Visualising many-body electron dynamics using one-body densities and orbitals

Dipole-Induced Transition Orbitals: A Novel Tool for Investigating Optical Transitions in Extended Systems

Optical absorption spectra for nanostructures and solids can be obtained from the macroscopic dielectric function within the random phase approximation. While experimental spectra can be reproduced with good accuracy, important properties, such as the charge-transfer character associated with a particular transition, are not retrievable. This contribution presents a computationally inexpensive method for the analysis of optical and excitonic properties for extended systems based on solely their electronic ground-state structure. We formulate a perturbative orbital transformation theory based on dipole-induced transition moments between orbitals, which yields correlated pairs of particle and hole functions. To demonstrate the potency of this new transformation formalism, we investigate the nature of excitations in inorganic molecular complexes and in extended systems. With our method, it is possible to extract mechanistic insights from the transitions observed in the optical spectrum, without requiring explicit calculation of the many-electron excited states.

Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by ultrafast transient absorption spectroscopy in the extreme ultraviolet at the germanium M_4,5 edge. We decompose the spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8 × 10²⁰ cm⁻³. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first-order electron and hole decay of ∼1 ps suggests a Shockley–Read–Hall recombination mechanism. The simultaneous observation of electrons and holes with extreme ultraviolet transient absorption spectroscopy paves the way for investigating few- to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürch et al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.