Graphene-like monolayer monoxides and monochlorides

Predicting Phase Stability at Interfaces

We present the RAFFLE methodology for structural prediction of the interface between two materials and demonstrate its effectiveness by applying it to MgO encapsulated by two layers of graphene. To address the challenge of interface structure prediction, our methodology combines physical insights derived from morphological features observed in related systems with an iterative machine learning technique. This employs physical-based methods, including void-filling and n-body distribution functions to predict interface structures. For the carbon-MgO encapsulated system, we have shown the rocksalt and hexagonal phases of MgO to be the two most energetically stable in the few-layer regime. We demonstrate that monolayer rocksalt is heavily stabilized by interfacing with graphene, becoming more energetically favorable than the graphenelike monolayer hexagonal MgO. The RAFFLE methodology provides valuable insights into interface behavior, and a route to finding new materials at interfaces.

Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping

In this work, the effects of vacancies and doping on the electronic and magnetic properties of the stable scandium nitride (ScN) monolayer are investigated using first-principles calculations. The pristine monolayer is a two-dimensional (2D) indirect-gap semiconductor material with an energy gap of 1.59(2.84) eV as calculated using the GGA-PBE (HSE06) functional. The projected density of states, charge distribution, and electron localization function assert its ionic character generated by the charge transfer from the Sc atoms to the N atoms. The monolayer is magnetized by a single Sc vacancy with a total magnetic moment of 3.00μB, while a single N vacancy causes a weaker magnetization with a total magnetic moment of 0.52μB. In both cases, the magnetism originates mainly from the atoms closest to the defect site. Significant magnetization is also reached by doping with acceptor impurities. Specifically, a total magnetic moment of 2.00μB is obtained by doping with alkali metals (Li and Na) in the Sc sublattice and with B in the N sublattice. Doping with alkaline earth metals (Be and Mg) in the Sc sublattice and with C in the N sublattice induces a value of 1.00μB. In these cases, either magnetic semiconducting or half-metallicity characteristics arise in the ScN monolayer, making it a prospective 2D spintronic material. In contrast, no magnetism is induced by doping with donor impurities (O and F atoms) in the N sublattice. An O impurity metallizes the monolayer; meanwhile, F doping leads to a large band-gap reduction of the order of 82%, widening the working regime of the monolayer in optoelectronic devices. The results presented herein may introduce efficient methods to functionalize the ScN monolayer for optoelectronic and spintronic applications.

Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X = F and Cl) monolayers

In this work, the stability, and electronic and magnetic properties of pristine and doped graphene-like ionic NaX (X = F and Cl) monolayers are explored using first-principles calculations. The good stability of NaF and NaCl monolayers is confirmed by phonon dispersion curves and ab initio molecular dynamics simulations. Electronic structure calculations show their insulator nature with large indirect band gaps of 5.43 (7.26) and 5.06 (6.32) eV as calculated with the PBE (HSE06) functional, respectively. In addition, their ionic character is also demonstrated. Furthermore, a doping approach is explored to functionalize NaX monolayers for spintronic applications. For such a goal, IIA- and VIA-group atoms are selected as dopants due to their dissimilar valence electronic configuration as compared with the host atoms. The results indicate the emergence of magnetic semiconductor nature with a total magnetic moment of 1μB. Herein, magnetic properties are produced mainly by the dopant atoms, which induce new middle-gap energy states around the Fermi level. Finally, the effects of codoping the NaF monolayer with Ca and O and NaCl with Ba and O are also examined. Adjacent Ca-O and Ba-O pairs preserve the non-magnetic nature. Further separating dopants leads to the emergence of magnetic semiconductor behavior, with lower magnetization than separate doping. This work introduces new ionic 2D materials for optoelectronic and spintronic applications, contributing to the research effort to find out new 2D multifunctional materials.

