Feature article: Electronic transport in granular metal films†

(Magneto)Transport Properties of (TiZrNbNi)1-xCux and (TiZrNbCu)1-xCox Complex Amorphous Alloys

We present a systematic study of electrical resistivity, superconductive transitions and the Hall effect for three systems of compositionally complex amorphous alloys of early (TE) and late (TL) transition metals: (TiZrNbNi)1-xCux and (TiZrNbCu)1-xCox in a broad composition range of 0<x<0.5 as well as Ti0.30Zr0.15Nb0.15Cu0.2Ni0.2, Ti0.15Zr0.30Nb0.15Cu0.2Ni0.2 and Ti0.15Zr0.15Nb0.30Cu0.2Ni0.2. All samples showed high resistivity at room temperature, 140-240 μΩ cm, and the superconducting transition temperatures decreased with increasing late transition metal content, similar to binary amorphous and crystalline high-entropy TE-TL alloys. The Hall coefficient RH was temperature-independent and positive for all samples (except for (TiZrNbCu)0.57Co0.43), in good agreement with binary TE-TL alloys. Finally, for the temperature dependence of resistivity, as far as the authors are aware, we present a new model with two conduction channels, one of them being variable range hopping, such as the parallel conduction mode in the temperature range 20-200 K, with the exponent p=1/2. We examine this in the context of variable range hopping in granular metals.

Electron Transport in Discontinuous Metal Thin Films

The structure and basic experimental electrical properties of vacuum evaporated discontinuous (island) metal thin films of discrete metal nanoparticles on insulating substrates are briefly reviewed. Then the widely accepted Neugebauer and Webb (N&W) electrostatically activated electron tunneling conduction model is covered (with enhancements) before the numerous discrepancies between this model and experimental observations are identified, e.g. minimal substrate bias effect, non-linear field distribution, anomalous AC effects, asymmetrical contact effects, and switching. A modified model, based on contact electron injection and extraction, and computer simulations are introduced which explain these discrepancies at a qualitative level. However, quantitative experimental verification of the model is not possible without stable, reproducible films of known structures. The paper concludes with a review of possible preparation techniques which could yield satisfactory samples, especially self-assembly of organically protected metal nanoparticles. One of these has already demonstrated electrostatically activated conduction.

Magnetotransport Properties of Ferromagnetic Nanoparticles in a Semiconductor Matrix Studied by Precise Size-Selective Cluster Ion Beam Deposition

The combination of magnetic and semiconducting properties in one material system has great potential for integration of emerging spintronics with conventional semiconductor technology. One standard route for the synthesis of magnetic semiconductors is doping of semiconductors with magnetic atoms. In many semiconductor–magnetic–dopant systems, the magnetic atoms form precipitates within the semiconducting matrix. An alternative and controlled way to realize such nanocomposite materials is the assembly by co-deposition of size-selected cluster ions and a semiconductor. Here we follow the latter approach to demonstrate that this fabrication route can be used to independently study the influence of cluster concentration and cluster size on magneto-transport properties. In this case we study Fe clusters composed of approximately 500 or 1000 atoms soft-landed into a thermally evaporated amorphous Ge matrix. The analysis of field and temperature dependent transport shows that tunneling processes affected by Coulomb blockade dominate at low temperatures. The nanocomposites show saturating tunneling magnetoresistance, additionally superimposed by at least one other effect not saturating upon the maximum applied field of 6 T. The nanocomposites’ resistivity and the observed tunneling magnetoresistance depend exponentially on the average distance between cluster surfaces. On the contrary, there is no notable influence of the cluster size on the tunneling magnetoresistance.

Surface Functionalization with Copper Tetraaminophthalocyanine Enables Efficient Charge Transport in Indium Tin Oxide Nanocrystal Thin Films

Macroscopic superlattices of tin-doped indium oxide (ITO) nanocrystals (NCs) are prepared by self-assembly at the air/liquid interface followed by simultaneous ligand exchange with the organic semiconductor copper 4,4',4″,4‴-tetraaminophthalocyanine (Cu4APc). By using X-ray photoelectron spectroscopy (XPS), grazing-incidence small-angle X-ray scattering (GISAXS), and ultraviolet-visible-near-infrared (UV-vis-NIR) spectroscopy, we demonstrate that the semiconductor molecules largely replace the native surfactant from the ITO NC surface and act as cross-linkers between neighboring particles. Transport measurements reveal an increase in electrical conductance by 9 orders of magnitude, suggesting that Cu4APc provides efficient electronic coupling for neighboring ITO NCs. This material provides the opportunity to study charge and spin transport through phthalocyanine monolayers.

