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Xia W, Wu J, Xia C, Li Z, Yuan J, An C, Liu X, Wang X, Yu N, Zou Z, Liu G, Feng J, Zhang L, Dong Z, Chen B, Yang Z, Yu Z, Chen H, Guo Y. Pressure-Induced Re-Entrant Superconductivity in Transition Metal Dichalcogenide TiSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402749. [PMID: 39031112 DOI: 10.1002/smll.202402749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Revised: 06/21/2024] [Indexed: 07/22/2024]
Abstract
Transition metal dichalcogenide TiSe2 exhibits a superconducting dome within a low pressure range of 2-4 GPa, which peaks with the maximal transition temperature Tc of ≈1.8 K. Here it is reported that applying high pressure induces a new superconducting state in TiSe2, which starts at ≈16 GPa with a substantially higher Tc that reaches 5.6 K at ≈21.5 GPa with no sign of decline. Combining high-throughput first-principles structure search, X-ray diffraction, and Raman spectroscopy measurements up to 30 GPa, It is found that TiSe2 undergoes a first-order structural transition from the 1T phase under ambient pressure to a new 4O phase under high pressure. Comparative ab initio calculations reveal that while the conventional phonon-mediated pairing mechanism may account for the superconductivity observed in 1T-TiSe2 under low pressure, the electron-phonon coupling of 4O-TiSe2 is too weak to induce a superconducting state whose transition temperature is as high as 5.6 K under high pressure. The new superconducting state found in pressurized TiSe2 requires further study on its underlying mechanism.
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Affiliation(s)
- Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
| | - Jiaxuan Wu
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200122, China
| | - Chengliang Xia
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200122, China
| | - Zhongyang Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
| | - Jian Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Chao An
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Xiangqi Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Xia Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Na Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Zhiqiang Zou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Gang Liu
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
| | - Jiajia Feng
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
| | - Lili Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Zhaohui Dong
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China
| | - Zhaorong Yang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China
| | - Zhenhai Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Hanghui Chen
- NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200122, China
- Department of Physics, New York University, New York, 10012, USA
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
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Jiang X, Zhang S, Jiang D, Wang Y, Molokeev MS, Wang N, Liu Y, Zhang X, Lin Z. Unexpected giant negative area compressibility in palladium diselenide. Natl Sci Rev 2023; 10:nwad016. [PMID: 37565197 PMCID: PMC10411663 DOI: 10.1093/nsr/nwad016] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Revised: 12/04/2022] [Accepted: 12/11/2022] [Indexed: 08/12/2023] Open
Abstract
Negative area compressibility (NAC) is a counterintuitive 'squeeze-expand' behavior in solids that is very rare but attractive due to possible pressure-response applications and coupling with rich physicochemical properties. Herein, NAC behavior is reported in palladium diselenide with a large magnitude and wide pressure range. We discover that, apart from the rigid flattening of layers that has been generally recognized, the unexpected giant NAC effect in PdSe2 largely comes from anomalous elongation of intralayer chemical bonds. Both structural variations are driven by intralayer-to-interlayer charge transfer with enhanced interlayer interactions under pressure. Our work updates the mechanical understanding of this anomaly and establishes a new guideline to explore novel compression-induced properties.
