Structures, thermochemistry, and electron affinities of the disilicon fluorides, Si2Fn/Si2F−n(n= 1–6)

A Class of Computationally Designed Tri-Coordinate Cyclic Silylenes RSi(µ-R)2AlR2

With the aim of designing novel low-valent silylenes, herein we report the first systematic investigation of the SiAlR5 system. Based on the ‘topology’ isomeric search strategy, four classes of isomers, i.e. RSi(μ-R)2AlR2 1, R3Si-AlR2 2, R2Si(μ-R)AlR2 3, and R2Si-AlR3 4 were identified. For 12 groups with an electron lone-pair, i.e. R = F, NH2,OH, SH, OMe, PMe2, SMe, OEt, PEt2, SEt, OPh, and PPh2, the tri-coordinate silylene 1 is the most stable structure, which contains two sets of intermolecular donor–acceptor interactions. In accordance with the ‘silylene’ term, the Si-centre can undergo both a nucleophilic reaction and insertion reaction. Moreover, coupling AlR3 (R = OR′ and PR′2) (R′ = H, Me, Et, and Ph) with the known cyclic di-coordinate silylene could lead to stable tri-coordinate silylenes. These novel tri-coordinate silylenes strongly welcome laboratory studies in near future.

Structures and electron affinities of the di-arsenic fluorides As2Fn/As2F n− (n= 1-8)

Developments in the preparation of new materials for microelectronics are focusing new attention on molecular systems incorporating several arsenic atoms. A systematic investigation of the As2Fn/As2Fn- systems was carried out using Density Functional Theory methods and a DZP++ quality basis set. Global and low-lying local geometric minima and relative energies are discussed and compared. The three types of neutral-anion separations reported in this work are: the adiabatic electron affinity (EAad), the vertical electron affinity (EAvert), and the vertical detachment energy (VDE). Harmonic vibrational frequencies pertaining to the global minimum for each compound are reported. From the first four studied species (As2Fn, n=1-4), all neutral molecules and their anions are shown to be stable with respect to As-As bond breaking. The neutral As2F molecule and its anion are predicted to have Cs symmetry. We find the trans F-As-As-F isomer of C2h symmetry and a pyramidalized vinylidene-like As-As-F2- isomer of Cs symmetry to be the global minima for the As2F2 and As2F2- species, respectively. The lowest lying minima of As2F3 and As2F3- are vinyl radical-like structures F-As-As-F2 of Cs symmetry. The neutral As2F4 global minimum is a trans-bent (like Si2H4) F2-As-As-F2 isomer of C2 symmetry, while its anion is predicted to have an unusual fluorine-bridged (C(1)) structure. The global minima of the neutral As2Fn species, n=5-8, are weakly bound complexes, held together by dipole-dipole interactions. All such structures have the AsFm-AsFn form, where (m,n) is (2,3) for As2F5, (3,3) for As2F6, (4,3) for As2F7), and (5,3) for As2F8. For As2F8 the beautiful pentavalent F4As-AsF4 structure (analogous to the stable AsF5 molecule) lies about 30 kcal/mol above the AsF3 . . . AsF5 complex. The stability of AsF(5) depends crucially on the strong As-F bonds, and replacing one of these with an As-As bond (in F4As-AsF4) has a very negative impact on the molecule's stability. The anions As2Fn-, n=5-8, are shown to be stable with respect to the As-As bond breaking, and we predict that all of them have fluorine-bridged or fluorine-linked structures. The zero-point vibrational energy corrected adiabatic electron affinities are predicted to be 2.28 eV (As2F), 1.95 eV (As2F2), 2.39 eV (As2F3), 1.71 eV (As2F4), 2.72 eV (As2F5), 1.79 eV (As2F6), 5.26 eV (As2F7), and 3.40 eV (As2F8) from the BHLYP method. Vertical detachment energies are rather large, especially for species with fluorine-bridged global minima, having values up to 6.45 eV (As2F7, BHLYP).

Molecules for materials: structures, thermochemistry, and electron affinities of the digermanium fluorides Ge2Fn/Ge2Fn- (n = 1-6): a wealth of unusual structures

A systematic investigation of Ge2Fn/Ge2Fn- systems was carried out with five density functional theory (DFT) methods in conjunction with DZP++ basis sets. For each compound various structures, including minima, transition states and other energetically low lying stationary points, were optimized. The geometries and relative energies are discussed and compared. Adiabatic electron affinities, vertical electron affinities and anion vertical detachment energies are reported. Three types of dissociation energies pertaining to the global minima for each compound are reported. The theoretical predictions are in good agreement with the limited available experimental results. Many unusual structural features are predicted for these systems. Neutral Ge2F is predicted to have a bridged C2v structure, while its anion is very floppy, with the bridged structure very slightly favoured. The Ge2F2 molecule is predicted to have the butterfly structure known from experiment for Si2H2, while the Ge2F3- ion has a trans-bent structure. Ge2F3 is predicted to have an unprecedented FGe-F-GeF structure with no Ge-Ge bond, while its anion has a somewhat more conventional monobridged structure, analogous to that of the nonclassical vinyl cation. Neutral Ge2F4 has a dibridged structure of C2h symmetry, while its anion has a trans-bent structure with a very long Ge-Ge bond. The Ge2F5 molecule is doubly bridged and has no Ge-Ge bond, while the anion is of the type F2Ge-F-GeF2, again with no Ge-Ge bond. Ge2F6 has the anticipated ethane structure, as does its anion, but with a very long Ge-Ge bond. The adiabatic electron affinities (EAad) are predicted to be 2.12 (Ge2F), 2.03 (Ge2F2), 2.02 (Ge2F3), 1.64 (Ge2F4), 4.57 (Ge2F5), and 2.66 eV (Ge2F6), respectively, by the BHLYP method, which is regarded as the best method in the present paper for predicting EAs. Comparisons with the analogous C2Fn and Si2Fn systems reveals some interesting trends and differences. For example, while C2F6 will not capture an electron, Si2F6 is predicted to have small electron affinity (0.73 eV), while that of Ge2F6 is substantial. The same trend to larger EAs on going down the Periodic Table is seen for the X2F5 systems, with 1.77 (C2F5), 2.68 (Si2F5), and 4.57 eV (Ge2F5). However, the EAs do not follow a monotonic trend for the X2F, X2F3 and X2F4 systems with respect to the series X = C, Si, Ge.