A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

Design and Simulation Investigation of Si3N4 Photonics Circuits for Wideband On-Chip Optical Gas Sensing around 2 µm Optical Wavelength

We theoretically explore the potential of Si₃N₄ on SiO₂ waveguide platform toward a wideband spectroscopic detection around the optical wavelength of 2 μm. The design of Si₃N₄ on SiO₂ waveguide architectures consisting of a Si₃N₄ slot waveguide for a wideband on-chip spectroscopic sensing around 2 μm, and a Si₃N₄ multi-mode interferometer (MMI)-based coupler for light coupling from classical strip waveguide into the identified Si₃N₄ slot waveguides over a wide spectral range are investigated. We found that a Si₃N₄ on SiO₂ slot waveguide structure can be designed for using as optical interaction part over a spectral range of interest, and the MMI structure can be used to enable broadband optical coupling from a strip to the slot waveguide for wideband multi-gas on-chip spectroscopic sensing. Reasons for the operating spectral range of the system are discussed.

Low-power and high-speed 2 × 2 thermo-optic MMI-MZI switch with suspended phase arms and heater-on-slab structure

We propose a ${2} \times {2}$ thermo-optic switch with high switching performance. The switch is based on multimode interferometer (MMI) couplers and a Mach-Zehnder interferometer (MZI) structure, where the phase arms are designed as laterally supported suspended ridge waveguides (LSSRWs) with a metallic heater placed on the slab. It is experimentally demonstrated that this switch has a power consumption of 1.07 mW, a thermal time constant ${\sim}{4.7}\;\unicode{x00B5} {\rm s}$, an extinction ratio ${\sim}{30}\;{\rm dB}$, and an insertion loss ${\sim}{0.5}\;{\rm dB}$. Particularly, the corresponding figure of merit (FOM) has been improved by 1 order magnitude compared with general thermo-optic switches. This ${2} \times {2}$ thermo-optic MMI-MZI switch may find potential application for network reconfiguration and on-chip optical information processing.

Superconducting nanowire single-photon detectors integrated with tantalum pentoxide waveguides

Photonic integrated circuits hold great potential for realizing quantum technology. Efficient single-photon detectors are an essential constituent of any such quantum photonic implementation. In this regard waveguide-integrated superconducting nanowire single-photon detectors are an ideal match for achieving advanced photon counting capabilities in photonic integrated circuits. However, currently considered material systems do not readily satisfy the demands of next generation nanophotonic quantum technology platforms with integrated single-photon detectors, in terms of refractive-index contrast, band gap, optical nonlinearity, thermo-optic stability and fast single-photon counting with high signal-to-noise ratio. Here we show that such comprehensive functionality can be realized by integrating niobium titanium nitride superconducting nanowire single-photon detectors with tantalum pentoxide waveguides. We demonstrate state-of-the-art detector performance in this novel material system, including devices showing 75% on-chip detection efficiency at tens of dark counts per second, detector decay times below 1 ns and sub-30 ps timing accuracy for telecommunication wavelengths photons at 1550 nm. Notably, we realize saturation of the internal detection efficiency over a previously unattained bias current range for waveguide-integrated niobium titanium nitride superconducting nanowire single-photon detectors. Our work enables the full set of high-performance single-photon detection capabilities on the emerging tantalum pentoxide-on-insulator platform for future applications in integrated quantum photonics.

Tantalum pentoxide nanophotonic circuits for integrated quantum technology

Nanophotonics holds great promise for integrated quantum technologies, but realizing all functionalities for processing quantum states of light in optical waveguides poses an outstanding challenge. Here we show that tantalum pentoxide-on-insulator offers significant advantages for such purpose and experimentally demonstrate crucial photonic integrated circuit components. Exploiting advanced nanophotonic design and state-of-the-art nanofabrication processes, we realize low-loss waveguiding with 1 dB/cm propagation loss, efficient optical fiber-chip interfaces with more than 100 nm bandwidth, micro-ring resonators with quality factors of 357,200 and tunable directional couplers. We further achieve active functionality with nano-electromechanical phase-shifters. Our work enables reconfigurable photonic circuit configurations in the Ta₂O₅ material system with highly favorable optical properties for integrated quantum photonics.

Low loss CMOS-compatible silicon nitride photonics utilizing reactive sputtered thin films

Low temperature deposition of low loss silicon nitride (SiN) thin-films is very attractive as it opens opportunities for realization of multi-layer photonic chips and hybrid integration of optical waveguides with temperature sensitive platforms such as processed CMOS silicon electronics or lithium niobate on insulator. So far, the most common low-temperature deposition technique for SiN is plasma enhanced chemical vapor deposition (PECVD), however such SiN thin-films can suffer from significant losses at C-band wavelengths due to unwanted hydrogen bonds. In this contribution we present a back end of line (< 400°C), low loss SiN platform based on reactive sputtering for telecommunication applications. Waveguide losses of 0.8 dB/cm at 1550 nm and as low as 0.6 dB/cm at 1580 nm have been achieved for moderate confined waveguides which appear to be limited by patterning rather than material. These findings show that reactive sputtered SiN thin-films can have lower optical losses compared to PECVD SiN thin-films, and thus show promise for future hybrid integration platforms for applications such as high Q resonators, optical filters and delay lines for optical signal processing.

Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

We report on the theoretical investigation of using an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si3N4 and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si3N4-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint.

Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.