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Roy S, Joseph A, Zhang X, Bhattacharyya S, Puthirath AB, Biswas A, Tiwary CS, Vajtai R, Ajayan PM. Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage. Chem Rev 2024. [PMID: 39042038 DOI: 10.1021/acs.chemrev.3c00937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Antony Joseph
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Abhijit Biswas
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Chandra Sekhar Tiwary
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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Singh AK, Gao W, Deb P. Large thermoelectric transport in magnetically coupled CrI 3/1T-MoS 2vdW heterostructure via spin-charge interconversion. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:305704. [PMID: 38653260 DOI: 10.1088/1361-648x/ad4247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Accepted: 04/23/2024] [Indexed: 04/25/2024]
Abstract
Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of TE and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect. Herein, we design a van der Waals (vdW) heterostructure of metallic 1T-MoS2with promising TE properties and a layer-dependent magnetic CrI3material. The result highlights exotic electronic and magnetic configurations of the designed monolayer-CrI3/1T-MoS2vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV Cr-1and 12.30%, respectively. To this end, the semiconducting CrI3layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect. Moreover, a large dimensionless figure of merit of ∼6 and a power factor of∼3.8×1011/τ∘ Wm-1K-2s-1near the Fermi level at 300 K endorse the rejuvenated TE effect. The strong relativistic spin-orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional TE devices.
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Affiliation(s)
- Anil Kumar Singh
- Department of Physics, Tezpur University (Central University), Tezpur 784028, India
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore
| | - Pritam Deb
- Department of Physics, Tezpur University (Central University), Tezpur 784028, India
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Song J, Sun M. Modulating Thermoelectric Properties of the MoSe 2/WSe 2 Superlattice Heterostructure by Twist Angles. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3325-3333. [PMID: 38190725 DOI: 10.1021/acsami.3c15160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/10/2024]
Abstract
In the current era of limited resources, the matter of energy conversion holds significant importance. Thermoelectric materials possess the ability to transform thermal energy into electric power. Achieving an impressive thermoelectric figure of merit (ZT) necessitates the presence of a high power factor alongside low thermal conductivity. Stimulated by recent experimental reports on the in-plane lateral MoSe2/WSe2 heterostructure in the application thermoelectric device [Zhang Y. et al., Simultaneous electrical and thermal rectification in a monolayer lateral heterojunction. Science 2022, 378, 169], in this study, the method of twisting angle is used to modulate the energy bands of van der Waals MoSe2/WSe2 superlattice heterostructures to optimize the carrier concentration, band gap, electric conductance, thermal conductivity, and ZT of the heterostructure. The 21.79° twisted heterostructures among different twisting-angle heterostructures benefit from both the high power factor and low thermal conductivity, ultimately leading to significantly improved ZT compared to the untwisted counterpart.
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Affiliation(s)
- Jizhe Song
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Mengtao Sun
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
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Jenisha MA, Kavirajan S, Harish S, Kamalakannan S, Archana J, Senthil Kumar E, Wakiya N, Navaneethan M. Multiple approaches of band engineering and mass fluctuation of solution-processed n-type Re-doped MoS 2 nanosheets for enhanced thermoelectric power factor. J Colloid Interface Sci 2024; 653:1150-1165. [PMID: 37788583 DOI: 10.1016/j.jcis.2023.08.201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 08/24/2023] [Accepted: 08/31/2023] [Indexed: 10/05/2023]
Abstract
The thermoelectric (TE) performance of Molybdenum disulpide (MoS2) can be improved by the incorporation of nanomaterials. MoS2 has been reported as promising thermoelectric materials due to their large bandgap and low thermal conductivity. In the present work, n-type MoS2 was successfully synthesized by facile hydrothermal route with an excellent thermoelectric performance by introducing rhenium (Re) dopant. The structural and morphological analyses confirmed the incorporation of Re into Mo (Molybdenum) lattice. The thermoelectric results showed that both the electrical conductivity (σ) and Seebeck coefficient (S) has been increased with the increase in Re content (2.5, 5, 7.5 and 10 at%) and temperature (303 K to 700 K), while the thermal conductivity (κ) was low. Doping with Re on MoS2 enhances the electrical conductivity through band engineering, improving carrier concentration and shifting the Fermi level to the conduction band. Introducing a heavy atomic element can reduce the total thermal conductivity by facilitating mass fluctuation. The maximum Seebeck coefficient was obtained as -100 μVK-1 at 500 K for Re 5 at% sample, which is 3.7 times greater than undoped MoS2. In addition, introducing electrons through Re doping induced bipolar conduction. These enhancements have increased the power factor of 8 μWm-1K-2 at 650 K.
