Directional thermal channeling: A phenomenon triggered by tight packing of heat sources

Ultra-efficient and parameter-free computation of submicron thermal transport with phonon Boltzmann transport equation

Understanding thermal transport at the submicron scale is crucial for engineering applications, especially in the thermal management of electronics and tailoring the thermal conductivity of thermoelectric materials. At the submicron scale, the macroscopic heat diffusion equation is no longer valid and the phonon Boltzmann transport equation (BTE) becomes the governing equation for thermal transport. However, previous thermal simulations based on the phonon BTE have two main limitations: relying on empirical parameters and prohibitive computational costs. Therefore, the phonon BTE is commonly used for qualitatively studying the non-Fourier thermal transport phenomena of toy problems. In this work, we demonstrate an ultra-efficient and parameter-free computational method of the phonon BTE to achieve quantitatively accurate thermal simulation for realistic materials and devices. By properly integrating the phonon properties from first-principles calculations, our method does not rely on empirical material properties input. It can be generally applicable for different materials and the predicted results can match well with experimental results. Moreover, by developing a suitable ensemble of advanced numerical algorithms, our method exhibits superior numerical efficiency. The full-scale (from ballistic to diffusive) thermal simulation of a 3-dimensional fin field-effect transistor with 13 million degrees of freedom, which is prohibitive for existing phonon BTE solvers even on supercomputers, can now be completed within two hours on a single personal computer. Our method makes it possible to achieve the predictive design of realistic nanostructures for the desired thermal conductivity. It also enables accurately resolving the temperature profiles at the transistor level, which helps in better understanding the self-heating effect of electronics.

Universal Behavior of Highly Confined Heat Flow in Semiconductor Nanosystems: From Nanomeshes to Metalattices

Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity of bulk models, while first-principles calculations are too computationally expensive to model real devices. Here we use extreme ultraviolet beams to study phonon transport dynamics in a 3D nanostructured silicon metalattice with deep nanoscale feature size and observe dramatically reduced thermal conductivity relative to bulk. To explain this behavior, we develop a predictive theory wherein thermal conduction separates into a geometric permeability component and an intrinsic viscous contribution, arising from a new and universal effect of nanoscale confinement on phonon flow. Using experiments and atomistic simulations, we show that our theory applies to a general set of highly confined silicon nanosystems, from metalattices, nanomeshes, porous nanowires, to nanowire networks, of great interest for next-generation energy-efficient devices.

Temporal and spectral multiplexing for EUV multibeam ptychography with a high harmonic light source

We demonstrate temporally multiplexed multibeam ptychography implemented for the first time in the EUV, by using a high harmonic based light source. This allows for simultaneous imaging of different sample areas, or of the same area at different times or incidence angles. Furthermore, we show that this technique is compatible with wavelength multiplexing for multibeam spectroscopic imaging, taking full advantage of the temporal and spectral characteristics of high harmonic light sources. This technique enables increased data throughput using a simple experimental implementation and with high photon efficiency.

Nonmonotonic heat dissipation phenomenon in close-packed hotspot systems

Transient heat dissipation in close-packed quasi-two-dimensional nanoline and three-dimensional nanocuboid hotspot systems is studied based on the phonon Boltzmann transport equation. It is found that, counterintuitively, the heat dissipation efficiency is not a monotonic function of the distance between adjacent nanoscale heat sources but reaches the highest value when this distance is comparable to the phonon mean free path. This is due to the competition of two thermal transport processes: quasiballistic transport when phonons escape from the nanoscale heat source and the scattering among phonons originating from the adjacent nanoscale heat source.

Anisotropic Phononic and Electronic Thermal Transport in BeN4

Beryllium polynitride (BeN₄) has been recently synthesized under high-pressure conditions [Bykov et al. Phys. Rev. Lett. 2021, 126, 175501]. Its anisotropic lattice structure dependent on the applied pressure motivates exploration of its thermal transport properties with a theoretical framework that combines the Boltzmann transport equation with ab initio calculations. The bonding anisotropy (impacting the phonon and electron group velocities) and bonding anharmonicity (captured through three- and four-phonon scatterings) are reflected in the strong anisotropy of both phononic and electronic components of the thermal conductivity. Moreover, the pressure-driven evolution of the interlayer Be-N bonding, from partially covalent (under high-pressure synthesis conditions) to van der Waals (under ambient pressure), drives a largely interlayer thermal conductivity. These findings highlight an alternative strategy for achieving directional control of the thermal transport in synthetic materials.