Prediction of nonlayered oxide monolayers as flexible high-κ dielectrics with negative Poisson's ratios

During the last two decades, two-dimensional (2D) materials have been the focus of condensed matter physics and material science due to their promising fundamental properties and (opto-)electronic applications. However, high-κ 2D dielectrics that can be integrated within 2D devices are often missing. Here, we propose nonlayered oxide monolayers with calculated exfoliation energy as low as 0.39 J/m2 stemming from the ionic feature of the metal oxide bonds. We predict 51 easily or potentially exfoliable oxide monolayers, including metals and insulators/semiconductors, with intriguing physical properties such as ultra-high κ values, negative Poisson's ratios and large valley spin splitting. Among them, the most promising dielectric, GeO2, exhibits an auxetic effect, a κ value of 99, and forms type-I heterostructures with MoSe2 and HfSe2, with a band offset of ~1 eV. Our study opens the way for designing nonlayered 2D oxides, offering a platform for studying the rich physics in ultra-thin oxides and their potential applications in future information technologies.

Functionalization of an ionic honeycomb KF monolayer via doping

Doping has been widely employed to functionalize two-dimensional (2D) materials because of its effectiveness and simplicity. In this work, the electronic and magnetic properties of pristine and doped KF monolayers are investigated using first-principles calculations based on density functional theory (DFT). Phonon dispersion curves and ab initio molecular dynamics (AIMD) snapshots indicate good stability of the pristine material. The band structure shows an insulating behavior of the KF monolayer, with indirect gaps of 4.80 (6.53) eV as determined using the PBE (HSE06) functional. Its ionic character is also confirmed by the valence charge distribution and Bader charge analysis, and is generated by charge transfer from the K-4s orbital to the F-2p orbital. Doping at both anion and cation sites is explored using N/O and Ca/Sr as dopants, respectively, due to their dissimilar valence electronic configuration in comparison with that of the host atoms. It is found that the KF monolayer is significantly magnetized, where total magnetic moments of 2.00 and 1.00 μB are obtained via N and O/Ca/Sr doping, respectively. Moreover, the appearance of new middle-gap energy states leads to the development of a magnetic semiconductor nature, which is regulated by N-2p, O-2p, Ca-3d, Ca-4s, Sr-4d, and Sr-5s orbitals. Further investigation of codoping indicates that a magnetic-semiconductor nature is preserved, where the synergistic effects of dopants play a key role in the electronic and magnetic properties of the codoped systems. The results presented herein introduce doping as an efficient approach to functionalize the ionic KF monolayer to obtain prospective d0 spintronic materials, a functionality that is not accounted for by the pristine monolayer.

Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers

Two-dimensional (2D) heterostructures have attracted a lot of attention due to their novel properties induced by the synergistic effects of the constituent building blocks. In this work, new lateral heterostructures (LHSs) formed by stitching germanene and AsSb monolayers are investigated. First-principles calculations assert the semimetal and semiconductor characters of 2D germanene and AsSb, respectively. The non-magnetic nature is preserved by forming LHSs along the armchair direction, where the band gap of the germanene monolayer can be increased to 0.87 eV. Meanwhile, magnetism may emerge in the zigzag-interline LHSs depending on the chemical composition. Such that, total magnetic moments up to 0.49 μ_B can be obtained, being produced mainly at the interfaces. The calculated band structures show either topological gap or gapless protected interface states, with quantum spin-valley Hall effects and Weyl semimetal characters. The results introduce new lateral heterostructures with novel electronic and magnetic properties, which can be controlled by the interline formation.

Half-metallic and magnetic semiconductor behavior in CdO monolayer induced by acceptor impurities

In this work, a doping approach is explored as a possible method to induce novel features in the CdO monolayer for spintronic applications. Monolayer CdO is a two-dimensional (2D) non-magnetic semiconductor material with a band gap of 0.82 eV. In monolayer CdO, a single Cd vacancy leads to magnetization of the monolayer with a total magnetic moment of -2μ_B, whereas its non-magnetic nature is preserved upon creating a single O vacancy. Doping the Cd sublattice with Cu-Ag and Au induces half-metallic character with a total magnetic moment of -1 and 1μ_B, respectively. Dopants and their neighboring O atoms produce mainly magnetic properties. By contrast, doping with N, P, and As at the O sublattice leads to the emergence of magnetic semiconductor behavior with a total magnetic moment of 1μ_B. Herein, magnetism originates mainly from the spin-asymmetric charge distribution in the outermost orbitals of the dopants. Bader charge analysis and charge density difference calculations indicate charge transfer from Cu, Ag and Au dopants to the host monolayer, whereas the N, P and As dopants exhibit important charge gains. These results suggest that doping with acceptor impurities is an efficient approach to functionalize the CdO monolayer to generate spin currents in spintronic devices.

