Mélinon P, Hannour A, Bardotti L, Prével B, Gierak J, Bourhis E, Faini G, Canut B. Ion beam nanopatterning in graphite: characterization of single extended defects.
NANOTECHNOLOGY 2008;
19:235305. [PMID:
21825788 DOI:
10.1088/0957-4484/19/23/235305]
[Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The morphology and the electronic structure of a single focused ion-beam-induced artificial extended defect is probed by several methods including micro-Raman spectroscopy, atomic force and scanning tunneling microscopies and Monte Carlo and/or semi-analytical simulation within standard codes. The efficiency of the artificial defect for deposited metallic cluster pinning is also investigated. We show a correlation between the ion dose, morphology, electronic structure and cluster trapping efficiency. At room temperature, cluster pinning is efficient when the displacement per atom is one or more. Well-ordered patterned cluster networks are considered for potential applications.
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