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Citation(s) in RCA

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For: Muto S, Takeda S, Hirata M, Fujii K, Ibe K. Structure of planar aggregates of si in heavily si-doped gaas. ACTA ACUST UNITED AC 1992. [DOI: 10.1080/01418619208201555] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Number Cited by Other Article(s)
1
Domke C, Ebert P, Heinrich M, Urban K. Microscopic identification of the compensation mechanisms in Si-doped GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:10288-10291. [PMID: 9984805 DOI: 10.1103/physrevb.54.10288] [Citation(s) in RCA: 108] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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