Ultra-Thin 2D Ionic Salt Supported with Strong Hydrogen-Bonding Assisted Ionic Interaction

2D materials have attracted great interest since the report of graphene. However, because of the fragile stability of ultra-thin nanosheets, most studies are restricted to sheets maintained by strong covalent or coordination bonds. The research on which kind of bonds can maintain the free-standing existence of 2D nanosheets is still of great significance. Recently, 2D ionic salts are successfully synthesized on substrates, but whether 2D ionic salts can free-stand is still a problem. Herein this problem is addressed by a free-standing 2D ionic salt (thickness: ≈2 nm) exfoliated from a 4,4'-bipyridinium hydrochloride salt crystal. The stability of this 2D salt is supported by a strong NH···Cl hydrogen (H)-bonding assisted ionic interaction (17.99 kcal mol^-1 ), which is verified by density functional theory calculation and natural bond orbital analysis. The salt crystal has strong air-stable radicals inside and the 2D ionic salt exhibits red fluorescence in solution and in solid-state, especially in solution the stokes shifts are very large (≈ 386 nm). This breakthrough work is not only beneficial for the construction of novel 2D materials but also for the understanding of H-bonding interactions.

Robust electronic properties of monolayer BeO against molecule adsorption

The stability of two-dimensional (2D) materials upon exposure to ambient conditions is significant for their applications. In this paper, the air stability of the BeO monolayer with and without vacancy defects is carefully studied via DFT calculations. Our results suggest high structural and electronic stability of BeO monolayers upon exposure to O₂, N₂, CO₂ and H₂O even with Be vacancies. O vacancies are not favorable in free-standing BeO monolayers and can be easily healed by H₂O or CO₂ adsorption. Due to the high stability, large band gap and atomic flat surface, BeO monolayers are expected to be an ideal encapsulation material for 2D electronic devices.

A Family of Triatomic Carbon and Pentacarbides with Superstrong Mechanical Properties

Diamond has the largest hardness of any natural material with an experimental Vickers hardness value of 90–150 GPa. Here, we reported the stable triatomic carbon allotrope with giant hardness closing that of diamond and a family of pentacarbides with superstrong mechanical properties from the state-of-the-art theoretical calculations. The triatomic carbon allotrope can be transformed into a two-dimensional carbon monolayer at a high temperature. We predicted that the triatomic carbon allotrope holds a hardness of 113.3 GPa, showing the potential capability of cracking diamond. Substitution with Al, Fe, Ir, Os, B, N, Si, W, and O element resulted in strong pentacarbides with Young’s modulus of 400–800 GPa. SiC₅, BC₅, IrC₅, and WC₅ are superhard materials with Vickers hardness over 40 GPa, of which BC₅ was successfully synthesized in previous experimental reports. Our results demonstrated the potential of the present strong triatomic carbon and pentacarbides as future high-performance materials.

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Stable triatomic carbon allotrope with giant hardness reaching diamond

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Structural transformation into two-dimensional carbon monolayer at high temperature

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XC₅ (X = Al, Fe, Ir, Os, B, N, Si, W, and O) are strong pentacarbides

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SiC₅, BC₅, IrC₅, and WC₅ are superhard materials with Vickers hardness over 40 GPa

On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity

We propose a new class of quantum materials, type-II two-dimensional ferroelectric topological insulators (2DFETIs), which allow non-volatility and an on-off switch of quantum spin Hall states. A general strategy is developed to realize type-II 2DFETIs using only topologically trivial 2D ferroelectrics. The built-in electric field arising from the out-of-plane polarization across the bilayer heterostrucuture of 2D ferroelectrics enables robust control of the band gap size and band inversion strength, which can be utilized to manipulate the topological phase transitions on-demand. Using first-principles calculations with hybrid density functionals, we demonstrate that a series of bilayer heterostructures are type-II 2DFETIs characterized with a direct coupling between the band topology and polarization state. We propose a few 2DFETI-based quantum electronics, including domain-wall quantum circuits and topological memristors.

