Single molecule studies of quantum dot fluorescence intermittency: evidence for both dark and light-assisted blinking dynamics

Ultrafast Laser Studies of Two-Photon Excited Fluorescence Intermittency in Single CdSe/ZnS Quantum Dots

Two-photon fluorescence microscopy of single quantum dots conditions has been reported by several groups, with contrasting observations regarding the kinetics and dynamics of fluorescence intermittency or "blinking". Here, we investigate the power dependence, kinetics, and statistics of two photon-excited fluorescence intermittency from single CdSe/ZnS quantum dots in a solid PMMA film as a function of sub-bandgap laser intensity at 800 nm. Fluorescence intermittency is observed at all excitation powers and a quadratic (n = 1.97(3)) dependence of the shot noise-limited fluorescence intensity on the incident laser power is verified, confirming essentially zero background contribution from one-photon excitation processes. Such analyses permit two photon absorption cross sections for single quantum dots to be extracted quantitatively from the data, which reveal good agreement with those obtained from previous two-photon FCS measurements. Strictly inverse power law-distributed off-state dwell times are observed for all excitation powers, with a mean power law exponent ⟨m(off)⟩ = 1.65(4) in excellent agreement with the behavior observed under one-photon excitation conditions. Finally, a superquadratic (n = 2.3(2)) rather than quartic (n = 4) power dependence is observed for the on-state blinking dwell times, which we kinetically analyze and interpret in terms of a novel 2 + 1 "hot" exciton ionization/blinking mechanism due to partially saturated 1-photon sub-bandgap excitation out of the two-photon single exciton state. The kinetic results are consistent with quantum dot photoionization quantum yields from "hot" exciton states (4(1) × 10(-6)) comparable with experimental estimates (10(-6)-10(-5)) of Auger ionization efficiencies out of the biexcitonic state.

Room Temperature Single-Photon Emission from Individual Perovskite Quantum Dots

Lead-halide-based perovskites have been the subject of numerous recent studies largely motivated by their exceptional performance in solar cells. Electronic and optical properties of these materials have been commonly controlled by varying the composition (e.g., the halide component) and/or crystal structure. Use of nanostructured forms of perovskites can provide additional means for tailoring their functionalities via effects of quantum confinement and wave function engineering. Furthermore, it may enable applications that explicitly rely on the quantum nature of electronic excitations. Here, we demonstrate that CsPbX3 quantum dots (X = I, Br) can serve as room-temperature sources of quantum light, as indicated by strong photon antibunching detected in single-dot photoluminescence measurements. We explain this observation by the presence of fast nonradiative Auger recombination, which renders multiexciton states virtually nonemissive and limits the fraction of photon coincidence events to ∼6% on average. We analyze limitations of these quantum dots associated with irreversible photodegradation and fluctuations ("blinking") of the photoluminescence intensity. On the basis of emission intensity-lifetime correlations, we assign the "blinking" behavior to random charging/discharging of the quantum dot driven by photoassisted ionization. This study suggests that perovskite quantum dots hold significant promise for applications such as quantum emitters; however, to realize this goal, one must resolve the problems of photochemical stability and photocharging. These problems are largely similar to those of more traditional quantum dots and, hopefully, can be successfully resolved using advanced methodologies developed over the years in the field of colloidal nanostructures.

Thermal Recovery of Colloidal Quantum Dot Ensembles Following Photoinduced Dimming

Colloidal CdSe quantum dot (QD) core ensembles were photodimmed and allowed to recover in the dark using ambient thermal energy at a range of temperatures. Nonlinear thermal recovery is well described by a stretched exponential function, and further analysis yields an underlying probability distribution of rate constants. Casting the rate constants as a collection of first-order activated processes provides an activation barrier probability distribution with significant density at room-temperature thermal energy that peaks at 200 meV before decaying to zero. This treatment for the recovery transition intuitively describes the distributed kinetics observed and complements commonly proposed blinking mechanisms.

Photoluminescence intermittency from single quantum dots to organic molecules: emerging themes

Recent experimental and theoretical studies of photoluminescence intermittency (PI) or “blinking” exhibited by single core/shell quantum dots and single organic luminophores are reviewed. For quantum dots, a discussion of early models describing the origin of PI in these materials and recent challenges to these models are presented. For organic luminophores the role of electron transfer, proton transfer and other photophysical processes in PI are discussed. Finally, new experimental and data analysis methods are outlined that promise to be instrumental in future discoveries regarding the origin(s) of PI exhibited by single emitters.

Photoinduced surface trapping and the observed carrier multiplication yields in static CdSe nanocrystal samples

Photocharging has been suggested recently as the explanation for the spread of carrier multiplication yields reported by different groups. If this hypothesis can be plausible in the case of PbSe, it is inconsistent with the reported experimental data relative to CdSe nanocrystals and cannot therefore explain the large discrepancies found in that material system between static and stirred samples. An alternative explanation, photoinduced surface trapping, is suggested here, based on the results of atomistic semiempirical pseudopotential calculations of the Auger recombination rates in a number of excitonic configurations including a variety of surface traps, which show that the photoinduced surface trapping of the hole, which leaves the core negatively charged (but the nanocrystal neutral overall), can lead to recombination rates that are indistinguishable from those of a conventional biexciton with four core-delocalized carriers and therefore result in exaggerated CM yields in static samples. In contrast, the recombination rate of a charged exciton is found to be at least a factor of 2.3 smaller than that of the biexciton and therefore easily distinguishable from it experimentally. Although increased trapping at surface states was dismissed as unlikely for PbSe nanocrystals, in the case of CdSe, this hypothesis is further supported by much experimental evidence including recent spectroscopic measurements on CdSe nanostructures, single-nanocrystal photoionization studies on CdSe core/shell nanocrystals, and state-resolved transient absorption studies of biexcitonic states, all showing increased probability of surface trapping for highly excited states. These results suggest that multicarrier processes could be mediated by different mechanisms in CdSe and PbSe nanocrystals.