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Li CG, Gao JH, Zhang J, Song WT, Liu SQ, Gao SZ, Ren BZ, Hu YF. Structures, stabilities and electronic properties of boron-doped silicon clusters B 3Si n ( n=1–17) and their anions. Mol Phys 2018. [DOI: 10.1080/00268976.2018.1516897] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
Affiliation(s)
- Cheng-Gang Li
- College of Physics and Electronic Engineering, Quantum Materials Research Center, Zhengzhou Normal University, Zhengzhou, People’s Republic of China
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, People’s Republic of China
| | - Jin-Hai Gao
- College of Physics and Electronic Engineering, Quantum Materials Research Center, Zhengzhou Normal University, Zhengzhou, People’s Republic of China
| | - Jie Zhang
- College of Physics and Electronic Engineering, Quantum Materials Research Center, Zhengzhou Normal University, Zhengzhou, People’s Republic of China
| | - Wan-Ting Song
- College of Physics and Electronic Engineering, Quantum Materials Research Center, Zhengzhou Normal University, Zhengzhou, People’s Republic of China
| | - Shui-Qing Liu
- College of Physics and Electronic Engineering, Quantum Materials Research Center, Zhengzhou Normal University, Zhengzhou, People’s Republic of China
| | - Si-Zhuo Gao
- College of Physics and Electronic Engineering, Quantum Materials Research Center, Zhengzhou Normal University, Zhengzhou, People’s Republic of China
| | - Bao-Zeng Ren
- School of Chemical Engineering and Energy, Zhengzhou University, Zhengzhou, People’s Republic of China
| | - Yan-Fei Hu
- School of Physics and Electronic Engineering, Sichuan University of Science & Engineering, Zigong, People’s Republic of China
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, People’s Republic of China
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