Vacancy-Induced Thermal Transport and Tensile Mechanical Behavior of Monolayer Honeycomb BeO

Because of the rapid shrinking trend of integrated circuits, the performances of nanodevices and nanomechanical systems are greatly affected by the joule heating and mechanical failure dilemma. In addition, structural defects are inevitable during experimental synthesis of nanomaterials, which may alter their physical properties significantly. Investigation of the thermal transport and mechanical behavior of nanostructured materials with structural defects is thus a crucial requirement. In this study, the thermal conductivity (TC) and tensile mechanical behavior of monolayer honeycomb BeO are systematically explored using molecular dynamics simulations. An infinite length bulk TC of ∼277.77 ± 8.93 W/mK was found for the pristine monolayer BeO. However, the insertion of 1% single vacancy (SV) and double vacancy (DV) defects reduces the TC by ∼36.98 and ∼33.52%, respectively. On the other hand, the uniaxial tensile loading produces asymmetrical fracture stress, elastic modulus, and fracture strain behaviors in the armchair and zigzag directions. The elastic modulus was reduced by ∼4.7 and ∼6.6% for 1% SV defects along the armchair and zigzag directions, respectively, whereas the reduction was ∼2.7 and ∼ 5.1% for 1% DV defects. Moreover, because of the strong symmetry-breaking effect, both the TC and mechanical strength were significantly lower for the SV defects than those for the DV defects. The highly softening and decreasing trends of the phonon modes with increasing vacancy concentration and temperature, respectively, were noticed for both types of defects, resulting in a reduction of the TC of the defected structures. These findings will be helpful for the understanding of the heat transport and mechanical characteristics of monolayer BeO as well as provide guidance for the design and control of BeO-based nanoelectronic and nanoelectromechanical devices.

Theoretical Prediction of Graphene-like 2D Uranyl Material with p-Orbital Antiferromagnetism

Versatile graphene-like two-dimensional materials with s-, p- and d-block elements have aroused significant interests because of their extensive applications while there is a lack of f-block one. Herein we report...

High-Throughput Screening of Element-Doped Carbon Nanotubes Toward an Optimal One-Dimensional Superconductor

In order to search for optimal one-dimensional (1D) superconductors with a high transition temperature (T_c), we performed high-throughput computation on the phonon dispersion, electron-phonon coupling (EPC), and superconducting properties of (5,0), (3,3), and element-doped (3,3) carbon nanotubes (CNTs) based on first-principles calculations. We find that the CNT (5,0) is superconductive with T_c of 7.9 K, while the (3,3) CNT has no superconductivity. However, by high-throughput screening of about 50 elements in the periodic table, we identified that 14 elemental dopants can make the (3,3) CNT dynamically stable and superconducting. The high T_c ≈ 28 K suggests that the Si-doped (3,3) CNT is an excellent one-dimensional (1D) superconductor. In addition, the Al-, In-, and La-doped (3,3) CNTs are also great 1D superconductor candidates with a T_c of about 18, 17, and 29 K, respectively. These results may inspire the synthesis and discovery of optimal high-T_c 1D superconductors experimentally.

