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Hu Y, Shen Y, Bao H. Ultra-efficient and parameter-free computation of submicron thermal transport with phonon Boltzmann transport equation. FUNDAMENTAL RESEARCH 2024; 4:907-915. [PMID: 39156572 PMCID: PMC11330117 DOI: 10.1016/j.fmre.2022.06.007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/10/2022] [Revised: 05/22/2022] [Accepted: 06/07/2022] [Indexed: 10/17/2022] Open
Abstract
Understanding thermal transport at the submicron scale is crucial for engineering applications, especially in the thermal management of electronics and tailoring the thermal conductivity of thermoelectric materials. At the submicron scale, the macroscopic heat diffusion equation is no longer valid and the phonon Boltzmann transport equation (BTE) becomes the governing equation for thermal transport. However, previous thermal simulations based on the phonon BTE have two main limitations: relying on empirical parameters and prohibitive computational costs. Therefore, the phonon BTE is commonly used for qualitatively studying the non-Fourier thermal transport phenomena of toy problems. In this work, we demonstrate an ultra-efficient and parameter-free computational method of the phonon BTE to achieve quantitatively accurate thermal simulation for realistic materials and devices. By properly integrating the phonon properties from first-principles calculations, our method does not rely on empirical material properties input. It can be generally applicable for different materials and the predicted results can match well with experimental results. Moreover, by developing a suitable ensemble of advanced numerical algorithms, our method exhibits superior numerical efficiency. The full-scale (from ballistic to diffusive) thermal simulation of a 3-dimensional fin field-effect transistor with 13 million degrees of freedom, which is prohibitive for existing phonon BTE solvers even on supercomputers, can now be completed within two hours on a single personal computer. Our method makes it possible to achieve the predictive design of realistic nanostructures for the desired thermal conductivity. It also enables accurately resolving the temperature profiles at the transistor level, which helps in better understanding the self-heating effect of electronics.
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Affiliation(s)
- Yue Hu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yongxing Shen
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Hua Bao
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
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McBennett B, Beardo A, Nelson EE, Abad B, Frazer TD, Adak A, Esashi Y, Li B, Kapteyn HC, Murnane MM, Knobloch JL. Universal Behavior of Highly Confined Heat Flow in Semiconductor Nanosystems: From Nanomeshes to Metalattices. NANO LETTERS 2023; 23:2129-2136. [PMID: 36881964 DOI: 10.1021/acs.nanolett.2c04419] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Nanostructuring on length scales corresponding to phonon mean free paths provides control over heat flow in semiconductors and makes it possible to engineer their thermal properties. However, the influence of boundaries limits the validity of bulk models, while first-principles calculations are too computationally expensive to model real devices. Here we use extreme ultraviolet beams to study phonon transport dynamics in a 3D nanostructured silicon metalattice with deep nanoscale feature size and observe dramatically reduced thermal conductivity relative to bulk. To explain this behavior, we develop a predictive theory wherein thermal conduction separates into a geometric permeability component and an intrinsic viscous contribution, arising from a new and universal effect of nanoscale confinement on phonon flow. Using experiments and atomistic simulations, we show that our theory applies to a general set of highly confined silicon nanosystems, from metalattices, nanomeshes, porous nanowires, to nanowire networks, of great interest for next-generation energy-efficient devices.
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Affiliation(s)
- Brendan McBennett
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Albert Beardo
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Emma E Nelson
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Begoña Abad
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Travis D Frazer
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Amitava Adak
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Yuka Esashi
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Baowen Li
- Department of Materials Science and Engineering, Department of Physics, Southern University of Science and Technology, Shenzhen 518055, PR China
- Department of Mechanical Engineering, Department of Physics, University of Colorado, Boulder, Colorado 80309, United States
| | - Henry C Kapteyn
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Margaret M Murnane
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
| | - Joshua L Knobloch
- Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado and NIST, Boulder, Colorado 80309, United States
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Brooks NJ, Wang B, Binnie I, Tanksalvala M, Esashi Y, Knobloch JL, Nguyen QLD, McBennett B, Jenkins NW, Gui G, Zhang Z, Kapteyn HC, Murnane MM, Bevis CS. Temporal and spectral multiplexing for EUV multibeam ptychography with a high harmonic light source. OPTICS EXPRESS 2022; 30:30331-30346. [PMID: 36242139 DOI: 10.1364/oe.458955] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 07/13/2022] [Indexed: 06/16/2023]
Abstract
We demonstrate temporally multiplexed multibeam ptychography implemented for the first time in the EUV, by using a high harmonic based light source. This allows for simultaneous imaging of different sample areas, or of the same area at different times or incidence angles. Furthermore, we show that this technique is compatible with wavelength multiplexing for multibeam spectroscopic imaging, taking full advantage of the temporal and spectral characteristics of high harmonic light sources. This technique enables increased data throughput using a simple experimental implementation and with high photon efficiency.
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Zhang C, Wu L. Nonmonotonic heat dissipation phenomenon in close-packed hotspot systems. Phys Rev E 2022; 106:014111. [PMID: 35974599 DOI: 10.1103/physreve.106.014111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Transient heat dissipation in close-packed quasi-two-dimensional nanoline and three-dimensional nanocuboid hotspot systems is studied based on the phonon Boltzmann transport equation. It is found that, counterintuitively, the heat dissipation efficiency is not a monotonic function of the distance between adjacent nanoscale heat sources but reaches the highest value when this distance is comparable to the phonon mean free path. This is due to the competition of two thermal transport processes: quasiballistic transport when phonons escape from the nanoscale heat source and the scattering among phonons originating from the adjacent nanoscale heat source.
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Affiliation(s)
- Chuang Zhang
- Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Lei Wu
- Department of Mechanics and Aerospace Engineering, Southern University of Science and Technology, Shenzhen 518055, China
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Tong Z, Pecchia A, Yam C, Zhou L, Dumitrică T, Frauenheim T. Anisotropic Phononic and Electronic Thermal Transport in BeN 4. J Phys Chem Lett 2022; 13:4501-4505. [PMID: 35575731 DOI: 10.1021/acs.jpclett.2c01104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Beryllium polynitride (BeN4) has been recently synthesized under high-pressure conditions [Bykov et al. Phys. Rev. Lett. 2021, 126, 175501]. Its anisotropic lattice structure dependent on the applied pressure motivates exploration of its thermal transport properties with a theoretical framework that combines the Boltzmann transport equation with ab initio calculations. The bonding anisotropy (impacting the phonon and electron group velocities) and bonding anharmonicity (captured through three- and four-phonon scatterings) are reflected in the strong anisotropy of both phononic and electronic components of the thermal conductivity. Moreover, the pressure-driven evolution of the interlayer Be-N bonding, from partially covalent (under high-pressure synthesis conditions) to van der Waals (under ambient pressure), drives a largely interlayer thermal conductivity. These findings highlight an alternative strategy for achieving directional control of the thermal transport in synthetic materials.
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Affiliation(s)
- Zhen Tong
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Beijing Computational Science Research Center, Beijing 100193, China
| | | | - ChiYung Yam
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
| | - Liujiang Zhou
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Traian Dumitrică
- Department of Mechanical Engineering, University of Minnesota, Minnesota 55455, United States
| | - Thomas Frauenheim
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Beijing Computational Science Research Center, Beijing 100193, China
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 2835, Germany
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