He J, Zhang L, Zhang J, Ma C, Liu F, Chan M. A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs.
MOLECULAR SIMULATION 2009. [DOI:
10.1080/08927020802706995]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]