Two-dimensional van der Waals heterostructure CdO/PtSe2: promising visible light photocatalyst for overall water splitting

Due to the gradual depletion of fossil fuels and the serious environmental pollution, hydrogen generation by photocatalytic water splitting has been considered as an alternative strategy for clean energy. Herein, using hybrid density functional calculations, we systematically study the structural, electronic and optical properties of van der Waals heterostructure CdO/PtSe₂ with different stacking patterns. The heterostructure is found to be dynamically stable, and has type-II band alignment with a large built-in electric field, which is favorable for the efficient spatial separation of photogenerated charge carriers. By revealing the intrinsic interface dipoles dependent photocatalytic mechanisms, we find the band edges of all patterns straddle the water redox levels despite the AB-1 pattern having a bandgap less than 1.23 eV. Moreover, the heterostructure shows globally improved optical absorptions with a large absorption coefficient (10⁵ cm^-1) compared to the single layers, demonstrating the enhanced photocatalytic activity. Comparing with widely discussed bilayer systems like graphene/C₃N₄ and MoS₂/C₃N₄, the CdO/PtSe₂ simultaneously has several advantages or peculiarities such as the more favorable absorption of visible light, therefore CdO/PtSe₂ is a promising candidate and a unique system for photocatalytic water splitting.

Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study

In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations. The two dimensional (2D) material stability is confirmed by the phonon dispersion curves and binding energies. Full functionalization causes notable changes in the monolayer structure and slightly reduces the chemical stability. The simulations predict that the MgO single layer is an indirect semiconductor with an energy gap of 3.481 (4.693) eV as determined by the GGA-PBE (HSE06) functional. The electronic structure of the MgO monolayer exhibits high sensitivity to chemical functionalization. Specifically, nitrogenation induces metallization of the MgO monolayer, while an indirect–direct band gap transition and band gap reduction of 81.34 (59.96)% are achieved by means of fluorination. Consequently, the functionalized single layers display strong optical absorption in the infrared and visible regimes. The results suggest that full nitrogenation and fluorination may be a quite effective approach to enhance the optoelectronic properties of the MgO monolayer for application in nano-devices.

In this paper, we present a detailed investigation of the structural, electronic, and optical properties of pristine, nitrogenated, and fluorinated MgO monolayers using ab initio calculations.

Electronic and thermal properties of monolayer beryllium oxide from first principles

Monolayer beryllium oxide (BeO), a new graphene-like metal oxide material, has attracted tremendous interest since it was demonstrated to have high dynamic, thermal, kinetic and mechanical stabilities in recent years. This discovery enriches the catalogue of 2D materials and paves the way for the exploration of relevant properties. In this work, the electronic and thermal properties of monolayer BeO are predicted by first-principles calculations. Compared with graphene and monolayer hexagonal boron nitride (h-BN), the monolayer BeO is an insulator and its electrons are highly localized around O and Be atoms (ionic nature). More importantly, the thermal conductivity of monolayer BeO is found to be 266 Wm^-1K^-1 at 300 K, which is lower than that of graphene and h-BN but higher than most other 2D materials. Further spectrum analysis reveals that 75% of the thermal conductivity of monolayer BeO is contributed by phonons with a frequency from 0 to 5.4 THz. With the characteristics of wide bandgap and high thermal conductivity, monolayer BeO shows great potential for applications in electronic device packages and Li-ion batteries.

Graphene-Like Covalent Organic Framework with a Wide Band Gap Synthesized On Surface via Stepwise Reactions

Developing graphene-like two-dimensional materials naturally possessing a band gap has sparked enormous interest. Thanks to the inherent wide band gap and high mobility in the 2D plane, covalent organic frameworks containing triazine rings (t-COFs) hold great promise in this regard, whilst the synthesis of single-layer t-COFs remains highly challenging. Herein, we present the fabrication of a well-defined graphene-like t-COF on Au(111). Instead of single/multiple-step single-type reactions commonly applied for on-surface synthesis, distinct stepwise on-surface reactions, including alkynyl cyclotrimerization, C-O bond cleavage, and C-H bond activation, are triggered on demand, leading to product evolution in a controlled step-by-step manner. Aside from the precise control in sophisticated on-surface synthesis, this work proposes a single-atomic-layer organic semiconductor with a wide band gap of 3.41 eV.

New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties

The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3d are identified, distinct from well-known polymorphs based on the D 3h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed.

