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Du JL, Fang Y, Fu EG, Ding X, Yu KY, Wang YG, Wang YQ, Baldwin JK, Wang PP, Bai Q. What determines the interfacial configuration of Nb/Al 2O 3 and Nb/MgO interface. Sci Rep 2016; 6:33931. [PMID: 27698458 PMCID: PMC5048433 DOI: 10.1038/srep33931] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2016] [Accepted: 08/25/2016] [Indexed: 12/02/2022] Open
Abstract
Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed.
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Affiliation(s)
- J L Du
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Y Fang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - E G Fu
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
| | - X Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - K Y Yu
- Department of Materials Science and Engineering, China University of Petroleum, Beijing 102249, P. R. China
| | - Y G Wang
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Y Q Wang
- Experimental Physical Sciences Directorate, Los Alamos National Laboratory, Los Alamos, NM 87544, USA
| | - J K Baldwin
- Experimental Physical Sciences Directorate, Los Alamos National Laboratory, Los Alamos, NM 87544, USA
| | - P P Wang
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Q Bai
- State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China
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Findlay S, Shibata N, Ikuhara Y. What atomic resolution annular dark field imaging can tell us about gold nanoparticles on TiO2 (110). Ultramicroscopy 2009; 109:1435-46. [DOI: 10.1016/j.ultramic.2009.07.006] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2009] [Revised: 07/09/2009] [Accepted: 07/17/2009] [Indexed: 11/28/2022]
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Schweinfest R, Köstlmeier S, Ernst F, Elsäser C, Wagner T, Finnis MW. Atomistic and electronic structure of Al/MgAl2O4and Ag/MgAl2O4interfaces. ACTA ACUST UNITED AC 2001. [DOI: 10.1080/01418610151133375] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
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Abstract
When single crystals of two different materials are in contact at a sharp interface, the orientation relationship between them is said to be epitaxial and the configuration of the atoms at the two sides of the interface is such that the lattice mismatch between them is accommodated in the least energetic way. Among other factors, this depends on the bonding between the atoms on the two sides of the interface. In this paper, the relaxation of strain in thin films grown epitaxially on dissimilar substrates is first discussed theoretically for cases of small and large lattice mismatch. In a following section, two metal-ceramics heteroepitaxial systems are investigated in detail by various techniques of transmission electron microscopy. One case, vanadium on MgO, corresponds to a small-mismatched system and the interface changes from coherent to semicoherent above a critical thickness; this turns out to be much larger than the expected value. In the other case-vanadium on the basal and rhombohedral (R) planes of sapphire-the lattice mismatch is large and misfit dislocations exist from the very initial stages of deposition. It is argued that although misfit dislocations in small and large lattice-mismatched systems are geometrically similar, their physical nature is different.
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Affiliation(s)
- Y Ikuhara
- Department of Materials Science, The University of Tokyo, Hongo, Japan
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