Vertical Spin Valve

Abstract

The thermal sublimation of the known cage iron(II) complex (clathrochelate) gives thin films of this compound on various supports without violating its integrity as shown by electron spectroscopy. The spin state of the complex remains unchanged compared to the polycrystalline sample and solution. The first prototypes of molecular spintronic devices in the form of a vertical spin valve are prepared from the chosen iron(II) clathrochelate, and their electron transport properties are studied.

Synthesis, structure, magnetic properties and thermal behaviour of Ba–MII (MII = Mn, Co, Cu, and Zn) allylmalonates

A series of Ba-MII complexes with allylmalonic acid anions [BaMII(Amal)2(H2O)3]n (MII = Mn, Co, Cu, and Zn) were synthesized. The magnetic measurements revealed slow magnetic relaxation in non-zero field (HDC = 1500 Oe) for CoII ions.