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Affiliation(s)
- M Arockia Jenisha
- Nanotechnology Research Center (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India; Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - S Kavirajan
- Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - S Harish
- Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India; Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu,Shizuoka, 432-8011, Japan
| | - S Kamalakannan
- Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - J Archana
- Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - E Senthil Kumar
- Nanotechnology Research Center (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Naoki Wakiya
- Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu,Shizuoka, 432-8011, Japan
| | - M Navaneethan
- Nanotechnology Research Center (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India; Functional Materials and Energy Devices Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India.
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Youn S, Kim J, Moon H, Kim JK, Jang J, Chang J, Lee T, Kang K, Lee W. Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200818. [PMID: 35485322 DOI: 10.1002/smll.202200818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Revised: 03/21/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figure of merit, suitable doping methods to improve and optimize the thermoelectric power factor of TMDCs have not been studied extensively. In this respect, molecular charge-transfer doping is utilized effectively in TMDC-based nanoelectronic devices due to its facile and controllable nature owing to a diverse range of molecular designs available for modulating the degree of charge transfer. In this study, the power of molecular charge-transfer doping is demonstrated in controlling the carrier-type (n- and p-type) and thermoelectric power factor in platinum diselenide (PtSe2 ) nanosheets. This, combined with the tunability in the band overlap by changing the thickness of the nanosheets, allows a significant increase in the thermoelectric power factor of the n- and p-doped PtSe2 nanosheets to values as high as 160 and 250 µW mK-2 , respectively. The methodology employed in this study provides a simple and effective route for the molecular doping of TMDCs that can be used for the design and development of highly efficient thermoelectric energy conversion systems.
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Affiliation(s)
- Seonhye Youn
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Jeongmin Kim
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988, Republic of Korea
| | - Hongjae Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Jae-Keun Kim
- Max-Planck Institute of Microstructure Physics, Weinberg 2, Saale, 06120, Halle, Germany
| | - Juntae Jang
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Joonyeon Chang
- Natural Products Institute, Korea Institute of Science and Technology (KIST), 679 Saimdang-ro, Gangneung, Gangwon-do, 25451, Republic of Korea
| | - Takhee Lee
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul, 08826, Republic of Korea
| | - Keehoon Kang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
| | - Wooyoung Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea
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Ouyang Y, Zhou Y, Zhang Y, Li Q, Wang J. Double-edged roles of intrinsic defects in two-dimensional MoS2. TRENDS IN CHEMISTRY 2022. [DOI: 10.1016/j.trechm.2022.02.006] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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Towards Integration of Two-Dimensional Hexagonal Boron Nitride (2D h-BN) in Energy Conversion and Storage Devices. ENERGIES 2022. [DOI: 10.3390/en15031162] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/10/2022]
Abstract
The prominence of two-dimensional hexagonal boron nitride (2D h-BN) nanomaterials in the energy industry has recently grown rapidly due to their broad applications in newly developed energy systems. This was necessitated as a response to the demand for mechanically and chemically stable platforms with superior thermal conductivity for incorporation in next-generation energy devices. Conventionally, the electrical insulation and surface inertness of 2D h-BN limited their large integration in the energy industry. However, progress on surface modification, doping, tailoring the edge chemistry, and hybridization with other nanomaterials paved the way to go beyond those conventional characteristics. The current application range, from various energy conversion methods (e.g., thermoelectrics) to energy storage (e.g., batteries), demonstrates the versatility of 2D h-BN nanomaterials for the future energy industry. In this review, the most recent research breakthroughs on 2D h-BN nanomaterials used in energy-based applications are discussed, and future opportunities and challenges are assessed.
