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Demichelis F, Crovini G, Pirri CF, Tresso E, Galloni R, Rizzoli R, Summonte C, Zignani F, Rava P, Madan A. The influence of hydrogen dilution on the optoelectronic and structural properties of hydrogenated amorphous silicon carbide films. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240116] [Citation(s) in RCA: 28] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- F. Demichelis
- a Dipartimento di Fisica , Politecnico , Torino , Italy
| | - G. Crovini
- a Dipartimento di Fisica , Politecnico , Torino , Italy
| | - C. F. Pirri
- a Dipartimento di Fisica , Politecnico , Torino , Italy
| | - E. Tresso
- a Dipartimento di Fisica , Politecnico , Torino , Italy
| | - R. Galloni
- b Istituto di Chimica e Tecnologia dei Materiali e dei Componente per L'Elettronica (LAMEL), Consiglio Nazionale delle Ricerche , Bologna , Italy
| | - R. Rizzoli
- b Istituto di Chimica e Tecnologia dei Materiali e dei Componente per L'Elettronica (LAMEL), Consiglio Nazionale delle Ricerche , Bologna , Italy
| | - C. Summonte
- b Istituto di Chimica e Tecnologia dei Materiali e dei Componente per L'Elettronica (LAMEL), Consiglio Nazionale delle Ricerche , Bologna , Italy
| | - F. Zignani
- c Dipartimento di Chimica Applicata e scienza dei Materiali , Facolta di Ingegneria , Bologna , Italy
| | - P. Rava
- d Elettrorava , Torino , Italy
| | - A. Madan
- e MVSystems Inc. , Golden , Colorado , 80401 , USA
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Wang Q, Antoniadis H, Schiff EA, Guha S. Electron-drift-mobility measurements and exponential conduction-band tails in hydrogenated amorphous silicon-germanium alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9435-9448. [PMID: 10005010 DOI: 10.1103/physrevb.47.9435] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Abstract
Recent efforts to optimize undoped, glow-discharge hydrogenated amorphous silicon-carbon alloys (a-SiC:H) with 1.9-2.0 eV bandgaps for solar cell applications are reviewed. Hydrogen dilution coupled with relatively low substrate temperatures (below 200 °C) have led to great improvements in the optical and phototransport properties of a-SiC:H films. The issue of alternative carbon feedstocks other than methane (CH4) will be explored. The improved a-SiC:H alloys have resulted in solar cells with high open circuit voltages (V∞ > 1.0 volt) and high fill factors (> 0.7). Further, the a-SiC:H solar cell instability upon prolonged light exposure has been much reduced. Correlation will be made between the properties of bulk undoped a-SiC:H films and the performance of p-i-nsingle junction solar cells using corresponding a-SiC:H thin i-layers.
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Luft W, Stafford B, von Roedern B. Needs of the amorphous silicon program with respect to stabilized module performance. ACTA ACUST UNITED AC 1991. [DOI: 10.1016/0379-6787(91)90051-p] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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