Enhanced thermopower in ZnO two-dimensional electron gas

Unexpected thermal transport properties of MgSiO3monolayer at extreme conditions

The thermal transport properties of mantle minerals are of paramount importance to understand the thermal evolution processes of the Earth. Here, we perform extensively structural searches of two-dimensional MgSiO3monolayer by CALYPSO method and first-principles calculations. A stable MgSiO3monolayer withPmm2 symmetry is uncovered, which possesses a wide indirect band gap of 4.39 eV. The calculations indicate the lattice thermal conductivities of MgSiO3monolayer are 49.86 W (mK)-1and 9.09 W (mK)-1inxandydirections at room temperature. Our findings suggest that MgSiO3monolayer is an excellent low-dimensional thermoelectric material with highZTvalue of 4.58 from n-type doping in theydirection at 2000 K. The unexpected anisotropic thermal transport of MgSiO3monolayer is due to the puckered crystal structure and the asymmetric phonon dispersion as well as the distinct electron states around the Fermi level. These results offer a detailed description of structural and thermal transport properties of MgSiO3monolayer at extreme conditions.

Low-Temperature ALD of SbOx /Sb2 Te3 Multilayers with Boosted Thermoelectric Performance

Nanoscale superlattice (SL) structures have proven to be effective in enhancing the thermoelectric (TE) properties of thin films. Herein, the main phase of antimony telluride (Sb2 Te3 ) thin film with sub-nanometer layers of antimony oxide (SbOx ) is synthesized via atomic layer deposition (ALD) at a low temperature of 80 °C. The SL structure is tailored by varying the cycle numbers of Sb2 Te3 and SbOx . A remarkable power factor of 520.8 µW m-1 K-2 is attained at room temperature when the cycle ratio of SbOx and Sb2 Te3 is set at 1:1000 (i.e., SO:ST = 1:1000), corresponding to the highest electrical conductivity of 339.8 S cm-1 . The results indicate that at the largest thickness, corresponding to ten ALD cycles, the SbOx layers act as a potential barrier that filters out the low-energy charge carriers from contributing to the overall electrical conductivity. In addition to enhancing the scattering of the mid-to-long-wavelength at the SbOx /Sb2 Te3 interface, the presence of the SbOx sub-layer induces the confinement effect and strain forces in the Sb2 Te3 thin film, thereby effectively enhancing the Seebeck coefficient and reducing the thermal conductivity. These findings provide a new perspective on the design of SL-structured TE materials and devices.

Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system

Toward drastic enhancement of thermoelectric power factor, quantum confinement effect proposed by Hicks and Dresselhaus has intrigued a lot of researchers. There has been much effort to increase power factor using step-like density-of-states in two-dimensional electron gas (2DEG) system. Here, we pay attention to another effect caused by confining electrons spatially along one-dimensional direction: multiplied 2DEG effect, where multiple discrete subbands contribute to electrical conduction, resulting in high Seebeck coefficient. The power factor of multiple 2DEG in GaAs reaches the ultrahigh value of ~100 μWcm-1 K-2 at 300 K. We evaluate the enhancement rate defined as power factor of 2DEG divided by that of three-dimensional bulk. The experimental enhancement rate relative to the theoretical one of conventional 2DEG reaches anomalously high (~4) in multiple 2DEG compared with those in various conventional 2DEG systems (~1). This proposed methodology for power factor enhancement opens the next era of thermoelectric research.

Oxide Materials for Thermoelectric Conversion

Thermoelectric technology has emerged as a prominent area of research in the past few decades for harnessing waste heat and improving the efficiency of next-generation renewable energy technologies. There has been rapid progress in the development of high-performance thermoelectric materials, as measured by the dimensionless figure of merit (ZT = S2 · σ · κ-1). Several heavy-metal-based thermoelectric materials with commercial-level performance (ZT = 1) have so far been proposed. However, the extensive application of these materials still faces challenges due to their low thermal/chemical stability, high toxicity, and limited abundance in the Earth's crust. In contrast, oxide-based thermoelectric materials, such as ZnO, SrTiO3, layered cobalt oxides, etc., have attracted growing interest as they can overcome the limitations of their heavy-metal-based counterparts. In this review, we summarize the recent research progress and introduce improvement strategies in oxide-based thermoelectric materials. This will provide an overview of their development history and design schemes, ultimately aiding in enhancing the overall performance of oxide-based thermoelectric materials.

Ambipolar Thickness-Dependent Thermoelectric Measurements of WSe2

Thermoelectric materials can harvest electrical energy from temperature gradients, and could play a role as power supplies for sensors and other devices. Here, we characterize fundamental in-plane electrical and thermoelectric properties of layered WSe₂ over a range of thicknesses, from 10 to 96 nm, between 300 and 400 K. The devices are electrostatically gated with an ion gel, enabling us to probe both electron and hole regimes over a large range of carrier densities. We extract the highest n- and p-type Seebeck coefficients for thin-film WSe₂, -500 and 950 μV/K respectively, reported to date at room temperature. We also emphasize the importance of low substrate thermal conductivity on such lateral thermoelectric measurements, improving this platform for future studies on other nanomaterials.

