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Muri J, Steinbrüchel C. Universal Energy Dependence of Sputtering Yields At Low Ion Energy. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-223-41] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTSputtering yields Y(E)at ion energies E keV are shown to be described by the equation Y(E) = A(En - ) where A, n, and the threshold energy Eth are constants characteristic for a particular projectile/target combination. Examination of a wide variety of systems reveals that n = 0.5 provides an excellent universal representation of a large body of data, including physical sputtering of metals by noble gas ions, selfsputtering of metals, as well as physical and chemical sputtering of Si and SiO2. The above value for n is consistent with a 1/r4 power law atom-atom interaction potential within Sigmund's theory of sputtering. Another conclusion is that the effect of Eth on Y(E) must be taken into account at ion energies as high as 1 keV, not just near the sputtering threshold.
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Strydom HJ, Gries WH. A comparison of three versions of sigmund's model of sputtering using experimental results. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01422448408209709] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Rauschenbach B, Hohmuth K. Analysis of Heavy-Ion Sputtering Based on the Shock Wave Model. ACTA ACUST UNITED AC 1983. [DOI: 10.1002/pssa.2210790209] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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