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Affiliation(s)
- Xingxing Jiang
- New Functional Crystals Group, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shengzi Zhang
- New Functional Crystals Group, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dequan Jiang
- Center for High Pressure Science & Technology Advanced Research, Beijing 100094, China
| | - Yonggang Wang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Maxim S Molokeev
- Laboratory of Crystal Physics, Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russia
- Department of Physics, Far Eastern State Transport University, Khabarovsk 680021, Russia
- International Research Center of Spectroscopy and Quantum Chemistry, Siberian Federal University, Krasnoyarsk 660041, Russia
| | - Naizheng Wang
- New Functional Crystals Group, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Youquan Liu
- New Functional Crystals Group, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xingyu Zhang
- New Functional Crystals Group, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zheshuai Lin
- New Functional Crystals Group, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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Chen RY, Wang NL. Progress in Cr- and Mn-based superconductors: a key issues review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:012503. [PMID: 30523906 DOI: 10.1088/1361-6633/aaed0d] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The presence of magnetic ions was first believed to be detrimental to superconductivity. However, unconventional superconductivity has been widely induced by doping or applying external pressure in magnetic systems such as heavy fermion, cuprate and iron-based superconductors in which magnetic fluctuations are suggested to serve as the pairing glue for Cooper pairs. The discovery of superconductivity in the magnetic compounds CrAs and MnP under high pressures has further expanded this family of superconductors and provided new platforms for investigating the interplay between magnetism and superconductivity. CrAs and MnP represent the first superconductors among the transition metal Cr- and Mn-based compounds in which the electronic states near the Fermi level are dominated by Cr/Mn 3d electrons. Shortly after their discovery, new types of Cr-based quasi-one-dimensional superconductors A2Cr3As3 and ACr3As3 (A [Formula: see text] K, Rb, Cs or Na) were discovered at ambient pressure. The close proximity of superconductivity to magnetic instability in these systems suggests that spin fluctuations may play crucial roles in mediating the Cooper pairing. In this article we review the basic physical properties of these novel superconductors and the progress achieved in recent studies.
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Affiliation(s)
- R Y Chen
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, People's Republic of China
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Yu Z, Wu W, Lu P, Zhao J, Cheng J, Hu Q, Yuan Y, Li X, Pei C, Chen F, Yan Z, Yan S, Yang K, Sun J, Luo J, Wang L. Structural evolution behavior of manganese monophosphide under high pressure: experimental and theoretical study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:254002. [PMID: 28537223 DOI: 10.1088/1361-648x/aa6554] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The influence of external pressure on the structural properties of manganese monophosphides (MnP) at room temperature has been studied using in situ angle dispersive synchrotron x-ray powder diffraction (AD-XRD) with a diamond anvil cell. The crystal structure of MnP is stable between 0 to 15 GPa. However, the compressibility of b-axis is much larger than those of a- and c-axes. From this result we suggested that the occurrence of superconductivity in MnP was induced by suppression of the long-range antiferromagnetically ordered state rather than a structural phase transition. Furthermore, the present experimental results show that the Pnma phase of MnP undergoes a pressure-induced structural phase transition at ~15.0 GPa. This finding lighted up-to-date understanding of the common prototype B31 structure (Strukturbericht Designation: B31) in transition metal monophosphides. No additional structural phase transition was observed up to 35.1 GPa (Run 1) and 40.2 GPa (Run 2) from the present AD-XRD results. With an extensive crystal structure searching and ab initio calculations, we predict that MnP underwent two pressure-induced structural phase transitions of Pnma → P213 and P213 → Pm-3m (CsCl-type) at 55.0 and 92.0 GPa, respectively. The structural stability and the electronic structures of manganese monophosphides under high pressure are also briefly discussed.
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Affiliation(s)
- Zhenhai Yu
- Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, People's Republic of China
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Niu Q, Yu WC, Yip KY, Lim ZL, Kotegawa H, Matsuoka E, Sugawara H, Tou H, Yanase Y, Goh SK. Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide. Nat Commun 2017; 8:15358. [PMID: 28580936 PMCID: PMC5465317 DOI: 10.1038/ncomms15358] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2016] [Accepted: 03/15/2017] [Indexed: 11/29/2022] Open
Abstract
In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron–electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations. The electronic structure of the helimagnet CrAs is unusual due to its nonsymmorphic crystal symmetry. Here, the authors observe quasilinear magnetoresistance close to a pressure-driven superconducting transition, which may arise from the interaction of the band structure and magnetic fluctuations.
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Affiliation(s)
- Q Niu
- Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - W C Yu
- Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - K Y Yip
- Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Z L Lim
- Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - H Kotegawa
- Department of Physics, Kobe University, Kobe 658-8530, Japan
| | - E Matsuoka
- Department of Physics, Kobe University, Kobe 658-8530, Japan
| | - H Sugawara
- Department of Physics, Kobe University, Kobe 658-8530, Japan
| | - H Tou
- Department of Physics, Kobe University, Kobe 658-8530, Japan
| | - Y Yanase
- Department of Physics, Kyoto University, Kyoto 606-8502, Japan
| | - Swee K Goh
- Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
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