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For:	Gheorghiu A, Thèye ML. Disorder effects and the optical properties of amorphous GaAs and GaP. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418638108222561] [Citation(s) in RCA: 43] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

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Cited by Other Article(s)

O'reilly EP, Robertson J. The electronic structure of defects in amorphous GaAs. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818408238850] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

Robertson J. Defects in amorphous semiconductors. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/13642818508240562] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

Robertson J, O'reilly EP. The detection of chemical order in non-crystalline alloys from their valence s bands. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418638308228267] [Citation(s) in RCA: 19] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]

Dixmier J, Gheorghiu A, Theye ML. Local order in amorphous III-V compounds A1-xBxby electron diffraction, in relation with electronic properties. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/17/13/010] [Citation(s) in RCA: 27] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]

Fois E, Selloni A, Pastore G, Zhang Q, Car R. Structure, electronic properties, and defects of amorphous gallium arsenide. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;45:13378-13382. [PMID: 10001421 DOI: 10.1103/physrevb.45.13378] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

Hörig W, Bouamama K, Neumann H, Nobes MJ. Optical absorption spectra of magnesium-implanted GaP. CRYSTAL RESEARCH AND TECHNOLOGY 1990. [DOI: 10.1002/crat.2170250612] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]

Mohamedi A, Thèye ML, Vergnat M, Marchal G, Piecuch M. Optical studies of bonding in coevaporated amorphous silicon-tin alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:3711-3719. [PMID: 9948693 DOI: 10.1103/physrevb.39.3711] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]

O'Reilly EP, Robertson J. Electronic structure of amorphous III-V and II-VI compound semiconductors and their defects. PHYSICAL REVIEW. B, CONDENSED MATTER 1986;34:8684-8695. [PMID: 9939588 DOI: 10.1103/physrevb.34.8684] [Citation(s) in RCA: 57] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]

Boudriot H, Kubier B, Deus K, Gründler R, Kusior E. Influence of film structure on the electron energy loss spectra of GaAs thin films. CRYSTAL RESEARCH AND TECHNOLOGY 1983. [DOI: 10.1002/crat.2170180811] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]

Defects in amorphous III-V compounds. ACTA ACUST UNITED AC 1982. [DOI: 10.1016/0165-1633(82)90076-4] [Citation(s) in RCA: 25] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]