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Gaggio B, Jan A, Muller M, Salonikidou B, Bakhit B, Hellenbrand M, Di Martino G, Yildiz B, MacManus-Driscoll JL. Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:5764-5774. [PMID: 38883429 PMCID: PMC11170940 DOI: 10.1021/acs.chemmater.4c00965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/01/2024] [Revised: 05/24/2024] [Accepted: 05/24/2024] [Indexed: 06/18/2024]
Abstract
A double layer 2-terminal device is employed to show Na-controlled interfacial resistive switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible NaNbO3 and Nb2O5, which allows the reversible uptake of Na+ in the Nb2O5 layer. We demonstrate voltage-controlled interfacial barrier tuning via Na+ transfer, enabling conductivity modulation and spike-amplitude- and spike-timing-dependent plasticity. The neuromorphic behavior controlled by Na+ ion dynamics in biocompatible materials shows potential for future low-power sensing electronics and smart wearables with local processing.
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Affiliation(s)
- Benedetta Gaggio
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Atif Jan
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Moritz Muller
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Barbara Salonikidou
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Babak Bakhit
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
- Electrical Engineering Division, Department of Engineering, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0FA, U.K
- Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83, Sweden
| | - Markus Hellenbrand
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Giuliana Di Martino
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
| | - Bilge Yildiz
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
| | - Judith L MacManus-Driscoll
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K
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Guo J, Liu L, Wang J, Zhao X, Zhang Y, Yan Y. A Diffusive Artificial Synapse Based on Charged Metal Nanoparticles. NANO LETTERS 2024; 24:1951-1958. [PMID: 38315061 DOI: 10.1021/acs.nanolett.3c04224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
We show that a diffusive memristor with analogue switching characteristics can be achieved in a layer of gold nanoparticles (AuNPs) functionalized with charged self-assembled monolayers (deprotonated 11-mercaptoundecanoic acid). The nanoparticle core and the anchored stationary charges are jammed within the layer while the mobile counterions [N(CH3)4+] can respond to the electric field and spontaneously diffuse back to the initial positions upon removal of the field. This metal nanoparticle device is set-step free, energy consumption efficient, mechanically flexible, and analogous to bio-Ca2+ dynamics and has tunable conductance modulation capabilities at the counterion concentrations. The gradual resistive switching behavior enables us to implement several important synaptic functions such as potentiation/depression, spike voltage-dependent plasticity, spike duration-dependent plasticity, spike frequency-dependent plasticity, and paired-pulse facilitation. Finally, on the basis of the paired-pulse facilitation characteristics, the metal nanoparticle diffusive artificial synapse is used for edge extraction with exhibits excellent performance.
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Affiliation(s)
- Jiahui Guo
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Mesoscience and Engineering (State Key Laboratory of Multi-phase Complex Systems), Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingyu Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xing Zhao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Yuchun Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Yong Yan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- School of Chemistry and Biological Engineering, University of Science and Technology Beijing, Beijing 100083, China
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Zhou Y, Han ST. Foreword to the focus issue: materials and technologies for memristors and neuromorphic devices. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2263265. [PMID: 37854122 PMCID: PMC10580789 DOI: 10.1080/14686996.2023.2263265] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/20/2023]
Affiliation(s)
- Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China
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