High Seebeck Coefficient from Screen-Printed Colloidal PbSe Nanocrystals Thin Film

Thin-film thermoelectrics (TEs) with a thickness of a few microns present an attractive opportunity to power the internet of things (IoT). Here, we propose screen printing as an industry-relevant technology to fabricate TE thin films from colloidal PbSe quantum dots (QDs). Monodisperse 13 nm-sized PbSe QDs with spherical morphology were synthesized through a straightforward heating-up method. The cubic-phase PbSe QDs with homogeneous chemical composition allowed the formulation of a novel ink to fabricate 2 μm-thick thin films through robust screen printing followed by rapid annealing. A maximum Seebeck coefficient of 561 μV K-1 was obtained at 143 °C and the highest electrical conductivity of 123 S m-1 was reached at 197 °C. Power factor calculations resulted in a maximum value of 2.47 × 10-5 W m-1 K-2 at 143 °C. To the best of our knowledge, the observed Seebeck coefficient value is the highest reported for TE thin films fabricated by screen printing. Thus, this study highlights that increased Seebeck coefficients can be obtained by using QD building blocks owing to quantum confinement.

Continuous Tuning of the Fermi Level in Disorder-Engineered Amorphous Films of Li-Doped ZnO for Thermoelectric Applications

Amorphous metal-oxide semiconductors can be readily prepared by a solution process at low temperatures, and their energy band structures and carrier concentrations can be controlled based on the oxide composition or the addition of dopants in the design of thermoelectric (TE) materials. However, research on the correlation between the charge transport and TE performance of amorphous metal-oxide semiconductors is still in its infancy. Herein, we present the energy-dependent TE performance characteristics of Li-doped ZnO thin films with different doping levels and charge carrier concentrations. Thin films were prepared by the solution process, and the Li doping level was controlled by the Li precursor concentration added to a Zn precursor solution. Subsequently, a field-effect-modulated Seebeck coefficient measurement device was built to study the energy-dependent TE performance. Notably, the higher ratio of interstitial Li (Li_inter) and oxygen vacancies (O_va) in the Li-ZnO device indicates an improved n-type TE performance. To investigate more thoroughly the charge transport phenomena, the localized density of states (DOS) was derived from the temperature-dependent transfer curve; the higher ratio of interstitial Li (Li_inter) and oxygen vacancy (O_va) induces a reduction in the localized DOS and lowers the degree of disorder in their DOS. The determined energy-dependent TE characteristics can be used as guidance for the design of efficient TE devices with amorphous metal-oxide semiconductors.

Thermoelectric Transport in a Correlated Electron System on the Surface of Liquid Helium

We report on the direct observation of the thermoelectric transport in a nondegenerate electron system trapped on the surface of liquid helium. The microwave-induced excitation of the vertical transitions of electrons between the surface-bound states results in their lateral flow, which we were able to detect by employing a segmented electrode configuration. We show that this flow of electrons arises due to the Seebeck effect. Our experimental results are in good agreement with the theoretical calculations based on kinetic equations. This demonstrates the importance of the fast electron-electron collisions, which, in particular, leads to the violation of the Wiedemann-Franz law in this system.

Versatile Triboiontronic Transistor via Proton Conductor

Iontronics are effective in modulating electrical properties through the electric double layers (EDLs) assisted with ionic migration/arrangement, which are highly promising for unconventional electronics, ionic sensory devices, and flexible interactive interface. Proton conductors with the smallest and most abundant protons (H⁺) can realize a faster migration/polarization under electric field to form the EDL with higher capacitance. Here, a versatile triboiontronic MoS₂ transistor via proton conductor by sophisticated combination of triboelectric modulation and protons migration has been demonstrated. This device utilizes triboelectric potential originated from mechanical displacement to modulate the electrical properties of transistors via protons migration/accumulation. It shows superior electrical properties, including high current on/off ratio over 10⁶, low cutoff current (∼0.04 pA), and steep switching properties (89 μm/dec). Pioneering noise tests are conducted to the tribotronic devices to exclude the possible noise interference introduced by mechanical displacement. The versatile triboiontronic MoS₂ transistor via proton conductor has been utilized for mechanical behavior derived logic devices and an artificial sensory neuron system. This work represents the reliable and effective triboelectric potential modulation on electronic transportation through protonic dielectrics, which is highly desired for theoretical study of tribotronic gating, active mechanosensation, self-powered electronic skin, artificial intelligence, etc.

Controllable Seebeck Coefficients of a Metal-Diffused Aluminum Oxide Layer via Conducting Filament Density and Energy Filtering

We investigate the intrinsic thermoelectric (TE) properties of the metal-diffused aluminum oxide (AO) layer in metal/AO/metal structures, where the metallic conducting filaments (CFs) were locally formed in the structures via an electrical breakdown (EBD) process as shown by resistive switching memory devices, by directly measuring cross-plane Seebeck coefficients on the CF-containing insulating AO layers. The results showed that the Seebeck coefficients of the CF-containing AO layer in metal/AO/metal structures were influenced by the generation of the metallic CFs, which is due to the diffusion of the metal into the insulating AO layers when exposed to a temperature gradient in the direction of the cross plane of the sample. In addition, the increase in the Seebeck coefficients of the CF-containing AO layer when the number of EBD-processed patterns was increased is satisfactorily explained by the low-energy carrier (i.e., minority carriers) filtering through the metal-oxide interfacial barriers in the metal/AO/metal structures.

Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas

In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with ∼100 nm GaN thickness, which suppresses the phonon mean free path. However, when the thickness is increased to ∼1.2 μm, up to 32% (88%) of the Seebeck coefficient at 300 K (50 K) can be attributed to the drag component. In turn, the phonon drag enables state-of-the-art thermoelectric power factor in the thicker GaN film, up to ∼40 mW m^-1 K^-2 at 50 K. By measuring the thermal conductivity of these AlGaN/GaN films, we show that the magnitude of the phonon drag can increase even when the thermal conductivity decreases. Decoupling of thermal conductivity and Seebeck coefficient could enable important advancements in thermoelectric power conversion with devices based on 2DEGs.

Giant thermoelectric power factor in ultrathin FeSe superconductor

The thermoelectric effect is attracting a renewed interest as a concept for energy harvesting technologies. Nanomaterials have been considered a key to realize efficient thermoelectric conversions owing to the low dimensional charge and phonon transports. In this regard, recently emerging two-dimensional materials could be promising candidates with novel thermoelectric functionalities. Here we report that FeSe ultrathin films, a high-T_c superconductor (T_c; superconducting transition temperature), exhibit superior thermoelectric responses. With decreasing thickness d, the electrical conductivity increases accompanying the emergence of high-T_c superconductivity; unexpectedly, the Seebeck coefficient α shows a concomitant increase as a result of the appearance of two-dimensional natures. When d is reduced down to ~1 nm, the thermoelectric power factor at 50 K and room temperature reach unprecedented values as high as 13,000 and 260 μW cm⁻¹ K⁻², respectively. The large thermoelectric effect in high T_c superconductors indicates the high potential of two-dimensional layered materials towards multi-functionalization.

In an effort to optimize the performance of two-dimensional materials for thermoelectric generation, compounds with advantageous intrinsic properties must be identified. Here, the authors report large thermoelectric effect in ultrathin FeSe thin films with high T_c superconductivity.

Direct Probing of Cross-Plane Thermal Properties of Atomic Layer Deposition Al2O3/ZnO Superlattice Films with an Improved Figure of Merit and Their Cross-Plane Thermoelectric Generating Performance

There is a recent interest in semiconducting superlattice films because their low dimensionality can increase the thermal power and phonon scattering at the interface in superlattice films. However, experimental studies in all cross-plane thermoelectric (TE) properties, including thermal conductivity, Seebeck coefficient, and electrical conductivity, have not been performed from these semiconducting superlattice films because of substantial difficulties in the direct measurement of the Seebeck coefficient and electrical conductivity. Unlike the conventional measurement method, we present a technique using a structure of sandwiched superlattice films between two embedded heaters as the heating source, and electrodes with two Cu plates, which directly enables the investigation of the Seebeck coefficient and electrical conductivity across the Al₂O₃/ZnO superlattice films, prepared by the atomic layer deposition method. Used in combination with the promising cross-plane four-point probe 3-ω method, our measurements and analysis demonstrate all cross-plane TE properties of Al₂O₃/ZnO superlattice films in the temperature range of 80 to 500 K. Our experimental methodology and the obtained results represent a significant advancement in the understanding of phonons and electrical transports in nanostructured materials, especially in semiconducting superlattice films in various temperature ranges.

Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics

Iontronics is a newly emerging interdisciplinary concept which bridges electronics and ionics, covering electrochemistry, solid-state physics, electronic engineering, and biological sciences. The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors (but electronically insulators) and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials). Particular attention is devoted to electric-double-layer transistors (EDLTs), which are producing a significant impact, particularly in electrical control of phase transitions, including superconductivity, which has been difficult or impossible in conventional all-solid-state electronic devices. Besides that, the current state of the art and the future challenges of iontronics are also reviewed for many applications, including flexible electronics, healthcare-related devices, and energy harvesting.

Gate-Tuned Thermoelectric Power in Black Phosphorus

The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which is recently proved to be an effective tool for the investigation of thermoelectric properties. Here, we report the gate-tuning of thermoelectric power in a black phosphorus (BP) single crystal flake with the thickness of 40 nm. Using an EDLT configuration, we successfully control the thermoelectric power (S) and find that the S of ion-gated BP reached +510 μV/K at 210 K in the hole depleted state, which is much higher than the reported bulk single crystal value of +340 μV/K at 300 K. We compared this experimental data with the first-principles-based calculation and found that this enhancement is qualitatively explained by the effective thinning of the conduction channel of the BP flake and nonuniformity of the channel owing to the gate operation in a depletion mode. Our results provide new opportunities for further engineering BP as a thermoelectric material in nanoscale.