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Zhao Y, Zheng M, Wu J, Guan X, Suwardi A, Li Y, Lal M, Xie G, Zhang G, Zhang L, Thong JTL. Modification of thermal transport in few-layer MoS 2 by atomic-level defect engineering. NANOSCALE 2021; 13:11561-11567. [PMID: 34190260 DOI: 10.1039/d1nr01832a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Molybdenum disulfide (MoS2) has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent band structure, with potential applications in modern electronic, photovoltaic and valleytronic devices. Despite these advantages, its thermal transport property has often been neglected until recently. In this work, we probe phonon transport in few-layer MoS2 flakes with various point defect concentrations enabled by helium ion (He+) irradiation. For the first time, we experimentally show that Mo-vacancies greatly impede phonon transport compared to S-vacancies, resulting in a larger reduction of thermal conductivity. Furthermore, Raman characterization shows that the in-plane Raman-sensitive peak E2g1 was red-shifted with increasing defect concentration, corresponding to the gradual damage of the in-plane crystalline networks and the gradual reduction in the measured thermal conductivity. Our work provides a practical approach for atomic-level engineering of phonon transport in two-dimensional (2D) layered materials by selectively removing elements, thus holding potential applications in designing thermal devices based on various emerging 2D materials.
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Affiliation(s)
- Yunshan Zhao
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China.
| | - Minrui Zheng
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore.
| | - Jing Wu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore
| | - Xin Guan
- International Studies College, National University of Defense Technology, Nan Jing, 210012, China
| | - Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore
| | - Yida Li
- Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China
| | - Manohar Lal
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore.
| | - Guofeng Xie
- Hunan University of Science and Technology, Xiangtan, 411201, China
| | - Gang Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore.
| | - Lifa Zhang
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China.
| | - John T L Thong
- Department of Electrical and Computer Engineering, National University of Singapore, 117583, Singapore.
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Amsterdam SH, Marks TJ, Hersam MC. Leveraging Molecular Properties to Tailor Mixed-Dimensional Heterostructures beyond Energy Level Alignment. J Phys Chem Lett 2021; 12:4543-4557. [PMID: 33970639 DOI: 10.1021/acs.jpclett.1c00799] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The surface sensitivity and lack of dielectric screening in two-dimensional (2D) materials provide numerous intriguing opportunities to tailor their properties using adsorbed π-electron organic molecules. These organic-2D mixed-dimensional heterojunctions are often considered solely in terms of their energy level alignment, i.e., the relative energies of the frontier molecular orbitals versus the 2D material conduction and valence band edges. While this simple model is frequently adequate to describe doping and photoinduced charge transfer, the tools of molecular chemistry enable additional manipulation of properties in organic-2D heterojunctions that are not accessible in other solid-state systems. Fully exploiting these possibilities requires consideration of the details of the organic adlayer beyond its energy level alignment, including hybridization and electrostatics, molecular orientation and thin-film morphology, nonfrontier orbitals and defects, excitonic states, spin, and chirality. This Perspective explores how these relatively overlooked molecular properties offer unique opportunities for tuning optical and electronic characteristics, thereby guiding the rational design of organic-2D mixed-dimensional heterojunctions with emergent properties.
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Affiliation(s)
- Samuel H Amsterdam
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
- Applied Physics Program, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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Yang F, Wu J, Suwardi A, Zhao Y, Liang B, Jiang J, Xu J, Chi D, Hippalgaonkar K, Lu J, Ni Z. Gate-Tunable Polar Optical Phonon to Piezoelectric Scattering in Few-Layer Bi 2 O 2 Se for High-Performance Thermoelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004786. [PMID: 33314362 DOI: 10.1002/adma.202004786] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 09/30/2020] [Indexed: 05/18/2023]
Abstract
Atomically thin Bi2 O2 Se has emerged as a new member in 2D materials with ultrahigh carrier mobility and excellent air-stability, showing great potential for electronics and optoelectronics. In addition, its ferroelectric nature renders an ultralow thermal conductivity, making it a perfect candidate for thermoelectrics. In this work, the thermoelectric performance of 2D Bi2 O2 Se is investigated over a wide temperature range (20-300 K). A gate-tunable transition from polar optical phonon (POP) scattering to piezoelectric scattering is observed, which facilitates the capacity of drastic mobility engineering in 2D Bi2 O2 Se. Consequently, a high power factor of more than 400 µW m-1 K-2 over an unprecedented temperature range (80-200 K) is achieved, corresponding to the persistently high mobility arising from the highly gate-tunable scattering mechanism. This finding provides a new avenue for maximizing thermoelectric performance by changing the scattering mechanism and carrier mobility over a wide temperature range.
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Affiliation(s)
- Fang Yang
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, China
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Jing Wu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Yunshan Zhao
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Boyuan Liang
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Jie Jiang
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Jianwei Xu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
| | - Kedar Hippalgaonkar
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore
- Department of Materials Science and Engineering, Nanyang Technological University, Technology and Research, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Junpeng Lu
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Zhenhua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 211189, China
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