Dissociated and faceted large-angle coincident-site-lattice boundaries in silicon

Atomic-scale observation of dynamic grain boundary structural transformation during shear-mediated migration

Grain boundary (GB) structural change is commonly observed during and after stress-driven GB migration in nanocrystalline materials, but its exact atomic scale transformation has not been explored experimentally. Here, using in situ high-resolution transmission electron microscopy combined with molecular dynamics simulations, we observed the dynamic GB structural transformation stemming from reversible facet transformation and GB dissociation during the shear-mediated migration of faceted GBs in gold nanocrystals. A reversible transformation was found to occur between (002)/(111) and Σ11(113) GB facets, accomplished by the coalescence and detachment of [Formula: see text]-type GB steps or disconnections that mediated the GB migration. In comparison, the dissociation of (002)/(111) GB into Σ11(113) and Σ3(111) GBs occurred via the reaction of [Formula: see text]-type steps that involved the emission of partial dislocations. Furthermore, these transformations were loading dependent and could be accommodated by GB junctions. This work provides atomistic insights into the dynamic structural transformation during GB migration.

Investigation of the Grain Boundary Character and Dislocation Density of Different Types of High Performance Multicrystalline Silicon

Wafers from three heights and two different lateral positions (corner and centre) of four industrial multicrystalline silicon ingots were analysed with respect to their grain structure and dislocation density. Three of the ingots were non-seeded and one ingot was seeded. It was found that there is a strong correlation between the ratio of the densities of (coincidence site lattice) CSL grain boundaries and high angle grain boundaries in the bottom of a block and the dislocation cluster density higher in the block. In general, the seeded blocks, both the corner and centre block, have a lower dislocation cluster density than in the non-seeded blocks, which displayed a large variation. The density of the random angle boundaries in the corner blocks of the non-seeded ingots was similar to the density in the seeded ingots, while the density in the centre blocks was lower. However, the density of CSL boundaries was higher in all the non-seeded than in the seeded ingots. It appears that both of these grain boundary densities influence the presence of dislocation clusters, and we propose they act as dislocation sinks and sources, respectively. The ability to generate small grain size material without seeding appears to be correlated to the morphology of the coating, which is generally rougher in the corner positions than in the middle. Furthermore, the density of twins and CSL boundaries depends on the growth mode during initial growth and thus on the degree of supercooling. Controlling both these properties is important in order to be able to successfully produce uniform quality high-performance multicrystalline silicon by the advantageous non-seeding method.

Strain-Induced Asymmetric Line Segregation at Faceted Si Grain Boundaries

The unique combination of atomic-scale composition measurements, employing atom probe tomography, atomic structure determination with picometer resolution by aberration-corrected scanning transmission electron microscopy, and atomistic simulations reveals site-specific linear segregation features at grain boundary facet junctions. More specific, an asymmetric line segregation along one particular type of facet junction core, instead of a homogeneous decoration of the facet planes, is observed. Molecular-statics calculations show that this segregation pattern is a consequence of the interplay between the asymmetric core structure and its corresponding local strain state. Our results contrast with the classical view of a homogeneous decoration of the facet planes and evidence a complex segregation patterning.