Structural, electron transportation and magnetic behavior transition of metastable FeAlO granular films

Metal-insulator granular film is technologically important for microwave applications. It has been challenging to obtain simultaneous high electrical resistivity and large saturation magnetization due to the balance of insulating non-magnetic and metallic magnetic components. FeAlO granular films satisfying both requirements have been prepared by pulsed laser deposition. The as-deposited film exhibits a high resistivity of 3700 μΩ∙cm with a negative temperature coefficient despite that Fe content (0.77) exceeds the percolation threshold. This originates from its unique microstructure containing amorphous Fe nanoparticles embedded in Al₂O₃ network. By optimizing the annealing conditions, superior electromagnetic properties with enhanced saturation magnetization (>1.05 T), high resistivity (>1200 μΩ∙cm) and broadened Δf (>3.0 GHz) are obtained. Phase separation with Al₂O₃ aggregating as inclusions in crystallized Fe(Al) matrix is observed after annealing at 673 K, resulting in a metallic-like resistivity. We provide a feasible way to achieve both high resistivity and large saturation magnetization for the FeAlO films with dominating metallic component and show that the microstructure can be tuned for desirable performance.

Large-scale mesoscopic transport in nanostructured graphene

Through exponential sample-size scaling of conductance, we demonstrate strong electron localization in three sets of nanostructured antidot graphene samples with localization lengths of 1.1, 2, and 3.4 μm. The large-scale mesoscopic transport is manifest as a parallel conduction channel to 2D variable range hopping, with a Coulomb quasigap around the Fermi level. The opening of the correlation quasigap, observable below 25 K through the temperature dependence of conductance, makes possible the exponential suppression of inelastic electron-electron scatterings and thereby leads to an observed dephasing length of 10 μm.

Universal conductance correction in a tunable strongly coupled nanogranular metal

We present temperature-dependent conductivity data obtained on a sample set of nanogranular Pt-C with finely tuned intergrain tunnel coupling strength g. For samples in the strong-coupling regime g > g(C), characterized by a finite conductivity for T→0, we find a logarithmic behavior at elevated temperatures and a crossover to a √T behavior at low temperatures over a wide range of coupling strengths g(C) ≈ 0.25 < g ≤ 3. The experimental observation for g > 1 is in very good agreement with recent theoretical findings on ordered granular metals in three spatial dimensions. The results indicate a validity of the predicted universal conductivity behavior that goes beyond the immediate range of the approach used in the theoretical derivation.

Electronic transport in conducting polymer nanowire array devices

We report on the temperature dependent conductivity and current-voltage (I-V) properties of novel polyaniline nanowire array devices. Below 60 K, I-V measurements show a transition to non-linear behaviour, leading to the onset at 30 K of a threshold voltage, for potentials below which little current flows. By considering an intrinsic morphology of small conducting regions separated by tunnel junctions, we show that charging of the conducting regions leads to Coulomb blockade effects that can account for this behaviour.

Low-temperature thermoelectric power factor enhancement by controlling nanoparticle size distribution

Coherent potential approximation is used to study the effect of adding doped spherical nanoparticles inside a host matrix on the thermoelectric properties. This takes into account electron multiple scatterings that are important in samples with relatively high volume fraction of nanoparticles (>1%). We show that with large fraction of uniform small size nanoparticles (∼1 nm), the power factor can be enhanced significantly. The improvement could be large (up to 450% for GaAs) especially at low temperatures when the mobility is limited by impurity or nanoparticle scattering. The advantage of doping via embedded nanoparticles compared to the conventional shallow impurities is quantified. At the optimum thermoelectric power factor, the electrical conductivity of the nanoparticle-doped material is larger than that of impurity-doped one at the studied temperature range (50-500 K) whereas the Seebeck coefficient of the nanoparticle doped material is enhanced only at low temperatures (∼50 K).

Magnetoresistance and microstructure of magnetite nanocrystals dispersed in indium-tin oxide thin films

Epitaxial indium-tin oxide (ITO) thin films were fabricated on a yttria-stabilized zirconia (YSZ) substrate by pulsed-laser deposition using magnetite (Fe(3)O(4)) nanoparticle dispersed ITO powders as a target. Magnetoresistance of the film at a field of 1 T was 39% at 45 K, and it stayed at 3% above 225 K. The film demonstrated cooling hysteresis in the temperature dependence of direct-current magnetization. Transmission electron microscopy revealed that phase-separated Fe(3)O(4) nanocrystals with widths of approximately 40-150 nm and heights of approximately 10-25 nm precipitated and grew epitaxially on the substrate in the film. Both the Fe(3)O(4)(111) and ITO(001) planes were parallel to the YSZ(001) plane. The Fe(3)O(4)(11-2) and -(1-10) planes were parallel to the ITO(100) and -(010) planes, respectively, and the planes connected smoothly at the grain boundary. The contour map of the electron density for the Fe(3)O(4)(111) plane by the first-principles electronic structure computation was similar to that for the ITO(001) plane. The [111]-oriented Fe(3)O(4) nanocrystals played the role of spin aligner for charge carriers of the epitaxial ITO film.