Quasi-Fermi level splitting in nanoscale junctions from ab initio

Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional Transistors

Two-dimensional material-based field-effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM-FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi-Fermi-level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer-QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM-FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non-monotonic drain conductance characteristics. A three-bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM-FET-based integrated circuits.

Localized coherent phonon generation in monolayer MoSe2 from ultrafast exciton trapping at shallow traps

We report spectroscopic evidence for the ultrafast trapping of band edge excitons at defects and the subsequent generation of defect-localized coherent phonons (CPs) in monolayer MoSe2. While the photoluminescence measurement provides signals of exciton recombination at both shallow and deep traps, our time-resolved pump-probe spectroscopy on the sub-picosecond time scale detects localized CPs only from the ultrafast exciton trapping at shallow traps. Based on occupation-constrained density functional calculations, we identify the Se vacancy and the oxygen molecule adsorbed on a Se vacancy as the atomistic origins of deep and shallow traps, respectively. Establishing the correlations between the defect-induced ultrafast exciton trapping and the generation of defect-localized CPs, our work could open up new avenues to engineer photoexcited carriers through lattice defects in two-dimensional materials.

Quantum hybridization negative differential resistance from non-toxic halide perovskite nanowire heterojunctions and its strain control

While low-dimensional organometal halide perovskites are expected to open up new opportunities for a diverse range of device applications, like in their bulk counterparts, the toxicity of Pb-based halide perovskite materials is a significant concern that hinders their practical use. We recently predicted that lead triiodide (PbI3) columns derived from trimethylsulfonium (TMS) lead triiodide (CH3)3SPbI3 (TMSPbI3) by stripping off TMS ligands should be semimetallic, and additionally ultrahigh negative differential resistance (NDR) can arise from the heterojunction composed of a TMSPbI3 channel sandwiched by PbI3 electrodes. Herein, we computationally explore whether similar material and device characteristics can be obtained from other one-dimensional halide perovskites based on non-Pb metal elements, and in doing so deepen the understanding of their mechanistic origins. First, scanning through several candidate metal halide inorganic frameworks as well as their parental form halide perovskites, we find that the germanium triiodide (GeI3) column also assumes a semimetallic character by avoiding the Peierls distortion. Next, adopting the bundled nanowire GeI3-TMSGeI3-GeI3 junction configuration, we obtain a drastically high peak current density and ultrahigh NDR at room temperature. Furthermore, the robustness and controllability of NDR signals from GeI3-TMSGeI3-GeI3 devices under strain are revealed, establishing its potential for flexible electronics applications. It will be emphasized that, despite the performance metrics notably enhanced over those from the TMSPbI3 case, these device characteristics still arise from the identical quantum hybridization NDR mechanism.

An Optogenetics-Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network

Optogenetics refers to a technique that uses light to modulate neuronal activity with a high spatiotemporal resolution, which enables the manipulation of learning and memory functions in the human brain. This strategy of controlling neuronal activity using light can be applied for the development of intelligent systems, including neuromorphic and in-memory computing systems. Herein, a flexible van der Waals (vdW) optoelectronic synapse is reported, which is a core component of optogenetics-inspired intelligent systems. This synapse is fabricated on 2D vdW layered rhenium disulfide (ReS₂ ) that features an inherent photosensitive memory nature derived from the persistent photoconductivity (PPC) effect, successfully mimicking the dynamics of biological synapses. Based on first-principles calculations, the PPC effect is identified to originate from sulfur vacancies in ReS₂ that have an inherent tendency to form shallow defect states near the conduction band edges and under optical excitation lead to large lattice relaxation. Finally, the feasibility of applying the synapses in optogenetics-inspired intelligent systems is demonstrated via training and inference tasks for the CIFAR-10 dataset using a convolutional neural network composed of vdW optoelectronic synapse devices.

Multi-Space Excitation as an Alternative to the Landauer Picture for Nonequilibrium Quantum Transport

While the Landauer viewpoint constitutes a modern basis to understand nanoscale electronic transport and to realize first-principles implementations of the nonequilibrium Green's function (NEGF) formalism, seeking an alternative picture can be beneficial for the fundamental understanding and practical calculations of quantum transport processes. Herein, introducing a micro-canonical picture that maps the finite-bias quantum transport process to a drain-to-source or multi-electrode optical excitation, the multi-space constrained-search density functional theory (MS-DFT) formalism for first-principles electronic structure and quantum transport calculations is developed. Performing MS-DFT calculations for the benzenedithiolate single-molecule junction, it is shown that MS-DFT and standard DFT-NEGF calculations produce practically equivalent electronic and transmission data. Importantly, the variational convergence of "nonequilibrium total energy" within MS-DFT is demonstrated, which should have significant implications for in operando studies of nanoscale devices. Establishing a viable alternative to the Landauer viewpoint, the developed formalism should provide valuable atomistic information in the development of next-generation nanodevices.