Exotic Two-Dimensional Structure: The First Case of Hexagonal NaCl

NaCl is one of the simplest compounds and was thought to be well-understood, and yet, unexpected complexities related to it were uncovered at high pressure and in low-dimensional states. Here, exotic hexagonal NaCl thin films on the (110) diamond surface were crystallized in the experiment following a theoretical prediction based on ab initio evolutionary algorithm USPEX. State-of-the-art calculations and experiments showed the existence of a hexagonal NaCl thin film, which is due to the strong chemical interaction of the NaCl film with the diamond substrate.

A two-dimensional CdO/CdS heterostructure used for visible light photocatalysis

Based on hybrid density functional calculations, the geometrical and electronic structures of a two-dimensional (2D) CdO/CdS heterostructure (HT) formed by a CdO monolayer (ML) and a CdS ML are investigated. The formation of the CdO/CdS HT is exothermic, and the CdO/CdS HT shows excellent ability for visible light absorption. The CdO/CdS HT with a rotation angle of 0° possesses the characteristics of type-II band alignment and strong built-in electric field across the interface, which boost the photogenerated carrier separation. Besides, the band edge positions of the CdO/CdS HT of 0° are energetically favorable for overall water-splitting processes with the pH scope of 0-3.6. Therefore, the CdO/CdS HT is a promising photocatalyst to split water.

ZnCdO2 monolayer - A complex 2D structure of ZnO and CdO monolayers for photocatalytic water splitting driven by visible-light

ZnO monolayer possesses band structure matching the conditions of water splitting for hydrogen generation but cannot well response to the visible light, while CdO one, contrariwise, have obvious optical absorption in the visible light range but no satisfactory band edges for the water splitting to produce hydrogen. Here, we predict a two-dimensional ZnCdO₂ structure comprising of ZnO and CdO ones to achieve their strengths. The band structures, optical properties, carrier mobility, and the strain engineering for ZnCdO₂, ZnO and CdO monolayers are investigated by using the first-principles hybridization functional calculations. The results demonstrate that the two-dimensional ZnCdO₂ structure is a promising candidate for water splitting to produce hydrogen. All the structures show a direct band energy gap and the character remains unchanged under the considered biaxial strains. All the conduction band minimums are suitable for water splitting reaction even under the -4% to +4% strain. Moreover, the valence band maximum of ZnCdO₂ monolayer matches the conditions of the water-splitting reaction under the -2% to +4% strain. Interestingly, the unsatisfactory valence band maximum of CdO monolayer can be overcome by strain larger than +2%. As expected, the enhanced optical absorption in the visible light range is observed for the ZnCdO₂ monolayer. Additionally, the mobilities of the hole and the electron are significantly different for the three monolayers, implying that the low recombination ratio of the photogenerated carrier pairs is available, which is also beneficial for the photocatalytic performance. Therefore, ZnCdO₂ monolayer and CdO monolayer (with tensile strain larger than 2%) is a promising candidate for the water splitting to produce hydrogen under the irradiation of the solar light.

Strain-driven dynamic stability and anomalous enhancement of thermal conductivity in graphene-like IIA-VI monolayer monoxides

Graphene-like IIA-VI monolayer monoxides have been predicted to be novel two-dimensional materials with intrinsic bandgap, which makes them promising prospect for electronics and optoelectronics applications. In the field of microelectronics, heat dissipation is considered as the bottleneck that limits further development. Thus, the effective regulation in thermal transport is of great interest for designing novel devices. A systematic study in this work is carried out by first-principles method to explore thermal conductivity of these monoxides under strain. Compared with that of minimum strained MgO, CaO, SrO and BaO, the maximum thermal conductivity is increased by 3.25, 3.07, 1.50 and 1.53 times, respectively, under tensile strain. Detailed analysis shows that the weakened phonon-phonon scattering strength is the behind physical mechanism. It is also found that the tensile strain aids to improving the stability. Our work provides an attractive platform by studying the thermal transport of these monoxides under strain, suggesting the possible applications of these monolayers in novel devices.